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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD613E

Name: 2SD613E
Brand: onsemi
SKU: 2SD613E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD613E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: 2SD613E.pdf

Description:: TRANS NPN 85V 6A TO-220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD613E from SANYO is a PNP epitaxial planar silicon power transistor rated for V_CEO = −85 V, I_C = −6 A, and P_C = 40 W at T_C = 25 °C, used in audio frequency (AF) 25–35 W output amplifier stages and switching applications requiring high-voltage breakdown and medium-current drive.

For engineers reviewing the 2SD613E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO rating, guaranteed h_FE range (20–400 at I_C = −1 A), f_T ≥ 15 MHz, TO-220AB package thermal performance, and safe operating area (SOA) compliance for linear and switching use cases.

Technical Context

This device operates as a complementary PNP counterpart to NPN transistors like 2SB633 in push-pull amplifier output stages. Its −85 V V_CEO and −6 A I_C support Class AB audio output and DC motor control circuits where reverse polarity high-power switching is required.

The transistor exhibits h_FE = 20–400 at V_CE = −5 V and I_C = −1 A, with f_T = 15 MHz ensuring adequate gain-bandwidth for AF amplification up to ~35 W. Switching times (t_on = 0.16 µs, t_off = 1.45 µs) confirm suitability for moderate-speed switching below 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−85 V: Maximum collector-emitter voltage before avalanche; enables use in 60–75 V rail audio amplifiers without derating.
I_C	−6 A: Continuous collector current; supports 30–35 W AF output into 4–8 Ω loads with proper heatsinking.
P_C	40 W at T_C = 25 °C: Power dissipation limit at case temperature; requires TO-220AB mounting to heatsink for sustained operation.
h_FE	20–400 at V_CE = −5 V, I_C = −1 A: DC current gain range; ensures stable biasing across production lots in linear amplifier designs.
f_T	15 MHz: Transition frequency; provides sufficient gain margin for full-power AF response up to 20 kHz.
t_on/t_off	0.16 µs / 1.45 µs: Verified switching times; supports PWM motor control and Class D pre-driver stages up to ~50 kHz.

Pinout & Package

2SD613E is housed in a JEDEC-standard TO-220AB plastic package (EIAJ SC-46), with metal tab electrically connected to collector for direct heatsink mounting and thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control electrode	Receives base current to regulate collector-emitter conduction; requires current-limiting resistor in driver stage.
2 (Collector)	Power input terminal	Connected to negative supply rail or load return; electrically tied to metal tab for thermal path to heatsink.
3 (Emitter)	Power output reference	Typically tied to circuit ground or common emitter node; carries full load current in common-emitter configuration.

Key Features

Feature	Design Value
High-voltage PNP structure	V_CEO = −85 V enables use in higher-rail industrial and audio systems where standard −50 V devices fail.
Medium-power SOA	Guaranteed safe operating area supports linear operation at 25–35 W output without secondary breakdown.
TO-220AB thermal interface	Low R_θJC (typ. 1.25 °C/W) allows 40 W dissipation with modest heatsink (R_θSA ≤ 2.5 °C/W).
Production-grade h_FE binning	Multiple h_FE groups (D/E/F) allow matched pair selection for push-pull amplifier symmetry.

Applications

Audio Power Amplifier Output Stage	DC Motor Driver (H-Bridge Low-Side)
Use Scenario: Final output stage in discrete Class AB audio amplifiers delivering 25–35 W into 4–8 Ω speakers. IC Role / Device Role / Timing Role: PNP power switch in complementary emitter-follower or quasi-complementary output topology. Use Value: −85 V V_CEO prevents clipping-induced breakdown during transient peaks; h_FE consistency ensures low crossover distortion.	Use Scenario: Low-side switch in 24–48 V DC motor H-bridge drivers for industrial actuators and robotics. IC Role / Device Role / Timing Role: High-current, high-voltage PNP switch controlling motor return path. Use Value: 40 W power rating and 1.45 µs t_off enable efficient PWM operation at 20–50 kHz with minimal switching loss.
Linear Voltage Regulator Pass Element	Switch-Mode Power Supply Pre-Driver
Use Scenario: Series pass transistor in adjustable linear regulators supplying ±15 V/3 A rails for analog instrumentation. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by dissipating excess input-output differential. Use Value: SOA-rated operation at V_CE = −30 V, I_C = −3 A ensures reliability under worst-case dropout conditions.	Use Scenario: Driver stage for high-side N-channel MOSFETs in offline SMPS half-bridge topologies. IC Role / Device Role / Timing Role: Level-shifting, current-amplifying pre-driver translating logic-level signals to gate-drive currents. Use Value: 15 MHz f_T and fast t_on/t_off preserve PWM fidelity and minimize dead-time distortion.

Audio Power Amplifier Output Stage

DC Motor Driver (H-Bridge Low-Side)

Use Scenario: Final output stage in discrete Class AB audio amplifiers delivering 25–35 W into 4–8 Ω speakers.

IC Role / Device Role / Timing Role: PNP power switch in complementary emitter-follower or quasi-complementary output topology.

Use Value: −85 V V_CEO prevents clipping-induced breakdown during transient peaks; h_FE consistency ensures low crossover distortion.

Use Scenario: Low-side switch in 24–48 V DC motor H-bridge drivers for industrial actuators and robotics.

IC Role / Device Role / Timing Role: High-current, high-voltage PNP switch controlling motor return path.

Use Value: 40 W power rating and 1.45 µs t_off enable efficient PWM operation at 20–50 kHz with minimal switching loss.

Linear Voltage Regulator Pass Element

Switch-Mode Power Supply Pre-Driver

Use Scenario: Series pass transistor in adjustable linear regulators supplying ±15 V/3 A rails for analog instrumentation.

IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by dissipating excess input-output differential.

Use Value: SOA-rated operation at V_CE = −30 V, I_C = −3 A ensures reliability under worst-case dropout conditions.

Use Scenario: Driver stage for high-side N-channel MOSFETs in offline SMPS half-bridge topologies.

IC Role / Device Role / Timing Role: Level-shifting, current-amplifying pre-driver translating logic-level signals to gate-drive currents.

Use Value: 15 MHz f_T and fast t_on/t_off preserve PWM fidelity and minimize dead-time distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD47	V_CEO = −70 V, I_C = −4 A, P_C = 30 W, TO-252 package	Lower voltage/current rating; surface-mount only; no metal tab for direct heatsinking	Select when board space is constrained and 25 W max output suffices; verify SOA at target V_CE.
BD711	V_CEO = −100 V, I_C = −12 A, P_C = 90 W, TO-3 package	Higher power handling; larger footprint; slower f_T (4 MHz); legacy through-hole only	Choose for >50 W applications or where −100 V margin is mandatory; expect longer t_off (~3 µs).

Compared with MJD47 and BD711, the 2SD613E offers balanced trade-offs: higher V_CEO than MJD47 for improved rail headroom, lower thermal mass and faster switching than BD711 for AF and PWM use, and TO-220AB compatibility with standard heatsinks.

Availability

2SD613E is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, linear voltage regulators, and SMPS pre-driver circuits requiring stable component supply and long-term industrial availability.

Supply support for 2SD613E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.

The 2SD613E belongs to SANYO's legacy bipolar power transistor family designed for high-fidelity audio output stages and industrial switching applications demanding robust SOA and consistent h_FE binning.

FAQ

What is the maximum collector-emitter voltage rating for the 2SD613E?

The 2SD613E has an absolute maximum V_CEO rating of −85 V at T_A = 25 °C. This rating applies with open-base condition and defines the upper limit for collector-to-emitter voltage before avalanche breakdown occurs. Operation above this value-even momentarily-may cause irreversible damage. The 2SD613E must be used within this limit in all circuit configurations, including flyback and inductive load switching.

Does the 2SD613E have a built-in base-emitter resistor?

No, the 2SD613E is a standard three-terminal PNP bipolar junction transistor with no internal base-emitter resistor. It requires external base drive circuitry-including current-limiting resistors and, where needed, base-emitter shunt resistors-to ensure proper turn-on/turn-off behavior and prevent thermal runaway. This distinguishes it from digital transistors (e.g., "DTC" series) which integrate bias resistors.

What is the typical transition frequency (f_T) of the 2SD613E and how does it affect audio use?

The 2SD613E has a minimum f_T of 15 MHz at V_CE = −5 V and I_C = −1 A. This bandwidth supports full audio spectrum amplification (20 Hz–20 kHz) with ample gain margin, minimizing phase shift and intermodulation distortion in linear output stages. In practice, the 2SD613E maintains usable h_FE well beyond 100 kHz, making it suitable for both AF and moderate-frequency switching roles.

Can the 2SD613E be used as a direct replacement for the 2SB633?

No-the 2SD613E and 2SB633 are complementary devices: 2SD613E is PNP, while 2SB633 is NPN. They share identical absolute maximum ratings and package (TO-220AB), but opposite polarity. In push-pull amplifier designs, they are used together-not interchangeably. Substituting one for the other without circuit rework will result in immediate functional failure due to reversed biasing.

What thermal management is required for continuous 40 W operation of the 2SD613E?

For continuous 40 W dissipation, the 2SD613E requires a heatsink with thermal resistance ≤2.5 °C/W (junction-to-ambient), assuming ambient temperature ≤40 °C and proper mounting (thermal grease, flat surface, torque-controlled screw). Its R_θJC is ~1.25 °C/W, so junction temperature will reach ~125 °C under these conditions-within its 150 °C T_j limit. Derating is necessary above 25 °C case temperature.

2SD613E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 6 A

Voltage - Collector Emitter Breakdown (Max):: 85 V

Vce Saturation (Max) @ Ib, Ic:: 2V @ 400mA, 4A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 1A, 5V

Power - Max:: 40 W

Frequency - Transition:: 15MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

2SD613E FAQ

1.How can I place an order for 2SD613E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD613E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD613E reliable?

The price and inventory of 2SD613E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD613E is usually 5 days.

3.What payment methods are accepted for 2SD613E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD613E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD613E?

2SD613E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD613E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD613E?

For technical support, including 2SD613E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD613E requirements.

6.How does Aetrix verify that 2SD613E is sourced from the original manufacturer or authorized distributors?

All 2SD613E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD613E meets industry standards.

7.What is the process for return or replacement of 2SD613E?

All 2SD613E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD613E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD613E part is unused and in its original packaging.

Return procedure for 2SD613E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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