STMicroelectronics 2STC4793

Overview

2STC4793 from STMicroelectronics is an NPN power bipolar transistor fabricated with PB-HDC (Power Bipolar High Density Current) technology, delivering V_CEO = 230 V, f_T = 100 MHz (typ), and DC current gain h_FE = 100–320 at I_C = 0.1 A. It serves as a high-voltage, medium-power amplifying device in audio output and driver stages.

For engineers reviewing the 2STC4793 datasheet, 2STC4793 pinout, 2STC4793 application, or 2STC4793 equivalent, key selection criteria include breakdown voltage margin, thermal resistance (R_thJC = 6.25 °C/W), saturation voltage (V_CE(sat) = 1 V @ I_C = 0.5 A), and complementary pairing with 2STA1837 for push-pull designs.

Technical Context

This device operates as a single NPN silicon power transistor optimized for linear amplification, not switching. Its PB-HDC process ensures improved gain linearity and stable h_FE across collector current, critical for low-distortion audio stages.

Absolutely rated for V_CEO and V_CBO up to 230 V, it supports operation at T_J = 150 °C with junction-to-case thermal resistance of 6.25 °C/W - enabling direct mounting on heatsinks without isolation washers in TO-220FP package.

Key Specifications

Pinout & Package

Package: TO-220FP (full-pack, insulated tab, 3-pin vertical mount). Tab is electrically connected to collector; pins are emitter (1), base (2), collector (3) - confirmed by internal schematic (Fig. 1) and mechanical drawing (Fig. 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2SC5200 and MJE13009, the 2STC4793 offers superior small-signal bandwidth and gain consistency for linear amplification, while maintaining identical breakdown voltage - making it optimal for fidelity-critical audio and driver roles where distortion and transient response matter.

Availability

2STC4793 is available at Aetrix Electronics and suitable for Hi-Fi audio amplifiers, professional audio driver stages, instrumentation signal amplifiers, and industrial motor control pre-drivers requiring stable component supply and documented thermal performance.

Supply support for 2STC4793 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for industrial, automotive, and consumer markets.

The 2STC4793 belongs to ST's high-voltage power bipolar transistor family, engineered specifically for high-fidelity linear amplification and robust driver-stage performance in audio and industrial analog systems.

FAQ

Is the 2STC4793 pin-compatible with standard TO-220 NPN transistors?

Yes - it uses the standard TO-220FP footprint with emitter-base-collector pinout (1-2-3), matching mechanical and electrical layout of industry-standard TO-220 devices. The insulated tab eliminates need for isolation hardware in most PCB heatsink mounts.

What is the maximum safe operating area (SOA) limitation for continuous DC operation?

At T_C = 25 °C, the device supports up to 1 A DC collector current with V_CE ≤ 20 V, constrained by P_TOT = 20 W. Derating is required above 25 °C case temperature per R_thJC = 6.25 °C/W, limiting usable power at 80 °C case to ~12.5 W.

Can the 2STC4793 be used in parallel configurations?

Yes - its positive temperature coefficient of V_BE and consistent h_FE spread enable stable current sharing when paralleled with emitter resistors (0.1–0.22 Ω). Thermal coupling between devices is recommended to minimize mismatch drift.

Does ST provide SPICE models for the 2STC4793?

No official SPICE model is published by ST for the 2STC4793. Designers should use generic NPN models with parameters extracted from Table 4 (e.g., IS = 1e−14 A, BF = 200, VAF = 50 V, CJC = 20 pF) and validate against measured f_T and V_CE(sat) in simulation.