onsemi 2SD1815T-H

Overview

2SD1815T-H from onsemi is an NPN bipolar junction transistor designed for high-current switching in power control circuits, featuring V_CEO = 100 V, I_C = 3 A, V_CE(sat) = –150 mV (typ) at I_C = –1.5 A / I_B = –0.15 A, f_T = 180 MHz (typ), and packaged in TP (TO-251) with halogen-free and Pb-free compliance. It is used in relay drivers, DC-DC converters, and high-speed inverters.

For engineers reviewing the 2SD1815T-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified saturation voltage under pulsed 1.5 A load, hFE linearity across 0.5–2 A collector current range, TO-251 thermal dissipation capability (20 W at T_c = 25°C), and JEDEC SC-64 package compatibility with through-hole and surface-mount assembly processes.

Technical Context

The 2SD1815T-H operates as a general-purpose NPN switching transistor with low V_CE(sat) optimized for efficient power stage conduction and fast turn-on/turn-off transitions. Its hFE is binned by I_C = –0.5 A test condition into Rank T (200–400), ensuring predictable current gain in linear and saturated regions.

Designed for discrete power switching, it supports pulse currents up to I_CP = 6 A and exhibits t_on = 100 ns, t_stg = 900 ns, and t_f = 50 ns under specified test conditions. The device meets halogen-free and RoHS-compliant manufacturing standards per ordering suffix "-H".

Key Specifications

Pinout & Package

2SD1815T-H uses the TP package (JEDEC TO-251, JEITA SC-64), a 4-pin single-ended leadframe package with two collector terminals (pins 2 and 4) for enhanced current handling and thermal path. Pin 1 is Base, pin 3 is Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Compared with MJD127G and 2SC5418-TL-H, the 2SD1815T-H uniquely balances 3 A continuous current, 100 V blocking, ultra-low V_CE(sat), and TO-251 thermal performance - making it optimal for cost-sensitive, through-hole mounted industrial switching where both current and efficiency are critical.

Availability

2SD1815T-H is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter switches, and motor gate pre-drivers requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for 2SD1815T-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SD1815T-H belongs to onsemi's general-purpose bipolar transistor product line, engineered for robust high-current switching in industrial controls, power supplies, and motor interfaces where reliability and thermal performance are essential.

FAQ

What is the maximum continuous collector current rating for the 2SD1815T-H?

The 2SD1815T-H has a maximum continuous collector current (I_C) rating of 3 A at ambient temperature (T_a) = 25°C. This rating assumes proper PCB copper area or heatsinking; derating applies above 25°C ambient per the PC–Ta curve in the datasheet. At case temperature T_c = 25°C, it supports 20 W dissipation, enabling sustained 3 A operation with adequate thermal design. The 2SD1815T-H must not exceed this limit to ensure long-term reliability.

Does the 2SD1815T-H have a halogen-free and Pb-free construction?

Yes, the "-H" suffix in 2SD1815T-H explicitly denotes halogen-free and Pb-free compliance per onsemi's environmental specifications. It meets IEC 61249-2-21 for halogen content and JEDEC J-STD-020 for lead-free soldering profiles. This makes the 2SD1815T-H suitable for RoHS-compliant industrial and consumer products where regulatory conformity is required. No exemptions or exceptions apply to the 2SD1815T-H construction.

What is the pin configuration and package type of the 2SD1815T-H?

The 2SD1815T-H uses the TP package (JEDEC TO-251, JEITA SC-64), a 4-pin single-ended leadframe package with pins arranged as: Pin 1 = Base, Pins 2 & 4 = Collector (internally paralleled), Pin 3 = Emitter. This configuration provides dual-collector paths for improved current sharing and thermal conduction. The TP package is through-hole mountable and compatible with standard TO-251 footprints on PCBs.

How does the hFE ranking work for the 2SD1815T-H?

The "T" in 2SD1815T-H indicates hFE Rank T, meaning its DC current gain is binned between 200 and 400 when measured at V_CE = –5 V and I_C = –0.5 A. This tighter binning versus Rank S (140–280) ensures more predictable base drive requirements in production designs. The 2SD1815T-H's hFE remains stable across I_C = 0.5–2 A, supporting consistent switching behavior in variable-load applications.

What are the key switching timing parameters of the 2SD1815T-H?

The 2SD1815T-H specifies t_on = 100 ns, t_stg = 900 ns, and t_f = 50 ns under the defined test circuit (V_CC = 50 V, I_C = 10×I_B). These values reflect its suitability for high-frequency switching up to several hundred kHz. The low t_f enables sharp falling edges in inverter outputs, while the controlled t_stg helps minimize cross-conduction loss in complementary BJT stages. All timing data is validated at T_a = 25°C.