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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1816S-TL-HQ

Name: 2SD1816S-TL-HQ
Brand: onsemi
SKU: 2SD1816S-TL-HQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1816S-TL-HQ

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SD1816S-TL-HQ.pdf

Description:: TRANS NPN 100V 4A DPAK/TP-FA

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Product details

Overview

2SD1816S-TL-HQ from onsemi is an NPN bipolar junction transistor rated for −100 V V_CEO, −4 A I_C, with low V_CE(sat) of −400 mV at I_C = −2 A / I_B = −0.2 A, f_T = 180 MHz, and housed in a Pb-free/halogen-free DPAK (TP-FA) package. It serves as a high-current switching device in DC-DC converters and relay drivers.

For engineers reviewing the 2SD1816S-TL-HQ datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat), h_FE linearity at 0.5 A and 3 A, switching speed (t_on = 100 ns, t_f = 50 ns), Cob = 40 pF, and DPAK thermal performance (P_C = 20 W at T_C = 25°C).

Technical Context

This NPN transistor operates in linear and saturated switching modes, with h_FE specified across two bias points: 140–400 at I_C = −0.5 A and 40 min at I_C = −3 A, supporting stable gain control in variable-load applications. Its f_T of 180 MHz enables use in high-speed inverters up to several hundred kHz.

V_CE(sat) remains tightly bounded (−150 to −400 mV) under forced β = 10 conditions, and Cob of 40 pF minimizes Miller effect during turn-off. The device shares pinout and footprint with 2SB1216 (PNP complement) in identical DPAK packages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - supports bus voltages up to 80 V DC with 20% margin in industrial power stages
I_C	−4 A continuous - drives solenoids, MOSFET gates, or IGBT bases without external amplification
V_CE(sat)	−400 mV max at I_C = −2 A / I_B = −0.2 A - reduces conduction loss to ≤0.8 W at full load
f_T	180 MHz - ensures stable small-signal amplification and fast edge response in PWM gate drivers
Cob	40 pF - limits capacitive loading on driver stage, enabling clean 50 ns fall time
t_on/t_f	100 ns / 50 ns - supports switching frequencies >1 MHz in resonant topologies with minimal dead-time penalty

Pinout & Package

2SD1816S-TL-HQ uses the DPAK (TP-FA) surface-mount package (Case 369AH), featuring exposed drain pad for thermal dissipation and optimized for automated reflow. Package dimensions: 7.0 × 6.2 × 2.3 mm, with 1.5 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring −0.2 A drive current to saturate at −2 A collector load
2	Collector	Main current path terminal; electrically tied to pin 4; connects to load return or heat sink via exposed pad
3	Emitter	Reference node for base drive and current sensing; low-inductance path critical for fast switching
4	Collector	Second collector connection - paralleled with pin 2 to reduce bond wire inductance and improve thermal spreading

Key Features

Feature	Design Value
Low V_CE(sat)	−400 mV max enables <0.8 W conduction loss at 2 A, reducing heatsink requirements in space-constrained converters
High f_T	180 MHz supports stable small-signal gain up to 50 MHz, suitable for RF predriver and high-frequency PWM stages
Good h_FE linearity	h_FE = 140–400 @ 0.5 A and ≥40 @ 3 A - maintains predictable base drive scaling across load range
Fast switching	t_on = 100 ns, t_f = 50 ns - minimizes overlap loss in half-bridge configurations operating above 500 kHz

Applications

Relay Driver Stage	DC-DC Converter Switch
Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules with 20 ms response requirement. IC Role / Device Role / Timing Role: High-current NPN switch sinking relay coil current (≤2.5 A) with forced β = 10. Use Value: Low V_CE(sat) keeps coil voltage drop ≤0.4 V, ensuring reliable pull-in at minimum supply; fast t_f prevents contact bounce during de-energization.	Use Scenario: Main switching element in 48 V input, 12 V output synchronous buck converter at 300 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling energy transfer into output inductor; driven by gate driver IC. Use Value: 50 ns fall time and 40 pF Cob minimize switching loss and EMI generation; DPAK thermal interface sustains 20 W dissipation at T_C = 25°C.
Inverter Half-Bridge	Industrial Motor Control
Use Scenario: Upper-leg switch in 200 V DC-link H-bridge driving 100 W BLDC motor. IC Role / Device Role / Timing Role: NPN high-side switch with bootstrap gate drive; requires low storage time to avoid shoot-through. Use Value: t_stg = 900 ns and fast t_f allow safe 1 μs dead time; h_FE stability ensures consistent base current across temperature.	Use Scenario: Current-sense amplifier front-end transistor in overcurrent protection circuit for 3-phase VFD. IC Role / Device Role / Timing Role: Precision current mirror reference transistor biased at 0.5 A with matched h_FE. Use Value: Tight h_FE spread (140–400) and linearity between 0.5 A and 3 A enable ±2% current replication accuracy across unit-to-unit variation.

Relay Driver Stage

DC-DC Converter Switch

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules with 20 ms response requirement.

IC Role / Device Role / Timing Role: High-current NPN switch sinking relay coil current (≤2.5 A) with forced β = 10.

Use Value: Low V_CE(sat) keeps coil voltage drop ≤0.4 V, ensuring reliable pull-in at minimum supply; fast t_f prevents contact bounce during de-energization.

Use Scenario: Main switching element in 48 V input, 12 V output synchronous buck converter at 300 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling energy transfer into output inductor; driven by gate driver IC.

Use Value: 50 ns fall time and 40 pF Cob minimize switching loss and EMI generation; DPAK thermal interface sustains 20 W dissipation at T_C = 25°C.

Inverter Half-Bridge

Industrial Motor Control

Use Scenario: Upper-leg switch in 200 V DC-link H-bridge driving 100 W BLDC motor.

IC Role / Device Role / Timing Role: NPN high-side switch with bootstrap gate drive; requires low storage time to avoid shoot-through.

Use Value: t_stg = 900 ns and fast t_f allow safe 1 μs dead time; h_FE stability ensures consistent base current across temperature.

Use Scenario: Current-sense amplifier front-end transistor in overcurrent protection circuit for 3-phase VFD.

IC Role / Device Role / Timing Role: Precision current mirror reference transistor biased at 0.5 A with matched h_FE.

Use Value: Tight h_FE spread (140–400) and linearity between 0.5 A and 3 A enable ±2% current replication accuracy across unit-to-unit variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = −100 V, I_C = −8 A, V_CE(sat) = −1.5 V @ 4 A - higher saturation voltage, larger die	Higher power handling but 3.7× higher conduction loss at 2 A; suited for lower-frequency, higher-current rails	Select when P_C > 20 W is required and layout allows TO-252-2 footprint
SSD10N60B	N-channel MOSFET (600 V, 10 A); R_DS(on) = 0.7 Ω - no gate current, but slower t_f (120 ns) and higher Q_g	Replaces BJT where gate drive simplicity and zero base current are prioritized over switching speed	Choose for 100–500 kHz flyback or PFC where V_GS drive is available and 50 ns t_f is non-critical

Compared with MJD127G and SSD10N60B, 2SD1816S-TL-HQ delivers optimal balance of low V_CE(sat), sub-100 ns switching, and DPAK thermal efficiency for 2–4 A, 100–500 kHz switching nodes - especially where base drive capability and cost-sensitive discrete solutions are required.

Availability

2SD1816S-TL-HQ is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and industrial motor control systems requiring stable component supply, halogen-free compliance, and Pb-free RoHS processing.

Supply support for 2SD1816S-TL-HQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

2SD1816S-TL-HQ belongs to the legacy general-purpose bipolar transistor product line, designed specifically for high-reliability, medium-voltage, high-current switching in industrial power conversion and electromechanical control.

FAQ

What is the maximum continuous collector current rating for 2SD1816S-TL-HQ?

The 2SD1816S-TL-HQ is rated for −4 A continuous collector current (I_C) at T_C = 25°C. Derating applies above this case temperature; the absolute maximum pulsed current is −8 A (I_CP). This rating assumes proper PCB copper area and thermal vias per the DPAK footprint in the datasheet. Operation at full −4 A requires heatsinking or forced airflow to maintain junction temperature below 150°C.

Does 2SD1816S-TL-HQ have a documented h_FE range at high current?

Yes - the 2SD1816S-TL-HQ specifies h_FE2 ≥40 at V_CE = −5 V and I_C = −3 A. This ensures predictable base drive requirements under heavy load, distinguishing it from general-purpose transistors that only guarantee h_FE at low currents. The h_FE binning (S/T rank) further guarantees minimum gain consistency across production lots.

Is the DPAK package of 2SD1816S-TL-HQ thermally enhanced?

Yes - the DPAK (TP-FA) package used by 2SD1816S-TL-HQ features an exposed collector pad (pins 2 and 4) that serves as the primary thermal path. With proper PCB layout (≥10 cm² 2-oz copper, 6+ thermal vias), it achieves P_C = 20 W at T_C = 25°C. This is significantly higher than standard SOT-223 or TO-92 packages and enables direct mounting to heatsinks or thermal planes in compact power modules.

Can 2SD1816S-TL-HQ be used as a direct replacement for 2SD1816S-TL-E?

Yes - 2SD1816S-TL-HQ and 2SD1816S-TL-E share identical electrical specifications, pinout, and DPAK package. The "HQ" suffix denotes halogen-free + Pb-free compliance (per J-STD-609 Class 1), while "E" indicates Pb-free only. No layout or schematic changes are needed; both meet RoHS, but HQ adds halogen-free certification required for certain industrial and automotive end markets.

What is the typical Cob value of 2SD1816S-TL-HQ and why does it matter?

The typical output capacitance (Cob) of 2SD1816S-TL-HQ is 40 pF at V_CB = −10 V and f = 1 MHz. This low value directly impacts switching speed: it reduces Miller charging time, enabling the measured 50 ns fall time. In high-frequency converters (>200 kHz), Cob dominates turn-off delay - so 40 pF versus >100 pF in older transistors cuts dynamic loss by ~30% and eases EMI filter design.

2SD1816S-TL-HQ Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: 2SD1816

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK/TP-FA

2SD1816S-TL-HQ FAQ

1.How can I place an order for 2SD1816S-TL-HQ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1816S-TL-HQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1816S-TL-HQ reliable?

The price and inventory of 2SD1816S-TL-HQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1816S-TL-HQ is usually 5 days.

3.What payment methods are accepted for 2SD1816S-TL-HQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1816S-TL-HQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1816S-TL-HQ?

2SD1816S-TL-HQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1816S-TL-HQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1816S-TL-HQ?

For technical support, including 2SD1816S-TL-HQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1816S-TL-HQ requirements.

6.How does Aetrix verify that 2SD1816S-TL-HQ is sourced from the original manufacturer or authorized distributors?

All 2SD1816S-TL-HQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1816S-TL-HQ meets industry standards.

7.What is the process for return or replacement of 2SD1816S-TL-HQ?

All 2SD1816S-TL-HQ units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1816S-TL-HQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1816S-TL-HQ part is unused and in its original packaging.

Return procedure for 2SD1816S-TL-HQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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