onsemi 2SD863F-AE

Overview

2SD863F-AE from SANYO is a PNP epitaxial planar silicon transistor designed for voltage regulation and relay/lamp driver applications in electrical equipment. It features V_CEO = –50 V, I_C = –500 mA, P_C = 0.9 W, h_FE = 60–200 (at I_C = –50 mA), and f_T = 150 MHz - enabling reliable switching and linear amplification in industrial control circuits.

For engineers reviewing the 2SD863F-AE datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-92MP package with emitter-collector-base pinout, −50 V V_CEO rating, −500 mA continuous collector current capability, and suitability for low-to-medium power DC switching and analog signal buffering.

Technical Context

The 2SD863F-AE operates as a general-purpose PNP bipolar junction transistor optimized for linear and switching roles in discrete power management stages. Its −50 V V_CEO and −500 mA I_C support robust operation in relay coil drivers and voltage regulator error amplifiers, while its f_T = 150 MHz enables stable gain at audio and low-RF frequencies.

Thermal performance is defined by T_j = 150 °C maximum junction temperature and P_C = 0.9 W at T_a = 25 °C, with derating to zero at 150 °C ambient. The device exhibits V_CE(sat) ≤ −0.5 V at I_C = −500 mA / I_B = −50 mA, confirming low-loss saturation behavior suitable for efficient on-state conduction.

Key Specifications

Pinout & Package

2SD863F-AE is housed in a TO-92MP (SANYO MP) plastic package with standardized 3-pin vertical lead configuration and JEDEC-compatible footprint. Pin identification is confirmed per SANYO specification sheet No.575–2/4: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Compared with 2SB764 and MPSA92, the 2SD863F-AE balances moderate voltage rating, high-speed switching, and wide h_FE tolerance - making it optimal for cost-effective, thermally constrained relay and lamp driver designs where exact gain matching is not critical.

Availability

2SD863F-AE is available at Aetrix Electronics and suitable for relay driver circuits, lamp dimming controls, voltage regulator error amplifiers, and discrete power supply sequencing requiring stable component supply and long-term industrial availability.

Supply support for 2SD863F-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete transistors and analog ICs before its acquisition by Panasonic in 2011.

The 2SD863F-AE belongs to SANYO's general-purpose PNP transistor family engineered for industrial control, power management, and electro-mechanical interface applications - emphasizing ruggedness, consistency, and ease of integration in through-hole designs.

FAQ

What is the absolute maximum collector-emitter voltage rating for the 2SD863F-AE?

The 2SD863F-AE has an absolute maximum V_CEO rating of −50 V at T_a = 25 °C. This rating applies under open-base conditions and must not be exceeded even momentarily. Derating is required above 25 °C ambient, with junction temperature limited to 150 °C. Exceeding this voltage risks avalanche breakdown and permanent device failure. Always verify operating V_CE margins in your 2SD863F-AE application.

Is the 2SD863F-AE pin-compatible with the 2SB764?

Yes, the 2SD863F-AE and 2SB764 share identical TO-92MP packaging and pinout: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base. Both devices originate from the same SANYO die family and match in V_CEO, I_C, P_C, and thermal specifications. The primary difference lies in h_FE binning - 2SB764 is sorted to 100–300, while 2SD863F-AE covers 60–200 - but PCB layout and wiring for 2SD863F-AE remain fully compatible with 2SB764.

What is the typical DC current gain (h_FE) of the 2SD863F-AE at −50 mA collector current?

The 2SD863F-AE exhibits h_FE = 60–200 when tested at I_C = −50 mA, V_CE = −2 V, and T_a = 25 °C. This wide gain range reflects standard production binning and ensures robust performance across temperature and supply variations. Designers should size base resistors assuming minimum h_FE = 60 for worst-case saturation, while the upper bound supports low-drive logic interfacing in the 2SD863F-AE application.

Can the 2SD863F-AE be used in linear amplifier configurations?

Yes, the 2SD863F-AE supports linear operation with verified f_T = 150 MHz and low distortion characteristics at I_C ≤ −100 mA. Its V_CE(sat) and h_FE stability across current and temperature make it suitable for Class-A audio preamplifiers and error amplifiers. However, linear use requires careful thermal management - the 2SD863F-AE's 0.9 W power dissipation limit must not be exceeded, especially at elevated ambient temperatures.

What is the maximum allowable junction temperature for the 2SD863F-AE?

The 2SD863F-AE has a maximum rated junction temperature (T_j) of 150 °C. This limit governs thermal design: at T_a = 25 °C, the device dissipates up to 0.9 W; above that ambient, power must be linearly derated to maintain T_j ≤ 150 °C. The 2SD863F-AE's thermal resistance θ_JA is approximately 167 °C/W (calculated from 0.9 W → 150 °C rise), so PCB copper area and airflow directly impact safe operating current in the 2SD863F-AE application.