onsemi 2SD1816T-TL-H

Overview

2SD1816T-TL-H from onsemi is an NPN bipolar junction transistor rated for −100 V V_CEO, −4 A I_C, and 20 W P_C at T_c = 25°C, featuring low V_CE(sat) of −400 mV (max) at I_C = −2 A / I_B = −0.2 A, f_T = 180 MHz, and DPAK/TP-FA package. It serves as a high-current switching device in DC-DC converters and relay drivers.

For engineers reviewing the 2SD1816T-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat), h_FE linearity across I_C = 0.5–3 A, switching time (t_on = 100 ns, t_f = 50 ns), thermal performance in DPAK, and Pb-free/halogen-free compliance per ordering code.

Technical Context

This NPN transistor operates with a V_(BR)CEO of −100 V and V_(BR)CBO of −120 V, supporting high-voltage switching while maintaining safe margin against breakdown. Its h_FE ranges from 140–400 (rank-dependent), with stable gain at both I_C = −0.5 A (h_FE1) and I_C = −3 A (h_FE2 ≥ 40), enabling predictable current amplification across load conditions.

The device delivers fast switching via t_on = 100 ns, t_stg = 900 ns, and t_f = 50 ns under defined test circuit conditions, and achieves high-frequency response with f_T = 180 MHz at V_CE = −10 V / I_C = −0.5 A - suitable for inverters and SMPS operating up to several hundred kHz.

Key Specifications

Pinout & Package

2SD1816T-TL-H uses the DPAK / TP-FA package (Case 369AH), a surface-mount power package with exposed drain pad for thermal enhancement. Pin configuration is standardized: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current NPN switching applications.

Compared with MJD127G and SSP15N10DH3, the 2SD1816T-TL-H offers superior V_CE(sat) and proven BJT linearity for analog-current-control schemes, while maintaining compatibility with legacy BJT driver ICs and simpler bias networks than MOSFET alternatives.

Availability

2SD1816T-TL-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control H-bridge legs requiring stable component supply, Pb-free/halogen-free compliance, and DPAK thermal performance.

Supply support for 2SD1816T-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SD1816T-TL-H belongs to onsemi's general-purpose power bipolar transistor family, designed specifically for high-current, medium-voltage switching in cost-sensitive industrial power systems where BJT simplicity and ruggedness are preferred over MOSFET gate drive complexity.

FAQ

What is the maximum continuous collector current rating for the 2SD1816T-TL-H?

The 2SD1816T-TL-H is rated for −4 A continuous collector current (I_C) at case temperature T_c = 25°C. Derating is required above this temperature - for example, at T_c = 100°C, the usable I_C drops to approximately −2.5 A based on its 20 W P_C rating and thermal resistance profile. This rating assumes proper PCB copper area and thermal vias under the DPAK exposed pad.

Does the 2SD1816T-TL-H have a dual-collector configuration, and how is it implemented?

Yes, the 2SD1816T-TL-H features a dual-collector configuration: Pins 2 and 4 are internally connected to the collector node. This design reduces current density per bond wire and improves thermal spreading across the DPAK package. In layout, both pins must be routed to the same high-current net - typically the input rail or transformer primary - to fully utilize the enhanced thermal and current-handling capability.

What is the guaranteed minimum h_FE at high current for the 2SD1816T-TL-H?

The 2SD1816T-TL-H guarantees h_FE ≥ 40 at V_CE = −5 V and I_C = −3 A (h_FE2). This ensures predictable current amplification even near maximum rated current, supporting reliable saturation in high-load switching applications such as motor drivers and inverters where gain collapse could cause thermal runaway.

Is the 2SD1816T-TL-H RoHS-compliant and halogen-free?

Yes, the "-H" suffix in 2SD1816T-TL-H explicitly denotes compliance with both RoHS Directive 2011/65/EU and halogen-free requirements (≤900 ppm bromine, ≤900 ppm chlorine, total halogens ≤1500 ppm). This makes the 2SD1816T-TL-H suitable for environmentally regulated industrial and consumer products requiring full material declaration.

What is the recommended soldering footprint for the 2SD1816T-TL-H?

The official recommended soldering footprint for the 2SD1816T-TL-H is defined in Case 369AH (DPAK/TP-FA) documentation: 7.0 mm × 6.2 mm overall outline, with 2.3 mm pad width for Pins 1–3 and 2.5 mm for Pin 4, plus a 7.0 mm × 4.0 mm thermal pad centered beneath the package. Use IPC-7351B Level B for optimal reflow yield and thermal reliability.