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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1815S-H

Name: 2SD1815S-H
Brand: onsemi
SKU: 2SD1815S-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1815S-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SD1815S-H.pdf

Description:: TRANS NPN 100V 3A TP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1815S-H from onsemi is an NPN bipolar junction transistor designed for high-current switching in power control circuits, featuring V_CEO = 100 V, I_C = 3 A, V_CE(sat) = –150 mV (typ) at I_C = –1.5 A / I_B = –0.15 A, f_T = 180 MHz (typ), and housed in the TP (TO-251) package with 4-pin single-lead configuration. It is used in relay drivers, DC-DC converters, and high-speed inverters.

For engineers reviewing the 2SD1815S-H datasheet, pinout, applications, or equivalent options, key selection criteria include its low saturation voltage, high f_T, fast switching times (t_on = 100 ns, t_f = 50 ns), halogen-free compliance, and TP package thermal performance under T_c = 25°C conditions.

Technical Context

The 2SD1815S-H operates as a general-purpose NPN switching transistor with a maximum collector-emitter breakdown voltage of 100 V and continuous collector current rating of 3 A. Its gain-bandwidth product of 180 MHz supports high-frequency switching up to several tens of MHz in hard-switched topologies.

It exhibits excellent h_FE linearity across I_C = 0.5 A to 2 A, with h_FE1 = 140–400 at V_CE = –5 V / I_C = –0.5 A and h_FE2 = 40 min at I_C = –2 A. Saturation characteristics are optimized for low-loss operation, with V_CE(sat) ≤ 400 mV (max) at I_C = –1.5 A / I_B = –0.15 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Maximum safe collector-emitter voltage before avalanche breakdown; enables use in 48 V and 100 V bus systems.
I_C	3 A - Continuous collector current rating; supports medium-power switching without forced cooling.
V_CE(sat)	150 mV (typ) at I_C = 1.5 A / I_B = 0.15 A - Low conduction loss reduces heat generation in saturated switch mode.
f_T	180 MHz (typ) at V_CE = –10 V / I_C = –0.5 A - Enables stable operation in high-frequency PWM and inverter applications.
t_on/t_f	100 ns / 50 ns - Fast turn-on and fall times minimize switching losses in hard-switched converters.
P_C @ T_c=25°C	20 W - High case-power dissipation capability supports compact heatsink designs in industrial enclosures.
Package	TP (TO-251) - Surface-mount, 4-pin single-lead package with exposed collector terminals for enhanced thermal transfer.

Pinout & Package

2SD1815S-H uses the TP (TO-251) package: molded plastic surface-mount housing with 4 terminals, two collector pins (pins 2 and 4) sharing internal connection, one emitter (pin 3), and one base (pin 1). The package meets JEITA SC-64 and JEDEC TO-251 standards and provides improved thermal resistance over through-hole alternatives.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input for forward-biased junction; requires ~0.15 A drive current to saturate at 1.5 A collector load.
2 & 4	Collector	Shared high-current output node; dual pins reduce current density and improve thermal path to PCB copper.
3	Emitter	Common return path; tied to ground or low-side reference in typical switch configurations.

Key Features

Feature	Design Value
Low V_CE(sat)	150 mV typ ensures <150 mW conduction loss at 1.5 A, reducing thermal stress in sealed enclosures.
High f_T	180 MHz typ allows stable linear amplification or switching up to 20–30 MHz without gain roll-off.
Fast switching	100 ns t_on and 50 ns t_f enable >500 kHz PWM operation with minimal dead-time overhead.
Halogen-free construction	Complies with IEC 61249-2-21 and RoHS; eliminates corrosive off-gassing during reflow or field failure.
TP package thermal design	Exposed collector pads provide direct thermal coupling to PCB copper, lowering θ_JA vs. SOP-8 equivalents.

Applications

Relay Driver Circuit	DC-DC Converter Switch
Use Scenario: Driving 24 V/1 A electromagnetic relays in industrial PLC output modules. IC Role / Device Role / Timing Role: NPN switch controlling relay coil current; operated in saturation with fixed base drive. Use Value: Low V_CE(sat) minimizes coil voltage drop and ensures reliable relay pull-in at low supply margins.	Use Scenario: High-side or low-side switch in 12 V → 5 V buck converter operating at 300 kHz. IC Role / Device Role / Timing Role: Primary power switch handling peak currents up to 2.5 A in discontinuous conduction mode. Use Value: Fast t_f = 50 ns reduces switching loss contribution, improving efficiency by ~0.8% at full load.
Inverter Half-Bridge Stage	Motor Control Gate Driver Interface
Use Scenario: Complementary pair with 2SB1215S-H in 48 V BLDC inverter half-bridge for e-bike controllers. IC Role / Device Role / Timing Role: NPN component in totem-pole output stage driving MOSFET gates with 1.5 A peak current. Use Value: High f_T and linear h_FE ensure accurate gate charge/discharge timing across temperature range.	Use Scenario: Level-shifting and current-amplifying interface between MCU GPIO and high-current gate driver IC. IC Role / Device Role / Timing Role: Buffer transistor translating 3.3 V logic to 12 V/1 A gate drive pulses. Use Value: Dual collector pins handle pulsed 1.5 A loads without trace overheating, supporting 100 ns pulse fidelity.

Relay Driver Circuit

DC-DC Converter Switch

Use Scenario: Driving 24 V/1 A electromagnetic relays in industrial PLC output modules.

IC Role / Device Role / Timing Role: NPN switch controlling relay coil current; operated in saturation with fixed base drive.

Use Value: Low V_CE(sat) minimizes coil voltage drop and ensures reliable relay pull-in at low supply margins.

Use Scenario: High-side or low-side switch in 12 V → 5 V buck converter operating at 300 kHz.

IC Role / Device Role / Timing Role: Primary power switch handling peak currents up to 2.5 A in discontinuous conduction mode.

Use Value: Fast t_f = 50 ns reduces switching loss contribution, improving efficiency by ~0.8% at full load.

Inverter Half-Bridge Stage

Motor Control Gate Driver Interface

Use Scenario: Complementary pair with 2SB1215S-H in 48 V BLDC inverter half-bridge for e-bike controllers.

IC Role / Device Role / Timing Role: NPN component in totem-pole output stage driving MOSFET gates with 1.5 A peak current.

Use Value: High f_T and linear h_FE ensure accurate gate charge/discharge timing across temperature range.

Use Scenario: Level-shifting and current-amplifying interface between MCU GPIO and high-current gate driver IC.

IC Role / Device Role / Timing Role: Buffer transistor translating 3.3 V logic to 12 V/1 A gate drive pulses.

Use Value: Dual collector pins handle pulsed 1.5 A loads without trace overheating, supporting 100 ns pulse fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = 100 V, I_C = 2 A, V_CE(sat) = 1.2 V (max) at I_C = 1.2 A - higher saturation voltage, lower current rating.	Less suitable for >1.5 A continuous switching; better for lower-power linear amplification.	Select 2SD1815S-H when <400 mV V_CE(sat) and 3 A I_C are required; MJD127G fits space-constrained TO-252 layouts.
2SD2118K	V_CEO = 120 V, I_C = 3 A, f_T = 120 MHz (typ), TP-FA (TO-252) package - higher voltage rating but lower f_T and different footprint.	Preferred in 100–120 V bus systems where layout accommodates wider TO-252 body.	Choose 2SD1815S-H for 100 V systems needing faster switching; 2SD2118K suits higher-voltage, lower-frequency designs with TO-252 land patterns.

Compared with MJD127G and 2SD2118K, the 2SD1815S-H delivers superior combination of low V_CE(sat), high f_T, and TP package thermal performance-making it optimal for compact, high-efficiency 48–100 V switching nodes where both conduction and switching losses must be minimized.

Availability

2SD1815S-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control interfaces requiring stable component supply, halogen-free compliance, and consistent TP-package thermal behavior across production batches.

Supply support for 2SD1815S-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SD1815S-H belongs to onsemi's general-purpose bipolar transistor family engineered for robust high-current switching in industrial power electronics, emphasizing low saturation voltage, fast transient response, and surface-mount reliability.

FAQ

What is the maximum continuous collector current rating for the 2SD1815S-H?

The 2SD1815S-H has a maximum continuous collector current (I_C) rating of 3 A at T_c = 25°C. This rating assumes proper PCB copper area for thermal dissipation; derating is required above 25°C case temperature per the PC–Tc curve in the official datasheet. At T_c = 100°C, the usable I_C drops to approximately 1.2 A.

Is the 2SD1815S-H pin-compatible with the 2SD1815S-E?

Yes, the 2SD1815S-H is pin-compatible with the 2SD1815S-E - both share identical TP (TO-251) package dimensions, pin numbering (1=Base, 2&4=Collector, 3=Emitter), and electrical specifications. The only difference is halogen-free compliance: 2SD1815S-H meets JESD204B halogen-free requirements, while 2SD1815S-E is Pb-free only.

What is the typical gain-bandwidth product (f_T) of the 2SD1815S-H and how is it measured?

The typical f_T of the 2SD1815S-H is 180 MHz, measured under conditions of V_CE = –10 V and I_C = –0.5 A. This value reflects the frequency at which small-signal current gain drops to unity and confirms suitability for high-speed switching up to ~20–30 MHz in practical circuits with adequate layout control.

Does the 2SD1815S-H have built-in ESD protection?

No, the 2SD1815S-H does not include integrated ESD protection diodes. It is rated for human-body-model (HBM) ESD per JEDEC JS-001 at ±2 kV (Class C), meaning external protection (e.g., series resistors or TVS) is recommended in handling and board-level environments with static risk.

Can the 2SD1815S-H be used in linear amplifier applications?

While the 2SD1815S-H is optimized for switching, its excellent h_FE linearity (140–400 at I_C = 0.5 A, 40 min at I_C = 2 A) and f_T = 180 MHz support limited Class-A or AB audio preamplifier use below 10 MHz. However, thermal design must account for continuous dissipation - maximum P_C is 20 W only at T_c = 25°C.

2SD1815S-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SD1815S-H FAQ

1.How can I place an order for 2SD1815S-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1815S-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1815S-H reliable?

The price and inventory of 2SD1815S-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1815S-H is usually 5 days.

3.What payment methods are accepted for 2SD1815S-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1815S-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1815S-H?

2SD1815S-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1815S-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1815S-H?

For technical support, including 2SD1815S-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1815S-H requirements.

6.How does Aetrix verify that 2SD1815S-H is sourced from the original manufacturer or authorized distributors?

All 2SD1815S-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1815S-H meets industry standards.

7.What is the process for return or replacement of 2SD1815S-H?

All 2SD1815S-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1815S-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1815S-H part is unused and in its original packaging.

Return procedure for 2SD1815S-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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