STMicroelectronics 2STW1695

Overview

2STW1695 from STMicroelectronics is a high-power PNP epitaxial planar bipolar transistor designed for audio power amplifier output stages, featuring V_CEO = −140 V, I_C = −10 A, P_tot = 100 W at T_c = 25 °C, f_T = 20 MHz, and R_thj-case = 1.25 °C/W - optimized for 70–100 W high-fidelity audio amplifiers.

For engineers reviewing the 2STW1695 datasheet, 2STW1695 pinout, 2STW1695 application, or 2STW1695 equivalent, key selection factors include safe operating area at 125 °C, gain linearity under linear amplifier bias, complementary pairing with 2STW4468, and TO-247 thermal performance in Class AB output stages.

Technical Context

This PNP transistor employs ST's BiT-LA (Bipolar transistor for linear amplifier) process to achieve stable h_FE linearity across collector current (70–140 at I_C = −3 A to −5 A) and low V_CE(sat) (−0.5 V at I_C = −5 A / I_B = −500 mA), enabling high-efficiency, low-distortion audio output operation.

It is fully characterized up to T_case = 125 °C, with guaranteed V_(BR)CEO ≥ −140 V and robust switching parameters (t_on = 0.24 µs, t_stg = 1.2 µs, t_f = 0.24 µs) under resistive load conditions per Figure 8 test circuit.

Key Specifications

Pinout & Package

Supplied in TO-247 package (standard 3-lead vertical power plastic) with electrically isolated tab (collector-connected). Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power PNP linear amplifier applications.

Compared with MJD127 and BD711, the 2STW1695 provides superior voltage headroom, thermal capacity, and small-signal linearity - making it uniquely suited for demanding 70–100 W high-fidelity output stages where distortion, bandwidth, and SOA integrity are critical.

Availability

2STW1695 is available at Aetrix Electronics and suitable for home audio amplifiers, professional mixing consoles, studio monitors, and hi-fi receivers requiring stable component supply for discrete power amplifier builds.

Supply support for 2STW1695 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The 2STW1695 belongs to ST's high-power bipolar transistor product line, engineered specifically for linear audio amplifier applications using BiT-LA process technology to optimize gain linearity and thermal robustness.

FAQ

Is the 2STW1695 still in active production?

No - the official STMicroelectronics datasheet marks 2STW1695 as "Obsolete Product(s)". However, Aetrix Electronics maintains limited legacy inventory with full traceability and supports design continuity for existing audio amplifier platforms through controlled distribution and lifecycle coordination.

Can the 2STW1695 be used in parallel configurations?

Yes, but only with matched devices and individual emitter resistors (≥0.22 Ω) to ensure current sharing. The BiT-LA process improves parameter uniformity, and the TO-247 package allows consistent mounting pressure and thermal coupling - both essential for stable parallel operation in >150 W designs.

What is the recommended base drive for linear operation?

For Class AB biasing at I_CQ ≈ −100 mA, use a low-impedance base drive network with I_BQ ≈ −1.5 mA (h_FE ≈ 70). Maintain V_BE ≈ −1.3 V at operating point; avoid capacitive coupling directly to base to prevent instability from Miller effect at 20 MHz f_T.

Does the TO-247 package require insulating hardware?

Yes - Pin 3 (collector) is internally connected to the metal tab. When mounting to a shared heatsink, use an insulating washer and bushing (e.g., mica + silicone grease or polymer pad) to prevent short circuits. Thermal resistance increases by ~0.3–0.5 °C/W with proper insulation, which must be factored into heatsink design.