STMicroelectronics 2STL2580-AP

Overview

2STL2580-AP from STMicroelectronics is a high-voltage fast-switching NPN power transistor in TO-92MOD ammopack packaging, rated for V_CEO = 400 V, I_C = 1 A, and P_TOT = 1.5 W at T_amb = 25 °C, with t_r/t_f = 140 ns/90 ns and R_thJA = 83 °C/W, designed for lighting ballasts and low-cost switch-mode power supplies.

For engineers reviewing the 2STL2580-AP datasheet, 2STL2580-AP pinout, 2STL2580-AP application, or 2STL2580-AP equivalent, key selection criteria include high-voltage blocking (V_CEO = 400 V), fast switching (t_r = 140 ns), wide RBSOA, saturation voltage (V_CE(sat) = 1 V @ I_C = 1 A), and TO-92MOD thermal-mechanical compatibility.

Technical Context

This device uses high-voltage multi-epitaxial planar technology to achieve fast switching while sustaining medium-voltage operation. Its cellular emitter structure and planar edge termination jointly optimize switching speed and ruggedness across the reverse-biased safe operating area (RBSOA).

The transistor delivers DC current gain (h_FE) of 60–100 at I_C = 250 mA and V_CE = 5 V, with V_BE(sat) = 1.1 V and V_CE(sat) = 1 V under I_C = 1 A / I_B = 0.2 A conditions-enabling efficient base drive and low conduction loss in hard-switched topologies.

Key Specifications

Pinout & Package

2STL2580-AP is housed in TO-92MOD package: three-terminal through-hole plastic case with lead spacing matching standard TO-92 footprints but optimized mechanical dimensions (e.g., D = 5.8–6.2 mm, L = 13.8–14.2 mm) for improved thermal and mechanical reliability in automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching applications.

Compared with BU2508AX and 2SD1802, the 2STL2580-AP balances voltage margin, switching speed, and gain stability-making it optimal for cost-sensitive 50–150 kHz lighting and adapter designs where thermal constraints limit heatsink use.

Availability

2STL2580-AP is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, low-power AC-DC adapters, and industrial relay drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for 2STL2580-AP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for industrial, automotive, and consumer markets.

The 2STL2580-AP belongs to ST's high-voltage bipolar transistor product line, engineered specifically for cost-efficient, thermally constrained switching applications in lighting and low-power SMPS where reliability and manufacturability are critical.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The 2STL2580-AP has a maximum operating junction temperature of 150 °C. With R_thJA = 83 °C/W, sustained 1.5 W dissipation requires ambient temperatures below 30 °C without heatsinking. For operation above 50 °C ambient, PCB copper area or minimal finned heatsink is recommended to maintain T_J < 130 °C for long-term reliability.

Can 2STL2580-AP replace 2STL2580 in existing designs?

Yes-the 2STL2580-AP shares identical electrical characteristics, pinout, and TO-92MOD mechanical form factor with the bag-packaged 2STL2580. The only difference is ammopack tape-and-reel packaging optimized for automated insertion, making it a direct drop-in replacement for SMT-compatible through-hole assembly lines.

Is this transistor suitable for avalanche operation?

No-2STL2580-AP is not rated or characterized for repetitive avalanche energy handling. Its safe operating area curves assume non-avalanche switching. For circuits subject to unclamped inductive switching, external snubbers or clamping diodes must be used to limit V_CE to ≤400 V during turn-off.

What is the typical base drive requirement for saturation at full load?

At I_C = 1 A, V_CE(sat) ≤ 1 V is guaranteed with I_B = 0.2 A. Given h_FE ≥ 60, a base resistor of ≤22 Ω is needed when driven from a 5 V logic source. For margin, 15 Ω is recommended to ensure deep saturation across temperature and process variation.