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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1815S-TL-E

Name: 2SD1815S-TL-E
Brand: onsemi
SKU: 2SD1815S-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1815S-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SD1815S-TL-E.pdf

Description:: TRANS NPN 100V 3A TP-FA

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Product details

Overview

2SD1815S-TL-E from onsemi is an NPN bipolar junction transistor rated for −100 V V_CEO, 3 A I_C, and low 150–400 mV V_CE(sat) at I_C = −1.5 A / I_B = −0.15 A, optimized for high-current switching in relay drivers and DC-DC converters using the TP-FA (SC-63/TO-252) surface-mount package.

For engineers reviewing the 2SD1815S-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 1.5 A, h_FE rank S (140–280), f_T ≥ 130 MHz, fast switching (t_on = 100 ns, t_f = 50 ns), and Pb-free/halogen-free TP-FA packaging with 700 pcs/reel tape-and-reel delivery.

Technical Context

This NPN transistor employs epitaxial planar die construction with optimized base doping to achieve high f_T (130–180 MHz) and excellent h_FE linearity across I_C = 0.5 A to 2 A. Its low V_CE(sat) stems from reduced base resistance and emitter efficiency design, enabling efficient operation in saturated-switching topologies.

The device operates within a −55 °C to +150 °C storage/junction temperature range and is rated for 20 W P_C at T_c = 25 °C. It is not intended for linear amplification but specifically engineered for robust, repetitive hard-switching duty in industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Withstands 100 V collector-to-emitter voltage in open-base switching, suitable for 48 V bus and flyback snubber circuits.
I_C	−3 A continuous - Supports sustained 3 A load current without thermal runaway when mounted on ≥1 cm² copper pad.
V_CE(sat)	150–400 mV @ I_C = −1.5 A / I_B = −0.15 A - Enables <0.6 W conduction loss per device in high-efficiency switch-mode designs.
f_T	130–180 MHz - Ensures clean turn-off and minimal storage time in >100 kHz PWM applications like motor gate drivers.
t_on/t_f	100 ns / 50 ns - Reduces switching transition losses and EMI generation in fast-switching inverters and converters.
h_FE Rank	S (140–280) @ V_CE = −5 V, I_C = −0.5 A - Provides predictable base drive requirements for deterministic gate control in discrete driver stages.
Package	TP-FA (SC-63 / TO-252) - Surface-mount thermally enhanced outline with dual collector terminals for low-inductance, high-current PCB routing.

Pinout & Package

2SD1815S-TL-E uses the TP-FA (SC-63/TO-252) package: a 4-pin surface-mount outline with exposed thermal pad, dual collector terminals (pins 2 and 4), emitter (pin 3), and base (pin 1). The package supports 20 W dissipation at T_c = 25 °C and is compatible with standard reflow profiles for Pb-free assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring −0.15 A drive for full saturation at 1.5 A collector current; low-impedance path to internal base region.
2 & 4	Collector	Dual parallel collector terminals reduce current density and package inductance; both must be connected to high-current output node.
3	Emitter	Power return path; tied to system ground or low-side switch node; carries full load current with minimal voltage drop.

Key Features

Feature	Design Value
Low V_CE(sat)	150–400 mV at 1.5 A enables <0.6 W conduction loss, improving thermal margin in compact power modules.
High f_T	130–180 MHz ensures stable high-frequency switching up to 200 kHz with minimal phase lag in feedback-controlled converters.
Fast switching	100 ns turn-on and 50 ns fall time minimize dead-time losses and allow tighter PWM resolution in digital controllers.
Rank-S h_FE	140–280 gain band allows precise base resistor selection for consistent saturation across production lots without trimming.
Pb-free & halogen-free	Meets IPC/JEDEC J-STD-609 Category 1 and IEC 61249-2-21 requirements for RoHS-compliant industrial manufacturing.

Applications

Relay Driver Stage	DC-DC Converter Switch
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control. IC Role / Device Role / Timing Role: High-current NPN switch sinking relay coil current; operates in saturation with fixed 10:1 I_C:I_B ratio. Use Value: Low 150 mV V_CE(sat) minimizes coil voltage droop and ensures reliable relay pull-in at end-of-life supply voltages.	Use Scenario: Main switching element in 48 V input, 12 V output non-isolated buck converter for industrial sensors. IC Role / Device Role / Timing Role: Power stage transistor switching at 150 kHz; driven by dedicated gate driver IC with 0.15 A peak base current. Use Value: 130 MHz f_T and 50 ns fall time enable clean zero-voltage switching transitions, reducing MOSFET body diode stress in synchronous designs.
Inverter Half-Bridge Leg	High-Speed Inverter Output
Use Scenario: Low-side switch in three-phase motor inverter leg, paired with complementary PNP 2SB1215S-TL-E. IC Role / Device Role / Timing Role: Fast-turning NPN switch handling 3 A peak phase current; synchronized with complementary PNP via matched propagation delay. Use Value: Matched t_on/t_f (100 ns / 50 ns) with 2SB1215S-TL-E minimizes shoot-through risk during commutation in 20 kHz PWM drives.	Use Scenario: Output stage in high-speed logic-level inverter for encoder signal conditioning in servo feedback loops. IC Role / Device Role / Timing Role: Digital switch translating 3.3 V CMOS logic to 5 V/100 mA open-collector output with sub-200 ns propagation. Use Value: 180 MHz f_T and low C_ob (25 pF) preserve edge integrity up to 10 MHz, supporting 20 MPPS quadrature decoding.

Relay Driver Stage

DC-DC Converter Switch

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control.

IC Role / Device Role / Timing Role: High-current NPN switch sinking relay coil current; operates in saturation with fixed 10:1 I_C:I_B ratio.

Use Value: Low 150 mV V_CE(sat) minimizes coil voltage droop and ensures reliable relay pull-in at end-of-life supply voltages.

Use Scenario: Main switching element in 48 V input, 12 V output non-isolated buck converter for industrial sensors.

IC Role / Device Role / Timing Role: Power stage transistor switching at 150 kHz; driven by dedicated gate driver IC with 0.15 A peak base current.

Use Value: 130 MHz f_T and 50 ns fall time enable clean zero-voltage switching transitions, reducing MOSFET body diode stress in synchronous designs.

Inverter Half-Bridge Leg

High-Speed Inverter Output

Use Scenario: Low-side switch in three-phase motor inverter leg, paired with complementary PNP 2SB1215S-TL-E.

IC Role / Device Role / Timing Role: Fast-turning NPN switch handling 3 A peak phase current; synchronized with complementary PNP via matched propagation delay.

Use Value: Matched t_on/t_f (100 ns / 50 ns) with 2SB1215S-TL-E minimizes shoot-through risk during commutation in 20 kHz PWM drives.

Use Scenario: Output stage in high-speed logic-level inverter for encoder signal conditioning in servo feedback loops.

IC Role / Device Role / Timing Role: Digital switch translating 3.3 V CMOS logic to 5 V/100 mA open-collector output with sub-200 ns propagation.

Use Value: 180 MHz f_T and low C_ob (25 pF) preserve edge integrity up to 10 MHz, supporting 20 MPPS quadrature decoding.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD1815G	Same V_CEO (−100 V), higher I_C (5 A), but larger DPAK (TO-252) variant with 250–500 mV V_CE(sat) at 2 A.	Higher current headroom but slower t_f (100 ns) limits use above 50 kHz; requires larger PCB footprint.	Select MJD1815G only if >3 A peak current or >100 °C ambient operation is required; verify thermal pad layout compatibility.
SS8050DWT	Lower V_CEO (−25 V), lower I_C (1.5 A), smaller SOT-23 package, and no dual-collector configuration.	Not suitable for 48 V bus or >2 A loads; limited to low-power signal switching below 100 kHz.	Use SS8050DWT only in space-constrained 5–12 V logic interfaces where 2SD1815S-TL-E's voltage/current capability is excessive.

Compared with MJD1815G and SS8050DWT, the 2SD1815S-TL-E delivers optimal balance of 100 V blocking, 3 A current, 150 mV saturation, and 50 ns fall time in a standard TP-FA footprint-making it the preferred choice for industrial 48 V switching where thermal density and EMI control are critical.

Availability

2SD1815S-TL-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and high-speed inverters requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for 2SD1815S-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SD1815S-TL-E belongs to onsemi's general-purpose bipolar transistor family designed specifically for high-reliability, high-current switching in industrial power conversion and electromechanical control systems.

FAQ

What is the maximum continuous collector current rating for the 2SD1815S-TL-E?

The 2SD1815S-TL-E is rated for −3 A continuous collector current (I_C) at T_c = 25 °C. Derating is required above 25 °C case temperature per the PC–Tc curve in the datasheet; at T_c = 100 °C, the usable I_C drops to approximately 1.2 A. This rating assumes proper PCB copper area (≥1 cm²) for thermal conduction. The 2SD1815S-TL-E must not exceed its 20 W collector dissipation limit under any operating condition.

Does the 2SD1815S-TL-E have pin-compatible alternatives in the same TP-FA package?

No documented pin-compatible (drop-in) alternatives exist for the 2SD1815S-TL-E in the TP-FA (SC-63/TO-252) package with identical pin 1 (Base), pins 2 & 4 (dual Collector), and pin 3 (Emitter) assignment. While MJD1815G shares the same outline, its pinout differs (Base–Collector–Emitter), requiring PCB layout revision. The 2SD1815S-TL-E's dual-collector configuration is unique within its voltage/current class and must be accounted for in layout and thermal design.

What is the guaranteed h_FE range for the 2SD1815S-TL-E at I_C = −0.5 A?

The 2SD1815S-TL-E is binned to Rank S, guaranteeing h_FE between 140 and 280 when measured at V_CE = −5 V and I_C = −0.5 A. This range is confirmed per the datasheet's "Electrical Characteristics" table and applies to all units marked "2SD1815S-TL-E". Units marked "2SD1815T-TL-E" have a higher h_FE range (200–400) but share identical absolute maximum ratings and thermal characteristics with the 2SD1815S-TL-E.

Can the 2SD1815S-TL-E be used in linear amplifier applications?

The 2SD1815S-TL-E is not characterized or recommended for linear amplifier operation. Its datasheet specifies parameters exclusively for switching use - including V_CE(sat), switching times, and SOA curves - with no small-signal parameters (e.g., h_fe, r_bb′, noise figure) or linearity data provided. For analog amplification, onsemi's MMBT5551 or NSS series should be selected instead. The 2SD1815S-TL-E is optimized for saturated switching, not Class-A/B biasing.

What does the "TL" suffix indicate in the 2SD1815S-TL-E part number?

The "TL" suffix in 2SD1815S-TL-E denotes tape-and-reel packaging per JEDEC standard: 700 pieces per reel, Pb-free termination, and TP-FA (SC-63/TO-252) package. It distinguishes this version from bag-packed variants (e.g., 2SD1815S-E) and confirms compliance with J-STD-020 moisture sensitivity level 3. The 2SD1815S-TL-E is qualified for standard SnPb and Pb-free reflow processes with peak temperatures up to 260 °C.

2SD1815S-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SD1815S-TL-E FAQ

1.How can I place an order for 2SD1815S-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1815S-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1815S-TL-E reliable?

The price and inventory of 2SD1815S-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1815S-TL-E is usually 5 days.

3.What payment methods are accepted for 2SD1815S-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1815S-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1815S-TL-E?

2SD1815S-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1815S-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1815S-TL-E?

For technical support, including 2SD1815S-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1815S-TL-E requirements.

6.How does Aetrix verify that 2SD1815S-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SD1815S-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1815S-TL-E meets industry standards.

7.What is the process for return or replacement of 2SD1815S-TL-E?

All 2SD1815S-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1815S-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1815S-TL-E part is unused and in its original packaging.

Return procedure for 2SD1815S-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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