onsemi 2SD1816T-E

Overview

2SD1816T-E from onsemi is an NPN bipolar junction transistor rated for −100 V V_CEO, −4 A I_C, and 1 W P_C at T_c = 25°C, featuring low V_CE(sat) of −150 mV (typ) at I_C = −2 A / I_B = −0.2 A, f_T = 180 MHz (typ), and DPAK (TP-FA) surface-mount package. It serves as a high-current switching device in DC-DC converters and relay drivers.

For engineers reviewing the 2SD1816T-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance under pulsed 2 A load, h_FE linearity across 0.5–3 A, Cob = 40 pF (max), fast switching (t_on = 100 ns, t_f = 50 ns), and Pb-free DPAK thermal capability up to 20 W at T_c = 25°C.

Technical Context

The 2SD1816T-E operates as a general-purpose NPN power switch with complementary pairing to 2SB1216T-E (PNP). Its design emphasizes low saturation voltage and high gain-bandwidth for efficient hard-switching in medium-frequency (<200 kHz) power stages.

It uses epitaxial planar die construction with emitter ballasting for current sharing, supports continuous I_C = −4 A and pulsed I_CP = −8 A, and maintains h_FE ≥ 40 at I_C = −3 A - enabling stable base drive design without active current limiting in inverter half-bridges.

Key Specifications

Pinout & Package

DPAK (TP-FA) package - surface-mount, 4-pin, single-ended power transistor layout with dual collector terminals (pins 2 and 4) for reduced lead inductance and improved current sharing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Compared with MJD127G and SSD10N60B, the 2SD1816T-E delivers superior V_CE(sat) and faster switching for 2–4 A, <100 V applications, while retaining direct TTL/CMOS base drive compatibility - making it optimal for space-constrained, medium-frequency power stages where thermal and drive simplicity are prioritized.

Availability

2SD1816T-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control outputs requiring stable component supply, RoHS-compliant packaging, and consistent parametric performance across production lots.

Supply support for 2SD1816T-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SD1816T-E belongs to onsemi's general-purpose bipolar power transistor family, engineered for high-reliability, medium-voltage switching in cost-sensitive power conversion and electromechanical interface circuits.

FAQ

What is the maximum continuous collector current rating for the 2SD1816T-E?

The 2SD1816T-E is rated for −4 A continuous collector current (I_C) at case temperature T_c = 25°C. This rating assumes adequate PCB copper area or heatsinking; derating applies above 25°C case temperature, with junction-to-case thermal resistance R_θJC = 1.25°C/W (DPAK package). At T_c = 70°C, max I_C drops to approximately −2.8 A to maintain T_j ≤ 150°C. The 2SD1816T-E datasheet specifies this limit in the Absolute Maximum Ratings table.

Does the 2SD1816T-E have a built-in protection diode?

No, the 2SD1816T-E is a discrete NPN bipolar transistor without integrated protection features such as clamping diodes, thermal shutdown, or overcurrent sensing. External flyback diodes must be added across inductive loads, and base-emitter resistors or Zener clamps may be needed for voltage transients. This is consistent with standard BJT behavior documented in the 2SD1816T-E datasheet's Electrical Characteristics and Application Information sections.

What is the pin configuration of the 2SD1816T-E in its DPAK (TP-FA) package?

The 2SD1816T-E uses a 4-pin DPAK (TP-FA) package with pin 1 = Base, pin 2 = Collector, pin 3 = Emitter, and pin 4 = Collector (internally connected to pin 2). This dual-collector layout reduces effective lead inductance and improves current sharing. The pinout is confirmed in the "ELECTRICAL CONNECTION" diagram and "PACKAGE DIMENSIONS" section of the official 2SD1816T-E datasheet (Order Number: 2SB1216_2SD1816/D).

Can the 2SD1816T-E replace the 2SD1816S-E in a design?

Yes, the 2SD1816T-E can replace the 2SD1816S-E in most applications because both share identical electrical specifications, DPAK (TP-FA) package, and Pb-free construction. The only difference is packaging format: 2SD1816S-E ships in 700-unit tape-and-reel, while 2SD1816T-E is supplied in bulk (500/unit bag). No circuit or layout changes are needed, and the 2SD1816T-E maintains the same h_FE rank ('T' = 200–400 at I_C = −0.5 A) as specified in the 2SD1816T-E datasheet.

What is the typical gain-bandwidth product (f_T) of the 2SD1816T-E and how does it affect switching performance?

The 2SD1816T-E has a typical f_T of 180 MHz at V_CE = −10 V and I_C = −0.5 A. This high f_T ensures sufficient current gain at frequencies up to ~10–20 MHz, supporting clean base drive response and minimal phase shift in high-speed switching applications like 200 kHz DC-DC converters. It directly contributes to the 2SD1816T-E's fast t_on = 100 ns and t_f = 50 ns, as verified in the datasheet's Switching Time Test Circuit (Figure 1).