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Renesas 2SK3391JX
- Part No.:
- 2SK3391JX
- Manufacturer:
- Renesas
- Category:
- Single FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
2SK3391JX.pdf
- Description:
- RF MOSFET 13.7V UPAK
- Quantity:
- Payment:
- Shipping:
Inventory:134,038
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Product details
Overview
2SK3391JX from Renesas Electronics is a silicon N-channel MOSFET designed for UHF power amplifier stages in wireless transmitters. It delivers 1.6 W output power at 836 MHz, with 18 dB power gain and minimum 58% added efficiency under VDS = 13.7 V and IDO = 0.15 A conditions. Its UPAK surface-mount package supports compact RF front-end integration.
For engineers reviewing the 2SK3391JX datasheet, 2SK3391JX pinout, 2SK3391JX application, or 2SK3391JX equivalent, key selection criteria include UHF small-signal-to-power amplification capability, gate threshold voltage (2.3–3.1 V), drain-source breakdown rating (17 V), thermal derating curve, and input/output capacitance behavior at 836 MHz.
Technical Context
The 2SK3391JX operates as a single-ended Class-A/AB RF power transistor optimized for 800–900 MHz bands. Its transfer characteristics show strong transconductance response up to 10 V gate drive, with typical |yfs| peaking near 0.6 S at ID ≈ 0.3 A under pulsed conditions.
Thermal design relies on case temperature (Tc) derating: maximum channel dissipation drops from 5 W at Tc = 25°C to zero at Tc = 150°C, per the published Pch vs. Tc curve. The device requires electrostatic discharge handling due to ±10 V gate-source voltage limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 17 V - Maximum drain-source blocking voltage; sets upper limit for DC supply rail in UHF PA stage |
| VGS(off) | 2.3–3.1 V - Gate threshold range defining turn-on point; critical for bias network stability at RF frequencies |
| Pout | 1.6 W - Measured saturated RF output at 836 MHz; enables single-stage boost in portable 800 MHz transmitters |
| PG | 18 dB - Small-signal power gain at 836 MHz; determines required driver stage output level |
| ηadd | ≥58% - Added efficiency metric including RF input power; indicates DC-to-RF conversion effectiveness |
| Ciss | 10 pF typ. - Input capacitance at VGS = 5 V; directly impacts matching network design and bandwidth |
| Pch | 5 W @ Tc = 25°C - Maximum continuous channel dissipation; defines heatsinking requirement for sustained operation |
Pinout & Package
2SK3391JX uses the UPAK (Ultra Small Package) surface-mount outline: 4.5 mm × 2.5 mm × 1.8 mm max, with gull-wing leads. Marking "JX" identifies the device variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; high-impedance input requiring ESD-safe PCB layout and gate resistor for stability |
| 2, 4 | Source | Common reference node; dual-source pins reduce lead inductance for RF grounding in UHF layouts |
| 3 | Drain | Power output node; connected to output matching network and DC feed choke; carries RF current and DC bias |
Key Features
| Feature | Design Value |
|---|---|
| UHF Power Amplifier Optimization | Tuned for 836 MHz operation with verified 1.6 W output and 18 dB gain - eliminates need for external harmonic filtering in narrowband ISM band designs |
| Dual-Source Terminal Layout | Pins 2 and 4 both serve as source connections - lowers source inductance to improve stability and gain flatness above 500 MHz |
| Thermally Derated Channel Dissipation | 5 W at Tc = 25°C, linearly reduced to zero at Tc = 150°C - enables precise thermal margining in sealed RF modules |
| ESD-Sensitive Gate Structure | ±10 V VGSS rating with explicit handling warning - mandates grounded wrist straps and ionized air during assembly to prevent latent failure |
Applications
| Cellular Band Power Amplifier | ISM Band Transmitter Stage |
|---|---|
Use Scenario: Final-stage RF power amplification in 800–900 MHz cellular infrastructure repeaters and low-power base stations. IC Role / Device Role / Timing Role: N-channel MOSFET operating in Class AB mode to deliver regulated 1.6 W output into 50 Ω load at 836 MHz. Use Value: Enables single-transistor PA solution without cascaded stages, reducing BOM count and board area while maintaining ≥58% added efficiency. | Use Scenario: Transmit power stage in 868/915 MHz ISM-band IoT sensors and remote telemetry units. IC Role / Device Role / Timing Role: UHF power switch amplifying modulated carrier from IF/RF IC to antenna interface. Use Value: Delivers sufficient output headroom (1.6 W) for FCC/ETSI-compliant radiated power with minimal external matching components. |
| Portable Radio Front-End | Two-Way Land Mobile Radio |
Use Scenario: Compact handheld radio transmitter final amplifier where size and thermal management are constrained. IC Role / Device Role / Timing Role: Surface-mount MOSFET in UPAK package enabling direct PCB mounting adjacent to antenna switch and filter. Use Value: 4.5 × 2.5 mm footprint reduces RF trace length and parasitic inductance, improving gain consistency across temperature. | Use Scenario: Mobile radio transceiver PA module operating in 806–869 MHz public safety band. IC Role / Device Role / Timing Role: High-efficiency power device biased for linear operation to support analog FM and digital P25 waveforms. Use Value: 58% added efficiency minimizes battery drain during extended transmission bursts, extending operational runtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar UHF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NE3512M04 | GaAs FET; higher fT (>12 GHz), lower Ciss (3.5 pF), but lower Pout (0.5 W) and no dual-source terminals | Better suited for broadband or multi-band designs above 1 GHz; not drop-in for 836 MHz 1.6 W requirement | Select when wider bandwidth or higher frequency operation is prioritized over output power |
| RD07MVS1 | Silicon LDMOS; higher VDSS (28 V), higher Pout (7 W), larger SOT-223 package, different pinout (G-D-S) | Requires PCB redesign and higher-voltage bias; used in higher-power base station applications | Select when system demands >2 W output or improved ruggedness against load mismatch |
Compared with NE3512M04 and RD07MVS1, the 2SK3391JX provides optimal balance of output power, package size, and thermal performance specifically for 836 MHz single-stage portable transmitter designs - neither alternative matches its 1.6 W output in a 4.5 × 2.5 mm UPAK footprint with dual-source configuration.
Availability
2SK3391JX is available at Aetrix Electronics and suitable for cellular repeater modules, ISM-band IoT transmitters, and portable two-way radios requiring stable component supply and consistent RF performance across production batches.
Supply support for 2SK3391JX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and RF devices for industrial, automotive, and communications markets.
The 2SK3391JX belongs to Renesas' legacy UHF power MOSFET product line, engineered specifically for compact, high-efficiency RF power amplification in 800–900 MHz wireless infrastructure and portable radio equipment.
FAQ
What is the maximum operating frequency supported by the 2SK3391JX?
The 2SK3391JX is characterized and specified for operation at 836 MHz, with measured performance including 1.6 W output power, 18 dB power gain, and ≥58% added efficiency at that frequency. While usable up to ~1 GHz, gain and efficiency degrade beyond 836 MHz per the published small-signal and large-signal data - it is not rated for L-band or higher-frequency applications.
Does the 2SK3391JX require external gate protection circuitry?
Yes, the 2SK3391JX gate is ESD-sensitive with a ±10 V absolute maximum rating. A series gate resistor (typically 10–100 Ω) and parallel Zener clamp (e.g., 5.1 V) are recommended to suppress ringing and transient overvoltage during RF switching. The datasheet explicitly warns of ESD sensitivity and mandates proper handling procedures.
Can the 2SK3391JX be used in Class C amplifier configurations?
No - the 2SK3391JX is characterized and optimized for Class A/AB operation, as confirmed by its test conditions (IDO = 0.15 A quiescent current, VDS = 13.7 V). Its transfer characteristics and thermal derating curve assume linear conduction; Class C use would exceed safe operating area limits and risk thermal runaway or gate oxide damage.
What is the meaning of "JX" in the part number 2SK3391JX?
The "JX" suffix is the marking code laser-etched on the 2SK3391JX package per Renesas' ordering information. It identifies this specific variant within the 2SK3391 family and corresponds to the UPAK package with taping packaging (1000 pcs/reel). No functional difference exists between JX and other suffixes like J or JZ beyond packaging and reel configuration.
How does the dual-source pin configuration (pins 2 and 4) affect PCB layout?
The dual-source configuration in the 2SK3391JX reduces effective source inductance by providing two parallel low-inductance paths to ground. In PCB layout, both pins must be connected to the same RF ground plane using short, wide traces or thermal pads - splitting them degrades stability and gain flatness, especially above 500 MHz.
2SK3391JX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 100MHz ~ 2.5GHz
- Gain:
- -
- Voltage - Test:
- 13.7 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 1.6W
- Voltage - Rated:
- 17 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UPAK
2SK3391JX FAQ
1.How can I place an order for 2SK3391JX through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3391JX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3391JX reliable?
The price and inventory of 2SK3391JX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3391JX is usually 5 days.
3.What payment methods are accepted for 2SK3391JX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3391JX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3391JX?
2SK3391JX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3391JX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3391JX?
For technical support, including 2SK3391JX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3391JX requirements.
6.How does Aetrix verify that 2SK3391JX is sourced from the original manufacturer or authorized distributors?
All 2SK3391JX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3391JX meets industry standards.
7.What is the process for return or replacement of 2SK3391JX?
All 2SK3391JX units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3391JX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3391JX part is unused and in its original packaging.
Return procedure for 2SK3391JX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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