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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1815S-E

Name: 2SD1815S-E
Brand: onsemi
SKU: 2SD1815S-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1815S-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SD1815S-E.pdf

Description:: TRANS NPN 100V 3A TP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1815S-E from onsemi is an NPN bipolar junction transistor designed for high-current switching in power control circuits, featuring V_CEO = 100 V, I_C = 3 A, V_CE(sat) = –150 mV (typ) at I_C = –1.5 A / I_B = –0.15 A, f_T = 180 MHz (typ), and housed in the TP (TO-251) surface-mount package. It serves as a robust switch in relay drivers and DC-DC converters.

For engineers reviewing the 2SD1815S-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified low saturation voltage, confirmed hFE linearity across 0.5–2 A, validated fast switching (t_on = 100 ns, t_f = 50 ns), JEDEC TO-251 footprint compatibility, and halogen-free compliance per ordering code "-H" variants.

Technical Context

The 2SD1815S-E operates as a single NPN silicon transistor with a common-emitter configuration optimized for linear and switching applications. Its design emphasizes low V_CE(sat) and high f_T, enabling efficient operation in high-speed inverters and pulse-width modulated loads.

It shares the same die and electrical characteristics as the 2SB1215S-E PNP counterpart in complementary pair configurations. The TP package supports thermal dissipation up to 20 W at T_c = 25°C and features a 4-pin leadframe (pins 1–4) with dual collector terminals for enhanced current handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Maximum allowable collector-to-emitter voltage before breakdown under open-base conditions; defines safe operating voltage headroom in 48 V and 100 V bus applications.
I_C	3 A - Continuous DC collector current rating; supports sustained load switching in industrial motor drivers and power supply output stages.
V_CE(sat)	–150 mV (typ) at I_C = –1.5 A / I_B = –0.15 A - Low saturation voltage minimizes conduction loss and self-heating during on-state operation.
f_T	180 MHz (typ) at V_CE = –10 V / I_C = –0.5 A - Enables reliable operation in high-frequency switching converters up to ~1–2 MHz with adequate gain margin.
hFE	140–400 - DC current gain range across two rank grades (S: 140–280; T: 200–400); ensures predictable base drive requirements in both linear amplification and saturated switching modes.
t_on/t_f	100 ns / 50 ns - Fast turn-on and fall times reduce switching losses and enable clean square-wave output in digital logic interface and PWM circuits.

Pinout & Package

Package: TP (JEDEC TO-251, SC-64), 4-pin surface-mount plastic package with dual collector leads for improved thermal and current handling. Mass: 0.315 g.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; requires 0.15 A base current to saturate at 1.5 A collector load, enabling direct microcontroller GPIO drive with appropriate current limiting.
2	Collector	Main high-side current path terminal; electrically identical to Pin 4; paralleling both collectors reduces effective lead resistance and improves thermal spreading.
3	Emitter	Reference and return path for collector current; connected to system ground or low-side shunt in common-emitter topology.
4	Collector	Second collector terminal; must be connected to same net as Pin 2 to achieve rated I_C and thermal performance per datasheet layout guidelines.

Key Features

Feature	Design Value
Low V_CE(sat)	–150 mV typical enables <150 mW conduction loss at 1.5 A, reducing heatsink requirements in space-constrained power modules.
High f_T	180 MHz typical supports stable small-signal amplification and fast edge integrity in gate-driving and signal-switching applications.
hFE linearity	Verified hFE consistency across I_C = 0.5 A to 2 A ensures predictable base drive scaling without gain collapse in analog control loops.
TP package footprint	TO-251 outline allows drop-in replacement of legacy through-hole transistors while supporting automated SMT assembly and higher board density.
Halogen-free option	2SD1815S-H variant meets IEC 61249-2-21 requirements, enabling compliance in environmentally regulated industrial and automotive end equipment.

Applications

Relay Drivers	DC-DC Converters
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules where fast de-energization and low coil power are critical. IC Role / Device Role / Timing Role: High-current NPN switch controlling relay coil current path with active pull-down via base resistor network. Use Value: 50 ns fall time ensures rapid relay release (<10 ms), while 150 mV V_CE(sat) limits coil heating to <225 mW at full load.	Use Scenario: High-side switch in non-isolated buck converter output stage delivering 5 V/2 A to FPGA core rails. IC Role / Device Role / Timing Role: Main power switch operating in hard-switched PWM mode at 500 kHz with synchronous rectification. Use Value: 180 MHz f_T maintains sufficient gain margin at switching frequency, and dual-collector layout sustains 2 A continuous output current with minimal thermal derating.
Motor Control H-Bridge Legs	Industrial Inverters
Use Scenario: Low-side switching element in 24 V brushed DC motor driver ICs used in warehouse automation conveyors. IC Role / Device Role / Timing Role: Ground-referenced switching transistor controlled by PWM controller with integrated dead-time management. Use Value: 100 ns turn-on time synchronizes cleanly with gate driver output, minimizing shoot-through risk; 3 A rating covers peak stall currents up to 2.5 A.	Use Scenario: Output stage switch in 100 V AC-input offline inverter for HVAC blower control in commercial building systems. IC Role / Device Role / Timing Role: Primary switching device in half-bridge topology handling 100 V DC bus and 1.2 A RMS load current. Use Value: 100 V V_CEO provides 2× safety margin over 48 V nominal bus; TO-251 package enables compact heatsinking on metal-core PCBs.

Relay Drivers

DC-DC Converters

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules where fast de-energization and low coil power are critical.

IC Role / Device Role / Timing Role: High-current NPN switch controlling relay coil current path with active pull-down via base resistor network.

Use Value: 50 ns fall time ensures rapid relay release (<10 ms), while 150 mV V_CE(sat) limits coil heating to <225 mW at full load.

Use Scenario: High-side switch in non-isolated buck converter output stage delivering 5 V/2 A to FPGA core rails.

IC Role / Device Role / Timing Role: Main power switch operating in hard-switched PWM mode at 500 kHz with synchronous rectification.

Use Value: 180 MHz f_T maintains sufficient gain margin at switching frequency, and dual-collector layout sustains 2 A continuous output current with minimal thermal derating.

Motor Control H-Bridge Legs

Industrial Inverters

Use Scenario: Low-side switching element in 24 V brushed DC motor driver ICs used in warehouse automation conveyors.

IC Role / Device Role / Timing Role: Ground-referenced switching transistor controlled by PWM controller with integrated dead-time management.

Use Value: 100 ns turn-on time synchronizes cleanly with gate driver output, minimizing shoot-through risk; 3 A rating covers peak stall currents up to 2.5 A.

Use Scenario: Output stage switch in 100 V AC-input offline inverter for HVAC blower control in commercial building systems.

IC Role / Device Role / Timing Role: Primary switching device in half-bridge topology handling 100 V DC bus and 1.2 A RMS load current.

Use Value: 100 V V_CEO provides 2× safety margin over 48 V nominal bus; TO-251 package enables compact heatsinking on metal-core PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD1815G	Same V_CEO (100 V), I_C (3 A), and TO-252 (DPAK) package; slightly higher V_CE(sat) (200 mV typ) and lower f_T (120 MHz).	Requires larger PCB footprint (TO-252 vs TO-251); less suitable for ultra-dense layouts but offers better thermal resistance in high-T_a environments.	Select MJD1815G when board-level thermal management prioritizes R_θJA over footprint size, and 200 mV V_CE(sat) remains within system loss budget.
2SD2656-E	Higher V_CEO (120 V), same I_C (3 A), TO-251 package; V_CE(sat) = 250 mV (typ), hFE = 100–320, no halogen-free variant listed.	Supports wider input voltage ranges (e.g., 72 V battery systems); lower gain and higher saturation voltage increase base drive and conduction loss.	Choose 2SD2656-E only when 120 V blocking capability is mandatory and the 100 mV higher V_CE(sat) can be accommodated in thermal design.

Compared with MJD1815G and 2SD2656-E, the 2SD1815S-E delivers the lowest V_CE(sat) and highest f_T in the TO-251 form factor, making it optimal for high-efficiency, high-density switching applications where speed and conduction loss are co-critical.

Availability

2SD1815S-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and industrial inverters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for 2SD1815S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2SD1815S-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for high-reliability switching and amplification in industrial power conversion, motor control, and interface circuitry.

FAQ

What is the maximum continuous collector current rating for the 2SD1815S-E?

The 2SD1815S-E has a maximum continuous collector current (I_C) rating of 3 A at T_c = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C case temperature per the datasheet's PC–Tc curve. At 100°C case temperature, the usable I_C drops to approximately 1.2 A. Always verify thermal design margins using the 2SD1815S-E's specified thermal resistance and actual board layout.

Does the 2SD1815S-E have a halogen-free version, and how is it identified?

Yes, the halogen-free version of the 2SD1815S-E is designated as 2SD1815S-H. Both variants share identical electrical specifications and TP package dimensions, but the "-H" suffix confirms compliance with IEC 61249-2-21 for halogen-free materials. The 2SD1815S-H is recommended for environmentally regulated applications such as industrial controls sold in the EU or Japan.

How many collector terminals does the 2SD1815S-E have, and why?

The 2SD1815S-E has two collector terminals (Pins 2 and 4), as confirmed by the official onsemi datasheet and TP package outline drawing. This dual-collector configuration lowers effective lead resistance and improves thermal conduction from the die to the PCB copper, supporting its 3 A continuous rating in the compact TO-251 footprint. Both pins must be connected to the same net.

What is the guaranteed hFE range for the 2SD1815S-E at I_C = 0.5 A?

The 2SD1815S-E is binned into two hFE ranks: "S" grade guarantees hFE = 140–280, and "T" grade guarantees hFE = 200–400, both measured at V_CE = –5 V and I_C = –0.5 A. The "S" suffix in 2SD1815S-E explicitly denotes the 140–280 hFE bin, ensuring predictable base drive requirements in production designs without need for post-manufacturing sorting.

Can the 2SD1815S-E be used in linear amplifier applications?

Yes, the 2SD1815S-E supports linear operation, evidenced by its specified hFE linearity across I_C = 0.5 A to 2 A and low V_CE(sat) behavior. However, its primary design focus is switching; for precision analog amplification, dedicated RF or audio transistors with tighter parameter distributions and lower noise are preferred. The 2SD1815S-E remains suitable for medium-fidelity pre-driver or error-amplifier stages where gain stability matters more than noise floor.

2SD1815S-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SD1815S-E FAQ

1.How can I place an order for 2SD1815S-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1815S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1815S-E reliable?

The price and inventory of 2SD1815S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1815S-E is usually 5 days.

3.What payment methods are accepted for 2SD1815S-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1815S-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1815S-E?

2SD1815S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1815S-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1815S-E?

For technical support, including 2SD1815S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1815S-E requirements.

6.How does Aetrix verify that 2SD1815S-E is sourced from the original manufacturer or authorized distributors?

All 2SD1815S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1815S-E meets industry standards.

7.What is the process for return or replacement of 2SD1815S-E?

All 2SD1815S-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1815S-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1815S-E part is unused and in its original packaging.

Return procedure for 2SD1815S-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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