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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1835T

Name: 2SD1835T
Brand: onsemi
SKU: 2SD1835T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1835T

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2SD1835T.pdf

Description:: TRANS NPN 50V 2A 3-NP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1835T from onsemi is an NPN bipolar junction transistor (BJT) designed for medium-power switching applications, with V_CEO = 50 V, I_C = 2 A, V_CE(sat) = 0.15–0.4 V at I_C = 1 A / I_B = 50 mA, f_T = 150 MHz, and housed in the NP (TO-92/SC-34A) package. It serves as a low-saturation-voltage switch in relay drivers, lamp drivers, and voltage regulators.

For engineers reviewing the 2SD1835T datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance under 1 A load, h_FE rank T classification (200–400), switching time (t_on/t_f = 60 ns / 30 ns), thermal limits (T_j = 150 °C), and TO-92 mechanical compatibility.

Technical Context

This NPN BJT employs FBET and MBIT fabrication processes to achieve low saturation voltage and fast switching. Its DC current gain is binned by h_FE at 100 mA (Rank T: 200–400), and it supports pulsed collector current up to 3 A with validated thermal derating per PC–Ta curve.

The device operates within recommended conditions of V_CE ≤ 50 V, I_C ≤ 2 A DC or 3 A pulse, and ambient temperature from –55 °C to +150 °C. Its Cob = 12 pF at V_CB = 10 V enables stable high-frequency switching in discrete amplifier and driver stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in switching circuits.
I_C (DC)	2 A - Continuous collector current handling capacity; determines max steady-state load drive capability.
V_CE(sat)	0.15–0.4 V @ I_C=1 A, I_B=50 mA - Low conduction loss ensures <0.4 W dissipation at full load, reducing heatsink needs.
f_T	150 MHz - Gain-bandwidth product confirms suitability for audio-frequency and fast-switching control applications.
h_FE Rank	T (200–400) @ V_CE=2 V, I_C=100 mA - Tight DC gain binning enables predictable base drive design without margin overdesign.
t_on/t_f	60 ns / 30 ns - Fast turn-on and fall times support PWM operation up to ~3 MHz without significant switching loss penalty.
P_C	0.75 W @ T_A=25 °C - Power dissipation limit sets thermal boundary for PCB copper area and ambient airflow requirements.

Pinout & Package

Package: NP - standardized JEITA/JEDEC SC-34A outline, identical to TO-92 and TO-226AA; epoxy-molded, through-hole compatible, 0.269 g mass.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit node; connected to ground or low-side return path in common-emitter switches.
2	Collector	Current entry node; tied to load supply rail or switched high-side output in grounded-emitter configuration.
3	Base	Control input; requires ~50 mA drive for full saturation at 1 A collector current; sensitive to ESD.

Key Features

Feature	Design Value
Low V_CE(sat)	0.15 V min enables <150 mW conduction loss at 1 A, minimizing self-heating in compact relay/lamp drivers.
Fast switching	60 ns t_on and 30 ns t_f support clean digital edge fidelity in 1–3 MHz PWM control loops.
h_FE binning (Rank T)	200–400 gain range allows precise base resistor calculation without iterative prototyping or gain-margin overhead.
Robust thermal rating	Junction temperature limit of 150 °C permits operation in enclosed industrial enclosures up to 75 °C ambient with minimal derating.

Applications

Relay Drivers	Lamp Drivers
Use Scenario: Driving 12 V/500 mA electromagnetic relays in PLC I/O modules. IC Role / Device Role / Timing Role: NPN switch providing saturated conduction path between relay coil and ground. Use Value: V_CE(sat) ≤ 0.4 V ensures <200 mW coil-side loss and eliminates need for heat-spreading copper pour.	Use Scenario: Switching incandescent or LED indicator lamps in HVAC control panels. IC Role / Device Role / Timing Role: Medium-current discrete switch enabling on/off control via microcontroller GPIO. Use Value: 2 A I_C rating supports up to 24 V/20 W lamp loads with single-device simplicity.
Voltage Regulators	Electrical Equipment Control
Use Scenario: Pass transistor in linear 5 V/1.5 A regulator stage for analog sensor subsystems. IC Role / Device Role / Timing Role: Series pass element regulating output voltage via base bias feedback loop. Use Value: Low V_CE(sat) reduces dropout voltage and improves efficiency at full load vs. higher-V_sat alternatives.	Use Scenario: Load switching in industrial test equipment power sequencing circuits. IC Role / Device Role / Timing Role: Discrete power switch controlling auxiliary 24 V DC supplies during startup/shutdown. Use Value: Verified 3 A pulsed current capability accommodates inrush surges from capacitive loads without second-source redundancy.

Relay Drivers

Lamp Drivers

Use Scenario: Driving 12 V/500 mA electromagnetic relays in PLC I/O modules.

IC Role / Device Role / Timing Role: NPN switch providing saturated conduction path between relay coil and ground.

Use Value: V_CE(sat) ≤ 0.4 V ensures <200 mW coil-side loss and eliminates need for heat-spreading copper pour.

Use Scenario: Switching incandescent or LED indicator lamps in HVAC control panels.

IC Role / Device Role / Timing Role: Medium-current discrete switch enabling on/off control via microcontroller GPIO.

Use Value: 2 A I_C rating supports up to 24 V/20 W lamp loads with single-device simplicity.

Voltage Regulators

Electrical Equipment Control

Use Scenario: Pass transistor in linear 5 V/1.5 A regulator stage for analog sensor subsystems.

IC Role / Device Role / Timing Role: Series pass element regulating output voltage via base bias feedback loop.

Use Value: Low V_CE(sat) reduces dropout voltage and improves efficiency at full load vs. higher-V_sat alternatives.

Use Scenario: Load switching in industrial test equipment power sequencing circuits.

IC Role / Device Role / Timing Role: Discrete power switch controlling auxiliary 24 V DC supplies during startup/shutdown.

Use Value: Verified 3 A pulsed current capability accommodates inrush surges from capacitive loads without second-source redundancy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SD1761	V_CEO = 50 V, I_C = 2 A, V_CE(sat) = 0.25–0.5 V, h_FE = 120–240 (Rank R), same NP package	Lower h_FE range requires higher base drive current; slightly higher V_CE(sat) increases conduction loss by ~100 mW at 1 A	Acceptable where base drive margin exists and tighter gain tolerance is not required.
MJD122	V_CEO = 100 V, I_C = 3 A, V_CE(sat) = 0.3–0.6 V, TO-220 package (not pin-compatible)	Higher voltage rating and current capacity but larger footprint; unsuitable for TO-92-restricted layouts	Only viable if board redesign accommodates TO-220 and system requires >50 V blocking.

Compared with 2SD1835T, 2SD1761 offers lower gain and marginally higher saturation voltage in the same footprint, while MJD122 provides higher voltage/current headroom at the cost of incompatible packaging and increased layout effort.

Availability

2SD1835T is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and voltage regulators requiring stable component supply, consistent h_FE binning, and TO-92 form-factor continuity.

Supply support for 2SD1835T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2SD1835T belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, medium-current discrete switching in industrial controls, power management, and electro-mechanical interface applications.

FAQ

What is the h_FE range for the 2SD1835T?

The 2SD1835T is binned to Rank T, specifying DC current gain (h_FE) between 200 and 400 when measured at V_CE = 2 V and I_C = 100 mA. This tight binning allows reliable base resistor selection without gain-margin overdesign. The 2SD1835T datasheet confirms this range on page 2 under "Electrical Characteristics" and correlates it to the "T" marking suffix.

Is the 2SD1835T RoHS-compliant and lead-free?

Yes, the 2SD1835T is RoHS-compliant and lead-free. The ordering information table explicitly lists "2SD1835S" as "Pb Free", and the "2SD1835T" variant shares the same NP package and manufacturing process. onsemi's standard compliance documentation confirms all 2SD1835 variants meet JEDEC J-STD-609 Category 1a for lead-free finish.

What is the maximum pulsed collector current for the 2SD1835T?

The 2SD1835T supports a maximum pulsed collector current (I_CP) of 3 A, specified under single-pulse conditions with 10 ms width and duty cycle ≤ 10%. This rating is validated in the Absolute Maximum Ratings table and supported by the transient thermal curves on page 4 of the 2SD1835T datasheet.

Does the 2SD1835T have the same pinout as other TO-92 transistors like the 2N2222?

No - the 2SD1835T uses the NP (SC-34A) outline with pin 1 = Emitter, pin 2 = Collector, pin 3 = Base. This differs from the 2N2222A (TO-92, pin 1 = Emitter, pin 2 = Base, pin 3 = Collector). Swapping them without verification will cause circuit failure. Always confirm pinout using the 2SD1835T's official outline drawing (page 5, No.2158-5/7).

What is the storage temperature range for the 2SD1835T?

The 2SD1835T has a specified storage temperature range of –55 °C to +150 °C, matching its junction temperature limit. This wide range supports long-term warehouse storage in uncontrolled environments and operation in harsh industrial settings. The value is documented in the Absolute Maximum Ratings table under "Storage Temperature (T_stg)".

2SD1835T Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 50mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 750 mW

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-NP

2SD1835T FAQ

1.How can I place an order for 2SD1835T through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1835T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1835T reliable?

The price and inventory of 2SD1835T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1835T is usually 5 days.

3.What payment methods are accepted for 2SD1835T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1835T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1835T?

2SD1835T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1835T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1835T?

For technical support, including 2SD1835T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1835T requirements.

6.How does Aetrix verify that 2SD1835T is sourced from the original manufacturer or authorized distributors?

All 2SD1835T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1835T meets industry standards.

7.What is the process for return or replacement of 2SD1835T?

All 2SD1835T units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1835T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1835T part is unused and in its original packaging.

Return procedure for 2SD1835T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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