onsemi 2SD1841Q

Overview

2SD1841Q from SANYO Semiconductor is an NPN triple-diffused planar silicon power transistor rated for 100 V V_CEO, 25 A continuous collector current, and 120 W collector dissipation at T_c = 25°C, designed for high-current switching in motor drivers, relay drivers, and DC-DC converters.

For engineers reviewing the 2SD1841Q datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE range (70–140 at I_C = 2.5 A), low V_CE(sat) of 0.8 V at I_C = 10 A / I_B = 1 A, wide ASO, and TO-3PB package thermal performance.

Technical Context

This device operates as a high-gain, high-current NPN switch with DC current gain h_FE specified in two test conditions: min 70–140 at V_CE = 2 V, I_C = 2.5 A (Rank Q), and min 20 at V_CE = 2 V, I_C = 10 A. It features low saturation voltages-V_CE(sat) ≤ 0.8 V and V_BE(sat) ≤ 1.5 V under I_C/I_B = 10.

Its ruggedness is defined by absolute maximum ratings including V_CBO = 110 V, V_CEO = 100 V, V_EBO = 6 V, and pulsed collector current I_CP = 40 A. Junction temperature is rated to 150°C, with storage range from –55°C to +150°C.

Key Specifications

Pinout & Package

SANYO TO-3PB metal package: isolated collector tab, 3-pin through-hole configuration with 15.0 mm × 20.0 mm footprint, 4.8 mm height, and integral mounting hole for mechanical and thermal attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2SD1841P and MJ15024G, the 2SD1841Q offers superior h_FE consistency for stable base drive design at moderate currents, while retaining the TO-3PB's isolated collector advantage over MJ15024G-critical for grounded-emitter configurations without additional insulation.

Availability

2SD1841Q is available at Aetrix Electronics and suitable for motor drivers, relay drivers, and DC-DC converters requiring stable component supply, long-term industrial availability, and traceable sourcing.

Supply support for 2SD1841Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2012.

The 2SD1841Q belongs to SANYO's high-current NPN transistor product line, engineered for rugged industrial switching applications demanding high ASO, low saturation loss, and thermal reliability in TO-3PB packages.

FAQ

What is the guaranteed h_FE range for 2SD1841Q?

The 2SD1841Q is binned to Rank Q, guaranteeing DC current gain h_FE between 70 and 140 when measured at V_CE = 2 V and I_C = 2.5 A. This tighter specification than Rank P (50–100) provides more predictable base drive requirements in production designs using the 2SD1841Q.

Is the collector of 2SD1841Q electrically isolated in the TO-3PB package?

Yes-the 2SD1841Q uses SANYO's TO-3PB package, which features an electrically isolated collector tab. This allows direct mounting to a grounded heatsink without requiring insulating washers, simplifying thermal design in low-side switch configurations where the emitter is referenced to ground.

What is the maximum pulsed collector current rating for 2SD1841Q?

The 2SD1841Q is rated for I_CP = 40 A under pulsed conditions, as specified in the Absolute Maximum Ratings table. This rating applies to short-duration pulses (e.g., 10 ms or less) with appropriate duty cycle derating, and is validated within the Forward Bias ASO curve in the datasheet.

Can 2SD1841Q replace 2SD1841P in existing designs?

Yes-2SD1841Q is a direct drop-in replacement for 2SD1841P in terms of pinout, package, voltage/current ratings, and thermal specs. The only difference is the h_FE bin: 2SD1841Q offers higher minimum gain (70 vs. 50), which may improve saturation margin but does not require circuit modification.

What is the recommended base drive current to fully saturate 2SD1841Q at 10 A collector current?

To ensure full saturation at I_C = 10 A, the datasheet specifies V_CE(sat) ≤ 0.8 V with I_B = 1 A (i.e., I_C/I_B = 10). Therefore, 1 A base current is the validated drive level for reliable low-loss switching of the 2SD1841Q under that condition.