onsemi 2SD826G

Overview

2SD826G from SANYO Semiconductor is an NPN epitaxial planar silicon transistor optimized for electronic flash circuits, featuring V_CEO = 20 V, I_C = 5 A (DC), h_FE = 280–560 at I_C = 0.5 A, V_CE(sat) = 0.5 V at I_C = 3 A / I_B = 60 mA, and f_T = 120 MHz - enabling fast switching in high-current strobe discharge paths.

For engineers reviewing the 2SD826G datasheet, pinout, applications, or equivalent options, key selection criteria include verified saturation voltage under pulsed 3 A load, h_FE rank G classification (280–560), TO-126 package thermal performance up to 10 W at T_C = 25°C, and suitability for DC/DC converter primary-side switching in flash capacitor charging circuits.

Technical Context

The 2SD826G operates as a medium-power NPN switching transistor with low V_CE(sat) and high current gain, designed specifically for driving flash lamp trigger transformers in portable and high-grade electronic flash systems. Its 120 MHz f_T supports clean turn-on/turn-off transitions, while t_on = 30 ns and t_f = 40 ns enable precise timing control in pulse-width-modulated charge circuits.

Thermal design relies on its TO-126 package's ability to dissipate 10 W at case temperature 25°C, supported by a maximum junction temperature of 150°C and storage range from –55°C to +150°C. The device is rated for I_CP = 8 A (100 ms pulse) and exhibits Cob = 45 pF at V_CB = 10 V, ensuring minimal capacitive loading in high-frequency transformer drive applications.

Key Specifications

Pinout & Package

SANYO TO-126 package: molded plastic case with metal tab (collector-connected), 3-pin vertical mounting, 15.5 mm × 11.0 mm footprint, 3.0 mm lead pitch, and integral heat-dissipating tab for mechanical and thermal attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with 2SD826G, 2SC2655-R offers smaller size but insufficient current for main flash charging, while MJD127G provides higher voltage margin and power handling at the cost of reduced DC gain and increased board area - making 2SD826G optimal for dedicated 20 V, 5 A flash switching where gain and saturation voltage are critical.

Availability

2SD826G is available at Aetrix Electronics and suitable for electronic flash charging, DC/DC converter switching, strobe lamp driver, and flash trigger transformer drive applications requiring stable component supply and consistent h_FE binning (Rank G).

Supply support for 2SD826G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and optoelectronic components before its acquisition by ON Semiconductor in 2013; known for high-reliability discrete transistors and flash-related ICs.

The 2SD826G belongs to SANYO's legacy power transistor product line engineered specifically for electronic flash and high-current pulse applications - emphasizing low saturation voltage, high gain consistency, and robust thermal performance in compact TO-126 packaging.

FAQ

What is the h_FE range for the 2SD826G transistor?

The 2SD826G is binned to Rank G, specifying a DC current gain (h_FE) range of 280 to 560 when measured at V_CE = 2 V and I_C = 0.5 A. This high-gain bin ensures predictable base drive requirements across production lots and supports efficient operation in battery-powered flash circuits where drive current must be minimized. The 2SD826G datasheet confirms this classification on page 1 under the h_FE ranking table.

Is the 2SD826G suitable for continuous 5 A operation?

The 2SD826G supports 5 A DC collector current only when case temperature (T_C) is maintained at 25°C with adequate heatsinking - its P_C rating drops to 1.0 W at T_A = 25°C ambient. For sustained 5 A operation, a heatsink maintaining T_C ≤ 25°C is mandatory; otherwise, derating per the PC–Ta curve (No.538-3/6) applies. The 2SD826G is primarily intended for pulsed flash applications, not continuous linear-mode use.

What is the pin configuration of the 2SD826G in TO-126 package?

The 2SD826G uses standard SANYO TO-126 pinout: Pin 1 = Emitter, Pin 2 = Collector (internally connected to metal tab), Pin 3 = Base - as confirmed in the "Package Dimensions" diagram on page No.538-2/6 of the official datasheet. This configuration is consistent across all 2SD826 variants and must be observed to avoid reverse-bias damage or thermal mismanagement due to incorrect tab grounding.

Does the 2SD826G have avalanche rating or ruggedness specifications?

No avalanche rating or secondary breakdown energy (E_AS) is specified for the 2SD826G in its official datasheet. It is characterized for safe operating area (SOA) under pulsed conditions (ICP = 8 A, 100 ms), but lacks explicit avalanche test data or ruggedness guarantees. Designers must implement external clamping or snubbing in inductive switching applications to prevent destructive voltage spikes beyond V_CEO = 20 V. The 2SD826G is not rated for unclamped inductive switching.

Can the 2SD826G replace the 2SD826 (non-G) variant in existing designs?

Yes - the 2SD826G is a gain-binned version of the base 2SD826, sharing identical absolute maximum ratings, pinout, package, and electrical characteristics except for guaranteed h_FE range (280–560 vs. unspecified or broader spread). All other parameters including V_CE(sat), f_T, and switching times are unchanged. Using 2SD826G improves design predictability in flash circuits where consistent base drive is critical, and the 2SD826G drop-in replacement requires no layout or schematic modification.