onsemi 2SD1803T-TL-H
- Part No.:
- 2SD1803T-TL-H
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SD1803T-TL-H.pdf
- Description:
- TRANS NPN 50V 5A TP-FA
- Quantity:
- Payment:

- Shipping:

Inventory:700
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SD1803T-TL-H from onsemi is an NPN bipolar power transistor in TP-FA (TO-252) package, rated for 50 V VCEO, 5 A IC, and low 220–400 mV VCE(sat) at IC = 3 A / IB = 0.15 A, optimized for high-current switching in relay drivers and DC-DC converters.
For engineers reviewing the 2SD1803T-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 3 A, fT ≥ 130 MHz, hFE range (70–400), TO-252 thermal capability (20 W at TC = 25°C), and Pb-free/Halogen-free compliance per ordering code.
Technical Context
This device operates as a single NPN silicon bipolar junction transistor with complementary PNP counterpart 2SB1203. It supports high-speed switching via fast ton = 50 ns, tstg = 500 ns, and tf = 20 ns under specified test conditions, and delivers linear hFE across IC = 0.5 A to 4 A.
Designed for DC bias and pulse operation up to ICP = 8 A, it features low output capacitance (Cob = 40 pF at VCB = −10 V), robust breakdown ratings (V(BR)CEO = −50 V, V(BR)CBO = −60 V), and operates reliably from −55°C to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before avalanche under open-base condition |
| IC | 5 A - Continuous collector current rating at TA = 25°C, defining steady-state power switching capacity |
| VCE(sat) | 220–400 mV - Confirmed saturation voltage at IC = 3 A / IB = 0.15 A, directly impacting conduction loss in switch-mode designs |
| fT | 130–180 MHz - Gain-bandwidth product at VCE = −5 V / IC = −1 A, enabling high-frequency switching control |
| hFE | 70–400 - DC current gain range at VCE = −2 V, supporting stable base drive design across production lots |
| PC (TC = 25°C) | 20 W - Maximum power dissipation with case temperature held at 25°C, indicating heatsink-dependent thermal headroom |
| Cob | 40 pF - Output capacitance at VCB = −10 V / f = 1 MHz, influencing switching transition speed and EMI behavior |
Pinout & Package
2SD1803T-TL-H uses the TP-FA package (JEDEC TO-252, JEITA SC-63), a surface-mount, 4-terminal power plastic package with dual collector leads for enhanced current handling and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased injection; requires IB ≈ IC/20 for saturation in switching applications |
| 2 | Collector | Main high-current output node; electrically tied to pin 4; connected to heatsink pad for thermal management |
| 3 | Emiter | Current return path; common reference for load-side switching; must be low-inductance layout for fast turn-off |
| 4 | Collector | Second collector terminal, paralleled internally with pin 2 to reduce package inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 220–400 mV at 3 A enables <1.2 W conduction loss in 12 V relay driver stage |
| High fT | ≥130 MHz supports clean square-wave switching up to ~10 MHz with controlled edge rates |
| Linear hFE | Stable gain vs. IC ensures predictable base drive across 0.5–4 A load range without gain collapse |
| Fast switching | 50 ns turn-on, 500 ns storage, and 20 ns fall time enable efficient operation in 100 kHz–1 MHz converters |
| TP-FA package | TO-252 footprint with dual collector pins improves thermal resistance by ~15% vs. standard TO-252 and reduces bond wire inductance |
Applications
| Relay Drivers | DC-DC Converters |
|---|---|
Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules requiring >2 A coil current. IC Role / Device Role / Timing Role: NPN power switch controlling relay coil current path with fast turn-off to suppress back-EMF-induced contact arcing. Use Value: Low 220–400 mV VCE(sat) minimizes power loss and self-heating during sustained coil energization. | Use Scenario: High-side or low-side switching in 50–200 kHz buck/boost converter stages delivering up to 5 A output. IC Role / Device Role / Timing Role: Main power switch managing energy transfer between inductor and output capacitor with precise duty-cycle control. Use Value: 130–180 MHz fT and 20 ns fall time support clean PWM edges, reducing switching losses and EMI generation. |
| Inverters | Motor Control |
Use Scenario: Half-bridge output stage in 24 V battery-powered inverters converting DC to 50/60 Hz AC for small appliances. IC Role / Device Role / Timing Role: Complementary NPN switch paired with 2SB1203 in push-pull configuration to synthesize AC waveform. Use Value: Dual collector terminals (pins 2 & 4) lower effective package inductance, improving cross-conduction immunity during dead-time transitions. | Use Scenario: Gate driving or direct current control in brushed DC motor H-bridge circuits for robotics and power tools. IC Role / Device Role / Timing Role: High-current switching element regulating motor winding current direction and magnitude via PWM modulation. Use Value: Verified 8 A pulse rating (ICP) supports short-duration stall-current surges without secondary breakdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | VCEO = 100 V, IC = 5 A, VCE(sat) = 1.5 V @ 3 A - higher saturation voltage, wider SOA | Preferred where higher breakdown margin is required over low-loss priority | Select MJD127G when operating near 60–80 V bus rails or needing extended safe operating area at elevated TJ |
| SSP15N03DH | N-channel MOSFET (30 V, 15 A, RDS(on) = 12 mΩ) - voltage-controlled, no base current, faster switching | Used where gate drive simplicity, zero gate current, and sub-10 ns transitions are critical | Choose SSP15N03DH for new designs prioritizing efficiency >100 kHz or eliminating base resistor networks |
Compared with MJD127G and SSP15N03DH, the 2SD1803T-TL-H offers lowest conduction loss in 12–24 V, 3–5 A switching applications due to its 220–400 mV VCE(sat), while retaining BJT simplicity for analog-digital hybrid control and cost-sensitive production volumes.
Availability
2SD1803T-TL-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control circuits requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.
Supply support for 2SD1803T-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.
The 2SD1803T-TL-H belongs to onsemi's general-purpose bipolar power transistor family, engineered for high-current, medium-voltage switching in cost-sensitive industrial and consumer power systems.
FAQ
What is the package type and lead count of the 2SD1803T-TL-H?
The 2SD1803T-TL-H uses the TP-FA package, which corresponds to JEDEC TO-252 and JEITA SC-63. It has four terminals: Base (pin 1), Collector (pins 2 and 4), and Emitter (pin 3). The "TL" in the part number denotes tape-and-reel packaging with 700 pcs./reel.
Does the 2SD1803T-TL-H meet RoHS and halogen-free requirements?
Yes, the 2SD1803T-TL-H is both Pb-free and halogen-free, as indicated by the "-H" suffix in its full ordering code. This complies with JESD204B and IEC 61249-2-21 standards for environmentally conscious manufacturing.
What is the maximum continuous collector current rating for the 2SD1803T-TL-H?
The 2SD1803T-TL-H is rated for a continuous collector current (IC) of 5 A at ambient temperature (TA = 25°C). At case temperature TC = 25°C, it supports up to 20 W dissipation, enabling higher current operation with proper heatsinking.
How does the 2SD1803T-TL-H compare to its PNP counterpart 2SB1203T-TL-H?
The 2SD1803T-TL-H (NPN) and 2SB1203T-TL-H (PNP) share identical TP-FA packaging, voltage/current ratings (−50 V / 5 A), and complementary electrical characteristics. They are designed as matched pairs for push-pull, H-bridge, and complementary amplifier topologies requiring symmetrical switching behavior.
What are the key thermal specifications for reliable operation of the 2SD1803T-TL-H?
The 2SD1803T-TL-H has a maximum junction temperature (Tj) of 150°C and storage temperature range of −55°C to +150°C. Its thermal resistance θJC is not explicitly published, but the TP-FA package's exposed collector pad enables direct PCB copper pour attachment for effective heat transfer to internal layers or external heatsinks.
2SD1803T-TL-H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 180MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TP-FA
2SD1803T-TL-H FAQ
1.How can I place an order for 2SD1803T-TL-H through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SD1803T-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SD1803T-TL-H reliable?
The price and inventory of 2SD1803T-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1803T-TL-H is usually 5 days.
3.What payment methods are accepted for 2SD1803T-TL-H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1803T-TL-H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SD1803T-TL-H?
2SD1803T-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SD1803T-TL-H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SD1803T-TL-H?
For technical support, including 2SD1803T-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1803T-TL-H requirements.
6.How does Aetrix verify that 2SD1803T-TL-H is sourced from the original manufacturer or authorized distributors?
All 2SD1803T-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1803T-TL-H meets industry standards.
7.What is the process for return or replacement of 2SD1803T-TL-H?
All 2SD1803T-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1803T-TL-H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SD1803T-TL-H part is unused and in its original packaging.
Return procedure for 2SD1803T-TL-H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SD1803T-TL-H Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

