onsemi 2SD1913S

Overview

2SD1913S from SANYO is an NPN epitaxial planar silicon power transistor in TO-220ML package, rated for 60 V V_CEO, 3 A I_C, and 20 W P_C at T_c=25°C, with low V_CE(sat) of −0.4 V (typ) at I_C=−2 A / I_B=−0.2 A, used in low-frequency power amplifier stages.

For engineers reviewing the 2SD1913S datasheet, pinout, applications, or equivalent options, key selection criteria include its 60 V breakdown rating, 100 MHz f_T, micaless TO-220ML thermal design, h_FE range of 140–280 at I_C=0.5 A, and suitability for linear audio output and DC motor drive circuits.

Technical Context

The 2SD1913S operates as a general-purpose NPN power switching and amplification device with fixed-polarity junction structure, optimized for low-saturation operation in Class-A/AB amplifier output stages and relay/motor driver interfaces. Its MBIT process enables wide Safe Operating Area (SOA) compliance up to 8 A pulse current under defined voltage conditions.

It features a single-planar epitaxial construction with integrated thermal path via the collector tab, supporting direct heatsink mounting without mica insulation. Electrical behavior is characterized by V_BE = −0.8 V (typ) at I_C = −0.5 A and h_FE2 ≥ 20 at I_C = −3 A, confirming stable gain under high-current bias.

Key Specifications

Pinout & Package

2SD1913S uses the SANYO TO-220ML package: insulated plastic body with metal collector tab (pin 2), no mica required, designed for direct heatsink mounting. Dimensions: 16.0 × 10.0 × 4.5 mm (L × W × H), tab thickness 1.6 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2SD1913S, 2SC5200 offers greater voltage/current headroom but requires layout changes and higher drive power, while MJE13009 trades audio-grade linearity for high-voltage switching robustness-neither is pin-compatible, but both serve adjacent power transistor niches.

Availability

2SD1913S is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, relay interfaces, and linear regulator pass elements requiring stable component supply and long-term industrial availability.

Supply support for 2SD1913S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and optoelectronic devices before its acquisition by ON Semiconductor in 2011; known for high-reliability discrete power transistors.

The 2SD1913S belongs to SANYO's low-frequency power amplifier transistor family, engineered for linear operation in audio output stages and industrial control interfaces where thermal stability and SOA integrity are critical.

FAQ

What is the maximum continuous collector current rating for the 2SD1913S?

The 2SD1913S has a maximum continuous collector current (I_C) rating of 3 A at T_a = 25°C. This rating assumes proper heatsinking and derates linearly above 25°C ambient; at T_c = 25°C, it supports up to 20 W dissipation. The 2SD1913S must not exceed this current in DC or average RMS operation to maintain reliability and avoid thermal runaway.

Does the 2SD1913S require a mica insulator when mounted to a heatsink?

No, the 2SD1913S uses SANYO's micaless TO-220ML package, where the collector tab is electrically isolated from the internal die by molded plastic. This eliminates the need for mica or silicone pads, reducing thermal resistance by approximately 0.5°C/W compared to standard TO-220. The 2SD1913S collector remains at the same potential as the heatsink unless external isolation is added.

What is the typical DC current gain (h_FE) of the 2SD1913S at 0.5 A collector current?

The 2SD1913S is binned into Rank S with a guaranteed h_FE range of 140–280 at V_CE = 5 V and I_C = 0.5 A. Typical value is ~200. This high and tightly distributed gain simplifies base bias network design and improves matching in push-pull amplifier pairs. The 2SD1913S maintains h_FE ≥ 20 even at I_C = 3 A, ensuring usable drive capability under full load.

Can the 2SD1913S be used in switching applications like PWM motor control?

Yes, the 2SD1913S supports switching operation with t_on/t_off in the hundreds of nanoseconds range and is rated for 8 A pulsed collector current (I_CP). However, its 100 MHz f_T and moderate storage time mean it is best suited for PWM frequencies below 50 kHz. For high-frequency SMPS, faster alternatives like MJD127 are preferred-but the 2SD1913S remains effective in 1–20 kHz motor drives where linear SOA and low saturation loss matter more than speed.

What is the Safe Operating Area (SOA) limit for the 2SD1913S at 30 V V_CE?

At V_CE = 30 V, the 2SD1913S SOA supports up to 8 A pulsed collector current for durations ≤ 10 ms, as confirmed by the SOA graph on page 4 of the datasheet (No.2246-4/4). This allows reliable handling of motor stall currents or audio clipping peaks without secondary breakdown. Continuous operation at 30 V is limited to ~1.5 A due to P_C = 20 W constraint. The 2SD1913S SOA curve is defined for single-pulse conditions with case temperature held at 25°C.