Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SD1805F-E

Part No.:
2SD1805F-E
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
Aetrix2SD1805F-E.pdf
Description:
TRANS NPN 20V 5A TP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,655

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SD1805F-E from onsemi is an NPN bipolar junction transistor (BJT) designed for medium-power switching applications, featuring VCEO = 20 V, IC = 5 A continuous, VCE(sat) = 220–500 mV at IC = 3 A / IB = 60 mA, and fT = 120 MHz. It serves as a high-current, low-saturation switch in lamp drivers, relay drivers, and strobe circuits.

For engineers reviewing the 2SD1805F-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 3 A, TO-251 (TP) package thermal dissipation (15 W at Tc = 25°C), hFE rank F (160–320 at IC = 500 mA), and fast switching (ton = 30 ns, tf = 40 ns).

Technical Context

The 2SD1805F-E is a silicon NPN planar transistor optimized for linear and switching operation in DC-to-100 kHz power control. Its low VCE(sat) and high IC rating support efficient current switching in compact layouts, while its 120 MHz fT enables stable gain in moderate-frequency amplification stages.

It operates within a junction temperature range of –55°C to +150°C and supports pulsed collector current up to 8 A. The device uses a single-die TP (TO-251) leadframe package with four terminals-two collectors electrically tied-enabling high-current routing without external paralleling.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO20 V - Maximum safe collector-emitter voltage under open-base conditions; defines upper limit for DC supply rails in relay/lamp driver designs.
IC (continuous)5 A - Continuous collector current capability at Tc = 25°C; supports direct drive of 24 V/5 A solenoids or LED arrays without heatsink derating.
VCE(sat)220–500 mV @ IC = 3 A, IB = 60 mA - Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switching.
fT120 MHz - Gain-bandwidth product enabling usable small-signal amplification up to ~10 MHz with adequate gain margin.
hFE (Rank F)160–320 @ VCE = 2 V, IC = 500 mA - Tight DC current gain bin ensures predictable base drive requirements in production designs.
ton/tf30 ns / 40 ns - Fast turn-on and fall times reduce switching losses in PWM-controlled loads operating up to 500 kHz.

Pinout & Package

Package: TP (TO-251, JEDEC SC-64), surface-mount, 4-terminal leadframe with dual collector leads (pins 2 and 4) internally connected. Thermal resistance θJC enables 15 W dissipation at case temperature 25°C.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl input node; requires ≥60 mA base drive for full saturation at 3 A collector current.
2CollectorMain high-current output path; electrically identical to pin 4; used for PCB layout symmetry or thermal relief routing.
3EmitterPower return node; must be low-impedance connection to ground/power plane to maintain VCE(sat) spec.
4CollectorSecond collector terminal; internally bonded to pin 2; provides redundant current path and improved thermal spreading.

Key Features

FeatureDesign Value
Low VCE(sat)220–500 mV at rated 3 A load reduces conduction loss to ≤1.5 W, easing thermal design in sealed enclosures.
Dual collector terminalsPins 2 and 4 are internally shorted, allowing flexible PCB routing and enhanced current sharing without external bus bars.
Fast switching30 ns turn-on and 40 ns fall time enable clean square-wave drive of inductive loads with minimal ringing or shoot-through risk.
Rank-coded hFERank F (160–320) ensures consistent base drive sizing across production lots, reducing calibration overhead in automated assembly.

Applications

Lamp DriverRelay Driver

Use Scenario: Driving 12–24 V incandescent or halogen lamps in automotive interior lighting or industrial status indicators.

IC Role / Device Role / Timing Role: High-current NPN switch controlling lamp current path between supply rail and ground.

Use Value: Low VCE(sat) limits lamp dimming due to voltage drop; dual collectors simplify high-current trace layout on 2-layer PCBs.

Use Scenario: Activating 12–24 V electromagnetic relays in PLC I/O modules or HVAC control panels.

IC Role / Device Role / Timing Role: Saturated-switch interface between microcontroller GPIO and relay coil.

Use Value: 5 A rating handles relay inrush currents (up to 3× steady-state); fast tf prevents contact chatter during deactivation.

Strobe Flash CircuitVoltage Regulator Pass Element

Use Scenario: Discharging capacitor banks through xenon flash tubes in camera or safety strobes.

IC Role / Device Role / Timing Role: High-pulse-current switch triggered by timing controller to initiate flash discharge.

Use Value: 8 A pulse rating (ICP) supports 100–200 μs flash pulses; low storage time (tstg = 300 ns) enables rapid retriggering.

Use Scenario: Series pass element in linear voltage regulators delivering up to 5 A at <20 V output.

IC Role / Device Role / Timing Role: Adjustable current-handling transistor controlled by error amplifier feedback loop.

Use Value: 15 W Tc-based dissipation allows 3–5 W continuous regulator output without forced air; VCEO = 20 V sets max input-output differential.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SD1760F-EVCEO = 25 V, IC = 3 A, VCE(sat) = 300–600 mV @ 2 A - lower current, higher VCEO.Suitable for 24 V systems requiring margin above 20 V; not recommended for >3 A loads.Select when system voltage exceeds 20 V but load current stays ≤3 A and board space is constrained.
MJD127GVCEO = 100 V, IC = 8 A, VCE(sat) = 1.2 V @ 4 A - higher voltage, higher saturation loss.Used in 48 V industrial controls; higher VCE(sat) increases conduction loss in 12–24 V apps.Choose only if 100 V breakdown is mandatory; otherwise, 2SD1805F-E offers superior efficiency below 25 V.

Compared with 2SD1760F-E and MJD127G, the 2SD1805F-E delivers optimal balance of low VCE(sat), 5 A current, and 20 V rating for cost-sensitive 12–24 V switching-making it preferred for lamp/relay/strobe designs where thermal headroom and conduction loss are critical.

Availability

2SD1805F-E is available at Aetrix Electronics and suitable for lamp drivers, relay drivers, and strobe flash circuits requiring stable component supply, RoHS-compliant packaging, and consistent hFE binning across production volumes.

Supply support for 2SD1805F-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and logic devices.

The 2SD1805F-E belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for high-reliability, medium-power switching in industrial controls, lighting, and power conversion systems.

FAQ

What is the maximum continuous collector current rating for the 2SD1805F-E?

The 2SD1805F-E has a maximum continuous collector current (IC) of 5 A at case temperature Tc = 25°C. This rating assumes proper thermal management via PCB copper pour or heatsinking. At ambient temperature (Ta = 25°C) with no heatsink, derating applies per the PC–Ta curve in the datasheet, limiting usable current to approximately 1.5 A.

Is the 2SD1805F-E pin-compatible with the 2SD1805G-E?

Yes, the 2SD1805F-E and 2SD1805G-E share identical TP (TO-251) package, pinout, and electrical structure. The only difference is hFE binning: Rank F specifies hFE = 160–320, while Rank G is 280–560 at IC = 500 mA. Both are drop-in replacements in layouts designed for the 2SD1805 series.

What does the "-E" suffix indicate in 2SD1805F-E?

The "-E" suffix in 2SD1805F-E denotes compliance with RoHS Directive 2011/65/EU and exemption 7a (lead in high-melting-temperature type solders). It confirms Pb-free terminations and halogen-free molding compound, verified per onsemi's EN2115C specification and shipping documentation.

Can the 2SD1805F-E be used in linear regulator applications?

Yes, the 2SD1805F-E is qualified for linear regulator use as a series pass transistor. Its VCEO = 20 V sets the maximum allowable input-output differential, and its 15 W Tc-based dissipation supports up to ~5 W continuous output power with appropriate heatsinking. Designers must verify thermal design using the provided θJC and junction temperature limits.

What is the purpose of the dual collector terminals (pins 2 and 4) on the 2SD1805F-E?

The dual collector terminals (pins 2 and 4) on the 2SD1805F-E are internally connected, providing redundant current paths and improved thermal spreading across the leadframe. This design reduces effective current density per bond wire and enhances reliability under pulsed loads, while also simplifying PCB layout by allowing symmetric trace routing or split-current distribution without external paralleling components.

2SD1805F-E Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 60mA, 3A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 500mA, 2V
Power - Max:
1 W
Frequency - Transition:
120MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TP

2SD1805F-E FAQ

1.How can I place an order for 2SD1805F-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1805F-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1805F-E reliable?

The price and inventory of 2SD1805F-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1805F-E is usually 5 days.

3.What payment methods are accepted for 2SD1805F-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1805F-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1805F-E?

2SD1805F-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1805F-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1805F-E?

For technical support, including 2SD1805F-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1805F-E requirements.

6.How does Aetrix verify that 2SD1805F-E is sourced from the original manufacturer or authorized distributors?

All 2SD1805F-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1805F-E meets industry standards.

7.What is the process for return or replacement of 2SD1805F-E?

All 2SD1805F-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1805F-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1805F-E part is unused and in its original packaging.

Return procedure for 2SD1805F-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SD1805F-E Tags

  • 2SD1805F-E
  • 2SD1805F-E PDF
  • 2SD1805F-E Datasheet
  • 2SD1805F-E Specifications
  • 2SD1805F-E Images
  • onsemi
  • onsemi 2SD1805F-E
  • Buy 2SD1805F-E
  • 2SD1805F-E Price
  • 2SD1805F-E Distributor
  • 2SD1805F-E Supplier
  • 2SD1805F-E Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER