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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1815T-TL-H

Name: 2SD1815T-TL-H
Brand: onsemi
SKU: 2SD1815T-TL-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1815T-TL-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SD1815T-TL-H.pdf

Description:: TRANS NPN 100V 3A TP-FA

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Product details

Overview

2SD1815T-TL-H from onsemi is an NPN bipolar junction transistor designed for high-current switching in power control circuits, featuring V_CEO = –100 V, I_C = –3 A, V_CE(sat) = –150 mV (typ) at I_C = –1.5 A / I_B = –0.15 A, f_T = 180 MHz (typ), and housed in the TP-FA (SC-63/TO-252) surface-mount package. It is used in relay drivers, DC-DC converters, and high-speed inverters where low saturation voltage and fast switching are critical.

For engineers reviewing the 2SD1815T-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 1.5 A, h_FE linearity across 0.5–2 A, switching time (t_on/t_f ≤ 100 ns / 50 ns), TO-252-compatible thermal dissipation (20 W at T_c = 25°C), and halogen-free compliance per ordering suffix "-H".

Technical Context

This NPN transistor operates with a maximum collector-emitter breakdown voltage of –100 V and supports pulsed collector current up to –6 A. Its gain-bandwidth product of 180 MHz enables stable high-frequency switching in converter topologies requiring tight duty-cycle control.

The device uses a planar epitaxial structure with optimized base doping to achieve excellent h_FE linearity (140–400 across two rank grades) and low V_CE(sat) - critical for minimizing conduction loss in 24–48 V industrial power stages. The TP-FA package provides 2.3 mm pitch, dual-collector terminals, and 0.282 g mass for thermal reliability in reflow-soldered PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–100 V - Supports operation in 48 V bus systems with ≥2× safety margin against transients
I_C (cont)	–3 A - Rated continuous collector current enabling 30–50 W discrete switch designs without forced cooling
V_CE(sat)	–150 mV (typ) at I_C = –1.5 A - Reduces conduction loss to < 0.225 W, improving efficiency in PWM-driven loads
f_T	180 MHz (typ) - Enables clean square-wave switching up to ~20 MHz fundamental frequency in Class-E or resonant converters
t_on/t_f	100 ns / 50 ns - Limits switching energy loss during turn-on/turn-off transitions in hard-switched topologies
h_FE	200–400 (Rank T) - Ensures predictable base drive requirements across production lots for stable gate driver interface design
P_C @ T_c=25°C	20 W - Allows direct mounting to copper pour or heatsink for thermally constrained industrial PCB layouts

Pinout & Package

2SD1815T-TL-H is packaged in TP-FA (JEDEC TO-252, JEITA SC-63), a surface-mount power plastic package with exposed thermal pad, 7.0 mm × 5.0 mm footprint, and dual collector terminals for enhanced current handling and thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring 0.15 A base current to saturate at 1.5 A collector load; low-impedance path to drive circuit
2 & 4	Collector	Dual-terminal collector connection - reduces current density and thermal resistance; must be routed to same net
3	Emiter	Power return path; tied to ground or low-side reference; carries full load current and requires wide copper trace

Key Features

Feature	Design Value
Low V_CE(sat)	–150 mV typical at 1.5 A ensures < 0.23 W conduction loss, reducing thermal stress in compact enclosures
High f_T	180 MHz typical enables reliable operation in >10 MHz switching applications such as resonant LLC controllers
Excellent h_FE linearity	140–400 range maintained across 0.5–2 A collector current, simplifying base resistor selection for consistent saturation
TP-FA package	TO-252 outline with dual collector pins improves thermal resistance by ~15% vs. standard TO-252 and supports 20 W dissipation
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants for RoHS-compliant industrial end equipment

Applications

Relay Driver Circuit	DC-DC Boost Converter Switch
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control. IC Role / Device Role / Timing Role: High-gain NPN switch amplifying weak MCU output to deliver 1.5 A peak coil current with < 100 ns turn-on. Use Value: Low V_CE(sat) minimizes relay coil voltage drop, ensuring reliable pull-in at low supply voltages; dual-collector layout sustains repeated surge currents.	Use Scenario: Main switching element in 12 V → 48 V boost converter for telecom power supplies operating at 200 kHz. IC Role / Device Role / Timing Role: Fast-switching NPN power transistor handling 3 A inductive current pulses with minimal switching loss. Use Value: 180 MHz f_T and 50 ns fall time preserve waveform fidelity at high duty cycles; 20 W thermal rating allows operation without heatsink at 50°C ambient.
AC Inverter Half-Bridge	Industrial Motor Control Gate Driver Stage
Use Scenario: Low-side switch in 100 V, 2 A single-phase inverter driving universal motor loads in HVAC blowers. IC Role / Device Role / Timing Role: Hard-switched NPN transistor commutating inductive load current with controlled dI/dt via base drive tuning. Use Value: Verified 100 ns turn-on and –100 V V_CEO withstand capability prevent shoot-through and overvoltage failure during dead-time transitions.	Use Scenario: Level-shifting and current-amplifying stage between isolated gate driver IC and IGBT gate in 3-phase VFDs. IC Role / Device Role / Timing Role: High-linearity h_FE transistor delivering precise 1.2 A peak gate charge current with minimal propagation delay variation. Use Value: Tight h_FE spread (200–400) ensures consistent gate drive timing across temperature; TO-252 thermal pad enables direct thermal coupling to driver PCB copper.

Relay Driver Circuit

DC-DC Boost Converter Switch

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control.

IC Role / Device Role / Timing Role: High-gain NPN switch amplifying weak MCU output to deliver 1.5 A peak coil current with < 100 ns turn-on.

Use Value: Low V_CE(sat) minimizes relay coil voltage drop, ensuring reliable pull-in at low supply voltages; dual-collector layout sustains repeated surge currents.

Use Scenario: Main switching element in 12 V → 48 V boost converter for telecom power supplies operating at 200 kHz.

IC Role / Device Role / Timing Role: Fast-switching NPN power transistor handling 3 A inductive current pulses with minimal switching loss.

Use Value: 180 MHz f_T and 50 ns fall time preserve waveform fidelity at high duty cycles; 20 W thermal rating allows operation without heatsink at 50°C ambient.

AC Inverter Half-Bridge

Industrial Motor Control Gate Driver Stage

Use Scenario: Low-side switch in 100 V, 2 A single-phase inverter driving universal motor loads in HVAC blowers.

IC Role / Device Role / Timing Role: Hard-switched NPN transistor commutating inductive load current with controlled dI/dt via base drive tuning.

Use Value: Verified 100 ns turn-on and –100 V V_CEO withstand capability prevent shoot-through and overvoltage failure during dead-time transitions.

Use Scenario: Level-shifting and current-amplifying stage between isolated gate driver IC and IGBT gate in 3-phase VFDs.

IC Role / Device Role / Timing Role: High-linearity h_FE transistor delivering precise 1.2 A peak gate charge current with minimal propagation delay variation.

Use Value: Tight h_FE spread (200–400) ensures consistent gate drive timing across temperature; TO-252 thermal pad enables direct thermal coupling to driver PCB copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD1815G	Same V_CEO/I_C ratings but TO-252-3 (single collector pin); V_CE(sat) = –200 mV (max) vs. –150 mV (typ) for 2SD1815T-TL-H	Lacks dual-collector terminals; lower f_T (120 MHz) limits use above 15 MHz switching	Select when cost sensitivity outweighs thermal performance; verify layout accommodates higher saturation loss
2SD2118K-TL-H	Higher V_CEO (–120 V), same TP-FA package; V_CE(sat) = –250 mV (max) at 1.5 A; h_FE = 120–240 (lower gain range)	Better voltage margin for 72 V systems but reduced current gain requires stronger base drive	Choose for 60–100 V bus applications where voltage headroom is prioritized over gain linearity

Compared with MJD1815G and 2SD2118K-TL-H, the 2SD1815T-TL-H delivers superior combination of low V_CE(sat), high f_T, and dual-collector thermal design - making it optimal for space-constrained, high-efficiency 48 V industrial switching where both conduction and switching losses must be minimized.

Availability

2SD1815T-TL-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and high-speed inverters requiring stable component supply, halogen-free compliance, and TO-252-compatible thermal management.

Supply support for 2SD1815T-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SD1815T-TL-H belongs to onsemi's general-purpose bipolar transistor family engineered for high-reliability industrial switching - emphasizing low saturation voltage, gain consistency, and robust thermal packaging for long-lifecycle embedded power systems.

FAQ

What is the maximum continuous collector current rating for the 2SD1815T-TL-H?

The 2SD1815T-TL-H has a maximum continuous collector current (I_C) rating of –3 A at T_c = 25°C. This rating assumes proper PCB copper area and thermal management per the TP-FA package land pattern. Derating applies above 25°C case temperature - at 100°C, the usable I_C drops to approximately –1.8 A per the derating curve in the official datasheet.

Does the 2SD1815T-TL-H support pulse operation beyond its continuous current rating?

Yes, the 2SD1815T-TL-H supports pulsed collector current (I_CP) up to –6 A under specified conditions: pulse width ≤ 10 ms, duty cycle ≤ 10%, and T_c ≤ 25°C. This capability is validated in the datasheet's Absolute Maximum Ratings table and enables short-duration overload handling in motor start-up or inrush limiting circuits.

What does the "-TL-H" suffix indicate in 2SD1815T-TL-H?

The "-TL-H" suffix denotes tape-and-reel packaging (TL) and halogen-free construction (H). Specifically, "TL" means the device ships in 700 pcs./reel format compatible with automated SMT placement; "H" certifies compliance with IEC 61249-2-21 for absence of brominated flame retardants - confirmed in onsemi's material declarations.

How is the dual-collector configuration (pins 2 and 4) implemented in the 2SD1815T-TL-H?

Pins 2 and 4 of the 2SD1815T-TL-H are internally connected to the same collector region and must be externally tied to the same net on the PCB. This dual-terminal design lowers effective current density and thermal resistance - measured at 0.282 g mass and optimized copper pad layout - enabling higher power dissipation than standard TO-252 variants.

Is the 2SD1815T-TL-H pin-compatible with other devices in the 2SD1815 family?

Yes, all 2SD1815 variants - including 2SD1815S-E, 2SD1815T-H, and 2SD1815T-TL-H - share identical TP-FA pinout (pin 1 = Base, pins 2 & 4 = Collector, pin 3 = Emitter) and mechanical footprint. Differences lie only in h_FE rank (S vs. T), packaging (bag vs. reel), and environmental compliance (E vs. H), not electrical or physical compatibility.

2SD1815T-TL-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SD1815T-TL-H FAQ

1.How can I place an order for 2SD1815T-TL-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1815T-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1815T-TL-H reliable?

The price and inventory of 2SD1815T-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1815T-TL-H is usually 5 days.

3.What payment methods are accepted for 2SD1815T-TL-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1815T-TL-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1815T-TL-H?

2SD1815T-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1815T-TL-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1815T-TL-H?

For technical support, including 2SD1815T-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1815T-TL-H requirements.

6.How does Aetrix verify that 2SD1815T-TL-H is sourced from the original manufacturer or authorized distributors?

All 2SD1815T-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1815T-TL-H meets industry standards.

7.What is the process for return or replacement of 2SD1815T-TL-H?

All 2SD1815T-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1815T-TL-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1815T-TL-H part is unused and in its original packaging.

Return procedure for 2SD1815T-TL-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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