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onsemi 2SD1803T-TL-H

Part No.:
2SD1803T-TL-H
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
Aetrix2SD1803T-TL-H.pdf
Description:
TRANS NPN 50V 5A TP-FA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:700

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Product details

Overview

2SD1803T-TL-H from onsemi is an NPN bipolar power transistor in TP-FA (TO-252) package, rated for 50 V VCEO, 5 A IC, and low 220–400 mV VCE(sat) at IC = 3 A / IB = 0.15 A, optimized for high-current switching in relay drivers and DC-DC converters.

For engineers reviewing the 2SD1803T-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 3 A, fT ≥ 130 MHz, hFE range (70–400), TO-252 thermal capability (20 W at TC = 25°C), and Pb-free/Halogen-free compliance per ordering code.

Technical Context

This device operates as a single NPN silicon bipolar junction transistor with complementary PNP counterpart 2SB1203. It supports high-speed switching via fast ton = 50 ns, tstg = 500 ns, and tf = 20 ns under specified test conditions, and delivers linear hFE across IC = 0.5 A to 4 A.

Designed for DC bias and pulse operation up to ICP = 8 A, it features low output capacitance (Cob = 40 pF at VCB = −10 V), robust breakdown ratings (V(BR)CEO = −50 V, V(BR)CBO = −60 V), and operates reliably from −55°C to +150°C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - Maximum safe collector-emitter voltage before avalanche under open-base condition
IC5 A - Continuous collector current rating at TA = 25°C, defining steady-state power switching capacity
VCE(sat)220–400 mV - Confirmed saturation voltage at IC = 3 A / IB = 0.15 A, directly impacting conduction loss in switch-mode designs
fT130–180 MHz - Gain-bandwidth product at VCE = −5 V / IC = −1 A, enabling high-frequency switching control
hFE70–400 - DC current gain range at VCE = −2 V, supporting stable base drive design across production lots
PC (TC = 25°C)20 W - Maximum power dissipation with case temperature held at 25°C, indicating heatsink-dependent thermal headroom
Cob40 pF - Output capacitance at VCB = −10 V / f = 1 MHz, influencing switching transition speed and EMI behavior

Pinout & Package

2SD1803T-TL-H uses the TP-FA package (JEDEC TO-252, JEITA SC-63), a surface-mount, 4-terminal power plastic package with dual collector leads for enhanced current handling and thermal spreading.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal for forward-biased injection; requires IB ≈ IC/20 for saturation in switching applications
2CollectorMain high-current output node; electrically tied to pin 4; connected to heatsink pad for thermal management
3EmiterCurrent return path; common reference for load-side switching; must be low-inductance layout for fast turn-off
4CollectorSecond collector terminal, paralleled internally with pin 2 to reduce package inductance and improve current sharing

Key Features

FeatureDesign Value
Low VCE(sat)220–400 mV at 3 A enables <1.2 W conduction loss in 12 V relay driver stage
High fT≥130 MHz supports clean square-wave switching up to ~10 MHz with controlled edge rates
Linear hFEStable gain vs. IC ensures predictable base drive across 0.5–4 A load range without gain collapse
Fast switching50 ns turn-on, 500 ns storage, and 20 ns fall time enable efficient operation in 100 kHz–1 MHz converters
TP-FA packageTO-252 footprint with dual collector pins improves thermal resistance by ~15% vs. standard TO-252 and reduces bond wire inductance

Applications

Relay DriversDC-DC Converters

Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules requiring >2 A coil current.

IC Role / Device Role / Timing Role: NPN power switch controlling relay coil current path with fast turn-off to suppress back-EMF-induced contact arcing.

Use Value: Low 220–400 mV VCE(sat) minimizes power loss and self-heating during sustained coil energization.

Use Scenario: High-side or low-side switching in 50–200 kHz buck/boost converter stages delivering up to 5 A output.

IC Role / Device Role / Timing Role: Main power switch managing energy transfer between inductor and output capacitor with precise duty-cycle control.

Use Value: 130–180 MHz fT and 20 ns fall time support clean PWM edges, reducing switching losses and EMI generation.

InvertersMotor Control

Use Scenario: Half-bridge output stage in 24 V battery-powered inverters converting DC to 50/60 Hz AC for small appliances.

IC Role / Device Role / Timing Role: Complementary NPN switch paired with 2SB1203 in push-pull configuration to synthesize AC waveform.

Use Value: Dual collector terminals (pins 2 & 4) lower effective package inductance, improving cross-conduction immunity during dead-time transitions.

Use Scenario: Gate driving or direct current control in brushed DC motor H-bridge circuits for robotics and power tools.

IC Role / Device Role / Timing Role: High-current switching element regulating motor winding current direction and magnitude via PWM modulation.

Use Value: Verified 8 A pulse rating (ICP) supports short-duration stall-current surges without secondary breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD127GVCEO = 100 V, IC = 5 A, VCE(sat) = 1.5 V @ 3 A - higher saturation voltage, wider SOAPreferred where higher breakdown margin is required over low-loss prioritySelect MJD127G when operating near 60–80 V bus rails or needing extended safe operating area at elevated TJ
SSP15N03DHN-channel MOSFET (30 V, 15 A, RDS(on) = 12 mΩ) - voltage-controlled, no base current, faster switchingUsed where gate drive simplicity, zero gate current, and sub-10 ns transitions are criticalChoose SSP15N03DH for new designs prioritizing efficiency >100 kHz or eliminating base resistor networks

Compared with MJD127G and SSP15N03DH, the 2SD1803T-TL-H offers lowest conduction loss in 12–24 V, 3–5 A switching applications due to its 220–400 mV VCE(sat), while retaining BJT simplicity for analog-digital hybrid control and cost-sensitive production volumes.

Availability

2SD1803T-TL-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control circuits requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for 2SD1803T-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2SD1803T-TL-H belongs to onsemi's general-purpose bipolar power transistor family, engineered for high-current, medium-voltage switching in cost-sensitive industrial and consumer power systems.

FAQ

What is the package type and lead count of the 2SD1803T-TL-H?

The 2SD1803T-TL-H uses the TP-FA package, which corresponds to JEDEC TO-252 and JEITA SC-63. It has four terminals: Base (pin 1), Collector (pins 2 and 4), and Emitter (pin 3). The "TL" in the part number denotes tape-and-reel packaging with 700 pcs./reel.

Does the 2SD1803T-TL-H meet RoHS and halogen-free requirements?

Yes, the 2SD1803T-TL-H is both Pb-free and halogen-free, as indicated by the "-H" suffix in its full ordering code. This complies with JESD204B and IEC 61249-2-21 standards for environmentally conscious manufacturing.

What is the maximum continuous collector current rating for the 2SD1803T-TL-H?

The 2SD1803T-TL-H is rated for a continuous collector current (IC) of 5 A at ambient temperature (TA = 25°C). At case temperature TC = 25°C, it supports up to 20 W dissipation, enabling higher current operation with proper heatsinking.

How does the 2SD1803T-TL-H compare to its PNP counterpart 2SB1203T-TL-H?

The 2SD1803T-TL-H (NPN) and 2SB1203T-TL-H (PNP) share identical TP-FA packaging, voltage/current ratings (−50 V / 5 A), and complementary electrical characteristics. They are designed as matched pairs for push-pull, H-bridge, and complementary amplifier topologies requiring symmetrical switching behavior.

What are the key thermal specifications for reliable operation of the 2SD1803T-TL-H?

The 2SD1803T-TL-H has a maximum junction temperature (Tj) of 150°C and storage temperature range of −55°C to +150°C. Its thermal resistance θJC is not explicitly published, but the TP-FA package's exposed collector pad enables direct PCB copper pour attachment for effective heat transfer to internal layers or external heatsinks.

2SD1803T-TL-H Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 150mA, 3A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Power - Max:
1 W
Frequency - Transition:
180MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TP-FA

2SD1803T-TL-H FAQ

1.How can I place an order for 2SD1803T-TL-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1803T-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1803T-TL-H reliable?

The price and inventory of 2SD1803T-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1803T-TL-H is usually 5 days.

3.What payment methods are accepted for 2SD1803T-TL-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1803T-TL-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1803T-TL-H?

2SD1803T-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1803T-TL-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1803T-TL-H?

For technical support, including 2SD1803T-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1803T-TL-H requirements.

6.How does Aetrix verify that 2SD1803T-TL-H is sourced from the original manufacturer or authorized distributors?

All 2SD1803T-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1803T-TL-H meets industry standards.

7.What is the process for return or replacement of 2SD1803T-TL-H?

All 2SD1803T-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1803T-TL-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1803T-TL-H part is unused and in its original packaging.

Return procedure for 2SD1803T-TL-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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