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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1816T-TL-E

Name: 2SD1816T-TL-E
Brand: onsemi
SKU: 2SD1816T-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1816T-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SD1816T-TL-E.pdf

Description:: TRANS NPN 100V 4A TP-FA

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Product details

Overview

2SD1816T-TL-E from onsemi is an NPN bipolar junction transistor rated for −100 V V_CEO, −4 A I_C, with low V_CE(sat) of −400 mV at −2 A/−0.2 A, f_T = 180 MHz, and housed in a Pb-free DPAK (TP-FA) package. It serves as a high-current switching device in power converters and relay drivers.

For engineers reviewing the 2SD1816T-TL-E datasheet, pinout, applications, or equivalent options, key selection factors include verified V_CE(sat) performance at 2 A drive, h_FE range (140–400), switching speed (t_on = 100 ns, t_f = 50 ns), and DPAK thermal capability (P_C = 20 W at T_c = 25°C).

Technical Context

This NPN transistor operates in linear and saturated switching modes, with DC current gain specified at two bias points: h_FE1 = 140–400 at −0.5 A and h_FE2 = 40 min at −3 A, supporting both signal amplification and robust switching. Its f_T of 180 MHz and low Cob (40 pF) enable stable high-frequency operation in inverters and SMPS stages.

V_CE(sat) is characterized under −2 A collector current with −0.2 A base drive, confirming low conduction loss; V_BE(sat) = −0.9 to −1.2 V ensures predictable base drive requirements. The device meets industrial temperature limits (T_j = 150°C, T_stg = −55 to +150°C) and features dual-collector configuration for enhanced thermal dissipation in DPAK.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating voltage in high-side switch or inverter half-bridge applications.
I_C	−4 A - Continuous DC collector current rating; supports sustained 4 A load switching without derating at T_c = 25°C.
V_CE(sat)	−400 mV max at I_C = −2 A, I_B = −0.2 A - Low saturation voltage minimizes power loss (0.8 W max at 2 A), critical for thermally constrained converter designs.
f_T	180 MHz - Gain-bandwidth product enabling stable small-signal amplification or fast switching up to ~10–20 MHz practical circuits.
h_FE	140–400 at I_C = −0.5 A - Wide DC gain range allows flexible base drive design; retains h_FE ≥ 40 even at I_C = −3 A for high-current saturation.
t_f	50 ns - Fast fall time enables efficient PWM operation above 1 MHz in resonant or hard-switched topologies.
P_C (T_c = 25°C)	20 W - High power dissipation capability in DPAK package when mounted on heatsink; enables high-current pulse handling without thermal runaway.

Pinout & Package

The 2SD1816T-TL-E is housed in a surface-mount DPAK (TP-FA) package (Case 369AH), featuring a copper leadframe, Pb-free finish, and dual-collector terminals (pins 2 and 4) for improved thermal and current-handling performance.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires −0.2 A base current to saturate at −2 A collector current; V_BE(sat) = −0.9 to −1.2 V defines driver voltage compliance.
2	Collector	Main high-current output node; electrically tied to pin 4; used for PCB thermal pad connection and primary current path in switching loads.
3	Emitter	Reference terminal for bias and load return; connected internally to substrate; must be routed with low-inductance path in high-dI/dt applications.
4	Collector	Second collector terminal, identical to pin 2; provides redundant current path and doubles thermal interface area to heatsink or copper pour.

Key Features

Feature	Design Value
Low V_CE(sat)	−400 mV max at −2 A ensures <0.8 W conduction loss, reducing heatsink size in 24 V/48 V DC-DC modules.
Dual-collector DPAK	Pins 2 and 4 both connect to collector, doubling thermal interface area and lowering R_θJC for 20 W dissipation at T_c = 25°C.
High f_T	180 MHz supports clean square-wave switching in >500 kHz SMPS and Class-D amplifier output stages.
Stable h_FE linearity	h_FE remains ≥40 at −3 A, enabling predictable base drive scaling across full load range in motor drivers.
Fast switching	t_on = 100 ns, t_f = 50 ns, and t_stg = 900 ns allow efficient operation in 1–2 MHz resonant converters with minimal dead-time penalty.

Applications

Relay Drivers	High-Speed Inverters
Use Scenario: Driving electromagnetic relays in PLC I/O modules requiring 2–4 A coil current at 24–48 V DC. IC Role / Device Role / Timing Role: NPN switch providing low-loss, high-gain current amplification to energize relay coils with microcontroller GPIO-level base drive. Use Value: V_CE(sat) ≤ −400 mV ensures <1 W coil-side loss at 4 A, preventing relay contact welding and extending mechanical life.	Use Scenario: Half-bridge output stage in 10–20 kHz UPS inverters converting 350 V DC bus to 120/230 V AC. IC Role / Device Role / Timing Role: High-current NPN switch in totem-pole or complementary pair configuration, synchronized via gate driver with precise timing control. Use Value: 50 ns fall time and 180 MHz f_T support clean zero-voltage switching transitions, minimizing EMI and MOSFET body-diode stress.
DC-DC Converters	Industrial Motor Control
Use Scenario: Primary-side switch in non-isolated buck or forward converters delivering 3–5 A at 5–12 V output from 24–48 V input. IC Role / Device Role / Timing Role: Main power switch operating in hard-switched PWM mode at 200–500 kHz, controlled by dedicated controller IC. Use Value: 20 W thermal rating in DPAK allows continuous 4 A operation with minimal heatsinking, reducing BOM cost vs. TO-220 alternatives.	Use Scenario: H-bridge leg in 24 V brushed DC motor drivers for factory automation actuators drawing up to 3.5 A peak. IC Role / Device Role / Timing Role: Saturated NPN switch controlling motor direction and braking, driven by logic-level PWM with active freewheeling. Use Value: h_FE ≥ 40 at −3 A guarantees reliable saturation with standard 5 V MCU outputs, eliminating need for external Darlington stages.

Relay Drivers

High-Speed Inverters

Use Scenario: Driving electromagnetic relays in PLC I/O modules requiring 2–4 A coil current at 24–48 V DC.

IC Role / Device Role / Timing Role: NPN switch providing low-loss, high-gain current amplification to energize relay coils with microcontroller GPIO-level base drive.

Use Value: V_CE(sat) ≤ −400 mV ensures <1 W coil-side loss at 4 A, preventing relay contact welding and extending mechanical life.

Use Scenario: Half-bridge output stage in 10–20 kHz UPS inverters converting 350 V DC bus to 120/230 V AC.

IC Role / Device Role / Timing Role: High-current NPN switch in totem-pole or complementary pair configuration, synchronized via gate driver with precise timing control.

Use Value: 50 ns fall time and 180 MHz f_T support clean zero-voltage switching transitions, minimizing EMI and MOSFET body-diode stress.

DC-DC Converters

Industrial Motor Control

Use Scenario: Primary-side switch in non-isolated buck or forward converters delivering 3–5 A at 5–12 V output from 24–48 V input.

IC Role / Device Role / Timing Role: Main power switch operating in hard-switched PWM mode at 200–500 kHz, controlled by dedicated controller IC.

Use Value: 20 W thermal rating in DPAK allows continuous 4 A operation with minimal heatsinking, reducing BOM cost vs. TO-220 alternatives.

Use Scenario: H-bridge leg in 24 V brushed DC motor drivers for factory automation actuators drawing up to 3.5 A peak.

IC Role / Device Role / Timing Role: Saturated NPN switch controlling motor direction and braking, driven by logic-level PWM with active freewheeling.

Use Value: h_FE ≥ 40 at −3 A guarantees reliable saturation with standard 5 V MCU outputs, eliminating need for external Darlington stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = −100 V, I_C = −4 A, but V_CE(sat) = −750 mV @ −2 A - 87% higher conduction loss than 2SD1816T-TL-E.	Higher thermal load in compact converters; requires larger heatsink or derating below 3 A continuous.	Prefer 2SD1816T-TL-E where low V_CE(sat) and thermal efficiency are prioritized over legacy footprint compatibility.
SS8050DTA	I_C = −1.5 A only, V_CE(sat) = −300 mV @ −0.5 A - insufficient current rating for 4 A relay or motor loads.	Limited to low-power signal switching; not suitable for main power stage use.	Select 2SD1816T-TL-E for any application demanding ≥3 A continuous collector current with low-loss saturation.

Compared with MJD127G and SS8050DTA, the 2SD1816T-TL-E delivers superior thermal efficiency at high current due to its −400 mV V_CE(sat) and 20 W DPAK power rating, while maintaining compatible pinout and drive requirements for drop-in replacement in existing DPAK-based layouts designed for 4 A switching.

Availability

2SD1816T-TL-E is available at Aetrix Electronics and suitable for relay drivers, high-speed inverters, and DC-DC converters requiring stable component supply, RoHS-compliant packaging, and consistent parametric performance across production lots.

Supply support for 2SD1816T-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SD1816T-TL-E belongs to onsemi's general-purpose bipolar power transistor family, engineered specifically for high-current, high-speed switching in space-constrained industrial power systems.

FAQ

What is the maximum continuous collector current rating for the 2SD1816T-TL-E?

The 2SD1816T-TL-E is rated for −4 A continuous collector current (I_C) at case temperature T_c = 25°C. At elevated temperatures or without heatsinking, derating applies per the datasheet thermal curves. This rating is validated under DC conditions and supports sustained 4 A operation in properly heatsinked DPAK layouts.

Does the 2SD1816T-TL-E have a dual-collector configuration, and how does it affect layout?

Yes, the 2SD1816T-TL-E uses pins 2 and 4 as electrically connected collectors - a dual-collector DPAK structure. This design doubles the thermal interface area to the PCB copper pour or heatsink, directly lowering junction-to-case thermal resistance. Layout must connect both pins 2 and 4 to the same high-current, low-impedance power plane.

What is the guaranteed h_FE range for the 2SD1816T-TL-E at high current?

The 2SD1816T-TL-E guarantees h_FE ≥ 40 at V_CE = −5 V and I_C = −3 A (h_FE2). This ensures reliable saturation with modest base drive (e.g., −0.3 A) in high-current motor or relay applications, unlike many general-purpose transistors that degrade sharply above 1 A.

Is the 2SD1816T-TL-E suitable for switching frequencies above 500 kHz?

Yes - with f_T = 180 MHz, t_on = 100 ns, and t_f = 50 ns, the 2SD1816T-TL-E supports clean switching up to ~1–2 MHz in optimized layouts. However, practical frequency limits depend on drive strength, load inductance, and PCB parasitics; for >1 MHz, verify switching waveforms with calibrated gate/base drive.

What package variant does the "TL" suffix indicate in 2SD1816T-TL-E?

The "TL" suffix in 2SD1816T-TL-E denotes tape-and-reel packaging in the DPAK (TP-FA) outline, with 700 units per reel. This format is optimized for automated SMT assembly and ensures moisture-sensitive level (MSL) compliance per J-STD-020, with Pb-free termination and halogen-free option available as "-TL-H".

2SD1816T-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SD1816T-TL-E FAQ

1.How can I place an order for 2SD1816T-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1816T-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1816T-TL-E reliable?

The price and inventory of 2SD1816T-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1816T-TL-E is usually 5 days.

3.What payment methods are accepted for 2SD1816T-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1816T-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1816T-TL-E?

2SD1816T-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1816T-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1816T-TL-E?

For technical support, including 2SD1816T-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1816T-TL-E requirements.

6.How does Aetrix verify that 2SD1816T-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SD1816T-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1816T-TL-E meets industry standards.

7.What is the process for return or replacement of 2SD1816T-TL-E?

All 2SD1816T-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1816T-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1816T-TL-E part is unused and in its original packaging.

Return procedure for 2SD1816T-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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