STMicroelectronics 2STF2360

Overview

2STF2360 from STMicroelectronics is a PNP bipolar power transistor in SOT-89 package, designed for low-voltage fast-switching applications with V_CEO = −60 V, I_C = −3 A, V_CE(sat) = −320 mV (at I_C = −3 A, I_B = −150 mA), h_FE = 160–400, and f_T = 130 MHz - used in LED driver stages and relay drive circuits.

For engineers reviewing the 2STF2360 datasheet, 2STF2360 pinout, 2STF2360 application, or 2STF2360 equivalent, key selection criteria include saturation voltage under high-current switching, DC current gain stability at I_C = −1 A, thermal resistance (R_thJA = 89 °C/W), and compatibility with SOT-89 PCB footprints in space-constrained lighting and power control designs.

Technical Context

This PNP transistor employs ST's PB-HDC (Power Bipolar High Density Current) process to simultaneously achieve high h_FE (≥160 at I_C = −1 A) and ultra-low V_CE(sat) (≤−320 mV). Its switching performance is characterized by t_d/t_r/t_s/t_f ≤ 15/100/350/50 ns under resistive load conditions (V_CC = −10 V, I_B(on/off) = −300 mA).

Thermal design is constrained by R_thJA = 89 °C/W on a 1 cm² PCB copper area, limiting continuous power dissipation to 1.4 W at T_amb = 25 °C. The device operates up to T_J = 150 °C and supports storage down to −65 °C, suitable for industrial ambient environments.

Key Specifications

Pinout & Package

SOT-89 package: 3-pin surface-mount plastic case with exposed emitter tab for thermal conduction and mechanical anchoring; pin 1 = Emitter, pin 2 = Base, pin 3 = Collector (viewed top-down, tab facing away).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power switching applications.

Compared with MBT3906DW1T1G and PN2907A, the 2STF2360 delivers 5× higher continuous current, 5× lower V_CE(sat), and integrated thermal path via SOT-89 tab - making it uniquely suited for production-grade, thermally constrained, medium-power PNP switching.

Availability

2STF2360 is available at Aetrix Electronics and suitable for emergency lighting systems, LED driver modules, and industrial relay interface circuits requiring stable component supply over extended product lifecycles.

Supply support for 2STF2360 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The 2STF2360 belongs to ST's legacy power bipolar transistor family optimized for cost-sensitive, medium-current switching - targeting applications where MOSFET gate drive complexity or cost must be avoided while maintaining low-loss performance.

FAQ

What is the maximum safe operating temperature for the 2STF2360 junction?

The absolute maximum junction temperature (T_J) is 150 °C per the datasheet. Operation above this threshold risks permanent parametric shift or thermal runaway. Derating is required above T_amb = 25 °C - for example, at 70 °C ambient, maximum allowable power dissipation drops to ~0.8 W based on R_thJA = 89 °C/W.

Can the 2STF2360 be driven directly from a 3.3 V microcontroller GPIO?

Yes, but only in saturated switching mode with appropriate base resistor. At I_C = −100 mA, V_BE(on) is −630 to −730 mV, so a 3.3 V GPIO can deliver sufficient base current (e.g., 1 kΩ resistor yields ~2.6 mA I_B). For I_C = −3 A, ≥−150 mA I_B is needed - requiring active base drive or Darlington configuration.

Is the SOT-89 package lead-free and RoHS-compliant?

Yes. The 2STF2360 is manufactured in ST's ECOPACK®-compliant SOT-89 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. "ECOPACK®" denotes ST's environmental compliance program, and full material declarations are available upon request from ST's official product page.

Does the 2STF2360 have built-in protection features like thermal shutdown or overcurrent limiting?

No. The 2STF2360 is a bare PNP bipolar transistor without integrated protection circuitry. External design measures - such as base current limiting, collector snubbers, PCB copper area for heat spreading, and system-level current sensing - are required to prevent secondary breakdown, thermal runaway, or avalanche failure under transient overload.