Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SD600KE

Part No.:
2SD600KE
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
Aetrix2SD600KE.pdf
Description:
TRANS NPN 120V 1A TO-126
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,700

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SD600KE from onsemi is an NPN epitaxial planar silicon power transistor in TO-126 package, rated for 100 V VCEO, 1 A IC, and 1 W PC at Tc = 25 °C, optimized for low-frequency power amplifier and switching applications in industrial control and audio output stages.

For engineers reviewing the 2SD600KE datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCEO = 100 V, hFE ≥ 60 at IC = −50 mA, VCE(sat) ≤ −0.4 V at IC = −500 mA / IB = −50 mA, and TO-126 thermal performance with mica insulator mounting compatibility.

Technical Context

This device operates as a medium-power NPN bipolar junction transistor with fixed-emitter configuration, supporting DC and pulsed operation up to 100 kHz. Its design emphasizes low saturation voltage and linear hFE response across IC = 10 mA to 500 mA, enabling stable Class-A/AB amplifier biasing and relay driver switching.

Thermal derating follows PC = 1 W at Tc = 25 °C, dropping to 0.6 W at Tc = 100 °C, requiring heatsink mounting per mica insulator guidelines. The 2SD600KE shares electrical specs and package with 2SD600K but differs in hFE binning (2SD600KE: hFE = 120–240 at IC = −50 mA, VCE = −5 V).

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 100 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage ceiling in amplifier and switch designs.
IC 1 A - Continuous collector current rating; supports load switching up to 1 A DC or pulsed without secondary breakdown risk at Tc ≤ 100 °C.
VCE(sat) −0.4 V max at IC = −500 mA / IB = −50 mA - Low saturation voltage minimizes conduction loss and heat generation in switching applications.
hFE 120–240 at IC = −50 mA, VCE = −5 V - High and linear DC current gain enables precise base drive sizing and stable bias networks.
fT 130 MHz - Transition frequency confirms usable bandwidth up to low-MHz range; suitable for audio and sub-100 kHz switching, not RF.
PC 1 W at Tc = 25 °C - Power dissipation limit sets minimum heatsink requirement; derates linearly to zero at Tc = 150 °C.

Pinout & Package

2SD600KE uses the TO-126 package (SANYO designation), a through-hole, single-ended power plastic package with integral metal tab for heatsink mounting. The case is electrically connected to the collector terminal.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Emitter terminal Reference node for current flow; connects to ground or low-side return path in common-emitter configurations.
2 (Collector) Collector terminal High-current output node; electrically tied to metal tab and must be insulated from heatsink using mica washer and silicone grease.
3 (Base) Base control terminal Low-current input controlling collector current; requires current-limiting resistor to ensure IB ≤ 50 mA for safe 1 A switching.

Key Features

Feature Design Value
High breakdown voltage VCEO = 100 V enables use in 48 V industrial supplies and 24 V relay drivers without derating.
Low VCE(sat) ≤ −0.4 V at rated IC/IB reduces power loss to < 200 mW during saturation, easing thermal management.
Linear hFE vs. IC Stable gain across 10–500 mA supports predictable biasing in Class-A amplifiers and analog current sources.
TO-126 thermal interface Metal tab allows direct heatsink attachment with mica insulation, achieving ≤ 5 °C/W junction-to-case resistance.

Applications

Audio Power Amplifier Output Stage Industrial Relay Driver

Use Scenario: Final output stage in 5–10 W Class-AB audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN power switch delivering amplified current to speaker load with minimal crossover distortion.

Use Value: VCEO = 100 V accommodates ±35 V rails; low VCE(sat) preserves headroom and reduces thermal stress at full output.

Use Scenario: Driving 24 VDC industrial relays (coil resistance ~200 Ω) in PLC I/O modules.

IC Role / Device Role / Timing Role: Medium-power saturated switch turning relay coil on/off via microcontroller GPIO.

Use Value: 1 A IC rating exceeds typical relay coil current (120 mA); hFE ≥ 120 ensures reliable turn-on with ≤ 1 mA base drive.

DC Motor Speed Control Linear Voltage Regulator Pass Element

Use Scenario: PWM-controlled H-bridge half-bridge leg for 12–24 V brushed DC motors (≤ 500 mA avg).

IC Role / Device Role / Timing Role: Low-frequency switching element handling motor current with flyback protection.

Use Value: fT = 130 MHz far exceeds PWM frequencies (< 20 kHz); TO-126 package supports heatsinking during stall conditions.

Use Scenario: Series pass transistor in adjustable 3–15 V, 500 mA linear regulators for sensor signal conditioning.

IC Role / Device Role / Timing Role: Current-amplifying element controlled by error amplifier to regulate output voltage.

Use Value: Linear hFE ensures stable loop gain; VCEO = 100 V allows > 30 V input headroom for wide-input-range designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD127G VCEO = 100 V, IC = 2 A, TO-220 package, hFE = 1000–2000 at IC = 1 A - higher gain, higher current, larger footprint. Requires PCB layout change due to TO-220 vs. TO-126; better suited for >1 A continuous loads but over-specified for 2SD600KE's 1 A target. Select MJD127G only if higher current headroom and TO-220 heatsink compatibility are required; not drop-in.
2SC2625 VCEO = 120 V, IC = 1 A, TO-126, hFE = 60–120 - lower gain binning, same package and voltage rating. Acceptable in relay drivers where hFE ≥ 60 suffices, but may require increased base drive in amplifier bias networks. Choose 2SC2625 when cost sensitivity outweighs gain linearity needs; verify base resistor recalibration for hFE min.

Compared with 2SD600KE, MJD127G offers higher current capacity and gain but demands TO-220 layout changes, while 2SC2625 matches the TO-126 form factor and voltage rating but trades hFE linearity for lower cost and reduced gain margin.

Availability

2SD600KE is available at Aetrix Electronics and suitable for industrial relay drivers, audio amplifier output stages, DC motor controllers, and linear regulator pass elements requiring stable component supply and long-term manufacturability.

Supply support for 2SD600KE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SD600KE belongs to onsemi's legacy bipolar power transistor product line, designed specifically for robust, cost-effective low-frequency amplification and switching in industrial control, audio, and power management systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2SD600KE?

The 2SD600KE has a maximum collector-emitter voltage rating of VCEO = 100 V under open-base conditions at Ta = 25 °C. This rating remains valid up to Tj = 150 °C, with no additional derating required below that junction temperature. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does the 2SD600KE have a built-in base-emitter resistor?

No, the 2SD600KE is a standard three-terminal NPN bipolar transistor with no integrated base-emitter resistor. External base drive circuitry-including current-limiting resistors-must be provided to ensure proper biasing and avoid thermal runaway. Its pinout (Emitter-Collector-Base) requires discrete resistor networks for reliable switching or amplification.

What is the thermal resistance junction-to-case for the 2SD600KE?

The 2SD600KE has a typical junction-to-case thermal resistance (RθJC) of 5 °C/W when mounted with mica insulator and silicone grease on a 100 × 100 × 1.5 mm aluminum heatsink. This value assumes full metal-tab contact and is critical for calculating allowable power dissipation at elevated case temperatures.

Is the 2SD600KE RoHS compliant and lead-free?

Yes, the 2SD600KE is RoHS compliant and lead-free per onsemi's packaging standards effective from 2006 onward. The TO-126 package uses matte tin-plated leads and halogen-free molding compound, meeting JEDEC J-STD-609 Category 1 requirements for lead-free soldering processes.

How does the hFE binning of 2SD600KE differ from 2SD600K?

The 2SD600KE is binned for hFE = 120–240 at IC = −50 mA and VCE = −5 V, whereas the 2SD600K is binned for hFE = 60–120 under identical conditions. This higher-gain bin makes the 2SD600KE preferable in low-base-drive applications like microcontroller-driven switches or high-stability amplifier bias networks.

2SD600KE Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
120 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 50mA, 5V
Power - Max:
1 W
Frequency - Transition:
130MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126

2SD600KE FAQ

1.How can I place an order for 2SD600KE through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD600KE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD600KE reliable?

The price and inventory of 2SD600KE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD600KE is usually 5 days.

3.What payment methods are accepted for 2SD600KE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD600KE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD600KE?

2SD600KE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD600KE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD600KE?

For technical support, including 2SD600KE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD600KE requirements.

6.How does Aetrix verify that 2SD600KE is sourced from the original manufacturer or authorized distributors?

All 2SD600KE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD600KE meets industry standards.

7.What is the process for return or replacement of 2SD600KE?

All 2SD600KE units undergo pre-shipment inspection (PSI). If there is an issue with 2SD600KE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD600KE part is unused and in its original packaging.

Return procedure for 2SD600KE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SD600KE Tags

  • 2SD600KE
  • 2SD600KE PDF
  • 2SD600KE Datasheet
  • 2SD600KE Specifications
  • 2SD600KE Images
  • onsemi
  • onsemi 2SD600KE
  • Buy 2SD600KE
  • 2SD600KE Price
  • 2SD600KE Distributor
  • 2SD600KE Supplier
  • 2SD600KE Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER