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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1816S-H

Name: 2SD1816S-H
Brand: onsemi
SKU: 2SD1816S-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1816S-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SD1816S-H.pdf

Description:: TRANS NPN 100V 4A TP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1816S-H from onsemi is an NPN bipolar junction transistor rated for −100 V V_CEO, 4 A I_C, and 1 W P_C at T_c = 25°C, featuring low V_CE(sat) (−150 mV typ. at I_C = −2 A, I_B = −0.2 A), high f_T (180 MHz typ.), and fast switching (t_on = 100 ns, t_f = 50 ns). It is used in high-current switching applications such as relay drivers and DC-DC converters.

For engineers reviewing the 2SD1816S-H datasheet, pinout, applications, or equivalent options, key selection considerations include its IPAK package pin configuration, guaranteed h_FE range (140–280 at I_C = −0.5 A), V_CE(sat) performance under pulsed load, thermal derating above 25°C, and Pb-free/halogen-free compliance per ordering code S-H.

Technical Context

The 2SD1816S-H operates as a general-purpose NPN power switching transistor with complementary PNP counterpart 2SB1216S-H. Its design emphasizes low saturation voltage and high gain-bandwidth product to support efficient, high-speed switching in hard-saturation drive configurations.

It uses a single-die construction in IPAK (Case 369AJ) with dual collector terminals (pins 2 and 4) for enhanced current handling and thermal path optimization. Electrical characteristics are specified at T_a = 25°C with derating curves provided for elevated ambient and case temperatures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage ceiling in switching circuits.
I_C	−4 A - Continuous DC collector current rating at T_c = 25°C; usable up to 8 A in pulsed mode (I_CP).
V_CE(sat)	−150 mV (typ.) at I_C = −2 A, I_B = −0.2 A - Low saturation voltage reduces conduction loss and self-heating during on-state operation.
f_T	180 MHz (typ.) at V_CE = −10 V, I_C = −0.5 A - High transition frequency supports stable amplification and fast edge response in switching waveforms.
h_FE	140–280 at V_CE = −5 V, I_C = −0.5 A - Guaranteed DC current gain range enables predictable base drive sizing for reliable saturation.
t_f	50 ns - Fast fall time minimizes switching transition losses in PWM and inverter topologies operating up to several hundred kHz.

Pinout & Package

2SD1816S-H is housed in IPAK (Case 369AJ), a surface-mount power package with exposed drain pad for thermal dissipation. Pin 1 is Base, pins 2 and 4 are Collector (internally tied), and pin 3 is Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for injecting base current to bias transistor into active or saturation region; requires current-limiting resistor in driver stage.
2 & 4	Collector	Dual-collector configuration lowers effective series resistance and improves thermal spreading; both pins must be connected to high-side switch node or heat sink.
3	Emitter	Common reference terminal for load return path; connects to ground or low-side rail in low-side switch topology.

Key Features

Feature	Design Value
Low V_CE(sat)	−150 mV typical at I_C = −2 A ensures <150 mW conduction loss per device, reducing thermal stress in parallel or high-duty-cycle operation.
High f_T	180 MHz typical enables stable small-signal amplification and clean square-wave reproduction in gate-driving and signal-buffering roles.
Fast switching	50 ns fall time + 100 ns turn-on time supports >1 MHz switching in resonant or soft-switching topologies with minimal overlap loss.
IPAK thermal design	Exposed collector pad (pins 2 & 4) provides direct thermal path to PCB copper; achieves ~40°C/W θ_JA with 1-in² 2-oz Cu pad.

Applications

Relay Driver Circuits	DC-DC Converter Switches
Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current with fast release timing. IC Role / Device Role / Timing Role: NPN power switch sinking relay coil current to ground; operates in saturation with forced β ≈ 10. Use Value: Low V_CE(sat) limits relay coil voltage drop to ≤150 mV, preserving full supply voltage across coil for rapid de-energization.	Use Scenario: High-side or low-side switching element in buck, boost, or flyback converter primary stages. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer between input and output; driven by PWM controller with base current limiting. Use Value: 180 MHz f_T and 50 ns t_f allow stable operation at 500 kHz–1 MHz switching frequencies without phase lag or ringing.
Inverter Output Stages	Industrial Motor Control
Use Scenario: Half-bridge leg in 24–48 V DC input inverters powering AC induction loads. IC Role / Device Role / Timing Role: Low-side switch in complementary pair; commutates load current with minimal dead-time penalty. Use Value: Dual-collector (pins 2 & 4) configuration reduces current density and junction temperature rise during 4 A continuous conduction.	Use Scenario: Solid-state replacement for mechanical contactors in HVAC blower or pump control modules. IC Role / Device Role / Timing Role: High-current switching element interfacing microcontroller GPIO to motor winding via optocoupler-isolated base drive. Use Value: Guaranteed h_FE ≥140 ensures robust saturation with ≤200 mA base drive, simplifying driver IC selection and PCB layout.

Relay Driver Circuits

DC-DC Converter Switches

Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current with fast release timing.

IC Role / Device Role / Timing Role: NPN power switch sinking relay coil current to ground; operates in saturation with forced β ≈ 10.

Use Value: Low V_CE(sat) limits relay coil voltage drop to ≤150 mV, preserving full supply voltage across coil for rapid de-energization.

Use Scenario: High-side or low-side switching element in buck, boost, or flyback converter primary stages.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer between input and output; driven by PWM controller with base current limiting.

Use Value: 180 MHz f_T and 50 ns t_f allow stable operation at 500 kHz–1 MHz switching frequencies without phase lag or ringing.

Inverter Output Stages

Industrial Motor Control

Use Scenario: Half-bridge leg in 24–48 V DC input inverters powering AC induction loads.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair; commutates load current with minimal dead-time penalty.

Use Value: Dual-collector (pins 2 & 4) configuration reduces current density and junction temperature rise during 4 A continuous conduction.

Use Scenario: Solid-state replacement for mechanical contactors in HVAC blower or pump control modules.

IC Role / Device Role / Timing Role: High-current switching element interfacing microcontroller GPIO to motor winding via optocoupler-isolated base drive.

Use Value: Guaranteed h_FE ≥140 ensures robust saturation with ≤200 mA base drive, simplifying driver IC selection and PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = −100 V, I_C = −5 A, V_CE(sat) = −1.2 V (max) at I_C = −3 A - higher saturation voltage, lower f_T (3 MHz).	Less suitable for high-frequency switching; better for linear regulation or slow-switching industrial controls.	Select MJD127G only when higher current rating outweighs need for low-loss or high-speed operation.
SS8050LT1G	V_CEO = −25 V, I_C = −1.5 A, SOT-23 package - significantly lower voltage/current ratings and no dual-collector thermal enhancement.	Limited to low-power signal switching; not viable for 4 A relay or converter use.	Use SS8050LT1G only in space-constrained, low-voltage (<20 V), sub-1 A applications where thermal performance is secondary.

Compared with MJD127G and SS8050LT1G, the 2SD1816S-H uniquely balances 4 A current capability, −100 V blocking, low −150 mV V_CE(sat), and 180 MHz f_T in a thermally optimized IPAK package-making it the only option among the three qualified for high-efficiency, high-frequency, high-current switching at ≤100 V.

Availability

2SD1816S-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and industrial motor control applications requiring stable component supply, halogen-free compliance, and consistent parametric binning (Rank S: h_FE = 140–280).

Supply support for 2SD1816S-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2SD1816S-H belongs to onsemi's general-purpose bipolar power transistor family, designed specifically for high-current, medium-voltage switching in compact, thermally demanding applications such as power supplies and motor interfaces.

FAQ

What is the package type and lead finish of 2SD1816S-H?

The 2SD1816S-H uses the IPAK (Case 369AJ) surface-mount package with dual collector terminals (pins 2 and 4). It features Pb-free and halogen-free plating per the "-H" suffix, compliant with RoHS Directive 2011/65/EU and JEDEC JS709B. The package exposes the collector metal on the underside for direct thermal attachment to PCB copper.

Does 2SD1816S-H have a guaranteed h_FE range, and how is it binned?

Yes, the 2SD1816S-H is binned to Rank S, guaranteeing h_FE = 140–280 at V_CE = −5 V and I_C = −0.5 A. This binning is marked as "D1816" on the device body and confirmed in the official onsemi datasheet revision 2 (March 2016). Rank T (200–400) is available under part number 2SD1816T-H.

What is the maximum pulsed collector current rating for 2SD1816S-H?

The 2SD1816S-H supports I_CP = −8 A as the absolute maximum pulsed collector current, defined with duty cycle ≤2% and pulse width ≤300 μs per the datasheet's Absolute Maximum Ratings table. This rating assumes T_c ≤ 25°C and proper PCB thermal design to limit junction temperature rise.

Can 2SD1816S-H be used in parallel configurations, and what precautions apply?

Yes, the dual-collector (pins 2 and 4) and matched h_FE binning make the 2SD1816S-H suitable for paralleling. To ensure current sharing, use individual base resistors, symmetric PCB layout, and thermal coupling (shared heatsink or copper area). Derate total current by ≥20% versus sum of individual I_C ratings due to parameter spread and thermal feedback.

Is there a complementary PNP transistor for 2SD1816S-H in the same package and rating?

Yes, the 2SB1216S-H is the complementary PNP device, sharing identical IPAK packaging, −100 V V_CEO, −4 A I_C, −150 mV V_CE(sat) (typ.), and Rank S h_FE (140–280). Both devices are co-designed for push-pull, H-bridge, and complementary Darlington configurations requiring matched thermal and electrical behavior.

2SD1816S-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SD1816S-H FAQ

1.How can I place an order for 2SD1816S-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1816S-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1816S-H reliable?

The price and inventory of 2SD1816S-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1816S-H is usually 5 days.

3.What payment methods are accepted for 2SD1816S-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1816S-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1816S-H?

2SD1816S-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1816S-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1816S-H?

For technical support, including 2SD1816S-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1816S-H requirements.

6.How does Aetrix verify that 2SD1816S-H is sourced from the original manufacturer or authorized distributors?

All 2SD1816S-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1816S-H meets industry standards.

7.What is the process for return or replacement of 2SD1816S-H?

All 2SD1816S-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1816S-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1816S-H part is unused and in its original packaging.

Return procedure for 2SD1816S-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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