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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 30A01M-TL-E

Name: 30A01M-TL-E
Brand: onsemi
SKU: 30A01M-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 30A01M-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: 30A01M-TL-E.pdf

Description:: TRANS PNP 30V 0.3A 3-MCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

30A01M-TL-E from ON Semiconductor is a PNP epitaxial planar silicon transistor designed for low-frequency power amplification and muting circuits, with V_CEO = −30 V, I_C = −300 mA, R_CE(sat) = 0.67 Ω (I_C = −0.3 A, I_B = −15 mA), and f_T = 520 MHz - deployed in audio amplifier stages and signal gating in consumer audio systems.

For engineers reviewing the 30A01M-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include confirmed PNP polarity, −30 V breakdown ratings, ultrasmall SOT-323 (SC-70) package footprint, low V_CE(sat) performance under −100 mA drive, and verified h_FE range of 200–500 at −10 mA.

Technical Context

This device operates as a general-purpose low-frequency PNP switching and linear amplifier transistor. Its −30 V V_CEO and −300 mA I_C rating support robust operation in battery-powered and line-powered analog signal paths, while its 520 MHz f_T enables stable gain beyond audio bands into low-VHF ranges.

Designed for direct DC-coupled or emitter-follower configurations, it delivers low saturation voltage (−110 to −220 mV at I_C = −100 mA, I_B = −5 mA) and high DC current gain (h_FE ≥ 200), making it suitable for precision current control and analog muting where minimal on-state loss and predictable beta are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V: Maximum safe collector-emitter reverse bias before breakdown in open-base condition.
I_C	−300 mA: Continuous collector current limit defining usable output drive capability in linear or switching modes.
R_CE(sat)	0.67 Ω typ (I_C = −0.3 A, I_B = −15 mA): Low on-resistance enabling efficient current sourcing in muting or load-switching roles.
f_T	520 MHz: Gain-bandwidth product confirming usable small-signal amplification up to ~100 MHz at moderate gain.
h_FE	200–500 (V_CE = −2 V, I_C = −10 mA): Predictable DC current gain supporting stable bias design in amplifier and switch applications.
V_CE(sat)	−110 to −220 mV (I_C = −100 mA, I_B = −5 mA): Confirmed low saturation voltage ensuring minimal voltage drop in active-on state.
C_ob	3 pF (V_CB = −10 V, f = 1 MHz): Output capacitance affecting high-frequency roll-off and stability in feedback networks.

Pinout & Package

30A01M-TL-E is housed in an ultrasmall SOT-323 (SC-70) surface-mount package measuring 2.0 × 2.1 × 0.9 mm, optimized for space-constrained PCB layouts in portable audio and compact power management modules.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal accepting negative base current to turn on PNP conduction; requires external current-limiting resistor in most driver circuits.
2	Emitter	Common reference terminal connected to higher potential rail (e.g., V_CC); source of majority carriers during conduction.
3	Collector	Output terminal delivering controlled current to load; connected to lower-potential node (e.g., ground or signal return) in typical amplifier/muting configurations.

Key Features

Feature	Design Value
Large current capacity	Rated for −300 mA continuous collector current, supporting direct drive of medium-power loads without heatsinking.
Low V_CE(sat)	−110 to −220 mV at −100 mA ensures <1% voltage loss in series-muting applications, preserving signal headroom.
Ultrasmall SOT-323 package	2.0 × 2.1 mm footprint reduces board area by >50% vs. SOT-23, enabling miniaturization in hearing aids and wearable audio devices.
High f_T	520 MHz bandwidth allows stable operation in wideband preamplifier stages and RF detector bias circuits up to 100 MHz.
Low leakage	I_CBO ≤ −0.1 µA at −30 V supports low-power standby states and precision bias networks with minimal drift.

Applications

Audio Amplifier Muting	Low-Voltage Power Switch
Use Scenario: Silent insertion/extraction of audio sources in docking stations and USB-C audio adapters. IC Role / Device Role / Timing Role: PNP transistor used as series emitter-follower switch in signal path, activated only during mute command. Use Value: −220 mV V_CE(sat) minimizes audible pop/click artifacts by limiting transient voltage overshoot during switching.	Use Scenario: Enable/disable of analog supply rails in multi-voltage SoC subsystems (e.g., codec core, ADC reference). IC Role / Device Role / Timing Role: Low-side PNP switch controlling 3.3 V or 5 V analog domain power delivery with fast turn-on/turn-off. Use Value: 39 ns t_on and 48 ns t_f ensure clean power sequencing without brown-out glitches in mixed-signal ICs.
DC-Coupled Preamp Stage	Signal Polarity Inverter
Use Scenario: First-stage amplification in battery-powered microphone preamplifiers with no input coupling capacitor. IC Role / Device Role / Timing Role: Common-emitter PNP amplifier providing inverted gain with DC-coupled input and output. Use Value: h_FE ≥ 200 and f_T = 520 MHz enable stable 20 dB gain up to 5 MHz without phase reversal or instability.	Use Scenario: Logic-level inversion for analog control signals in industrial sensor interfaces (e.g., 0–5 V to −5–0 V conversion). IC Role / Device Role / Timing Role: Emitter-follower configured as level-shifting inverter with fixed gain ≈ −1 and low output impedance. Use Value: R_CE(sat) = 0.67 Ω ensures <10 mV error at 10 mA load, maintaining signal fidelity across temperature.

Audio Amplifier Muting

Low-Voltage Power Switch

Use Scenario: Silent insertion/extraction of audio sources in docking stations and USB-C audio adapters.

IC Role / Device Role / Timing Role: PNP transistor used as series emitter-follower switch in signal path, activated only during mute command.

Use Value: −220 mV V_CE(sat) minimizes audible pop/click artifacts by limiting transient voltage overshoot during switching.

Use Scenario: Enable/disable of analog supply rails in multi-voltage SoC subsystems (e.g., codec core, ADC reference).

IC Role / Device Role / Timing Role: Low-side PNP switch controlling 3.3 V or 5 V analog domain power delivery with fast turn-on/turn-off.

Use Value: 39 ns t_on and 48 ns t_f ensure clean power sequencing without brown-out glitches in mixed-signal ICs.

DC-Coupled Preamp Stage

Signal Polarity Inverter

Use Scenario: First-stage amplification in battery-powered microphone preamplifiers with no input coupling capacitor.

IC Role / Device Role / Timing Role: Common-emitter PNP amplifier providing inverted gain with DC-coupled input and output.

Use Value: h_FE ≥ 200 and f_T = 520 MHz enable stable 20 dB gain up to 5 MHz without phase reversal or instability.

Use Scenario: Logic-level inversion for analog control signals in industrial sensor interfaces (e.g., 0–5 V to −5–0 V conversion).

IC Role / Device Role / Timing Role: Emitter-follower configured as level-shifting inverter with fixed gain ≈ −1 and low output impedance.

Use Value: R_CE(sat) = 0.67 Ω ensures <10 mV error at 10 mA load, maintaining signal fidelity across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	V_CEO = −40 V, I_C = −200 mA, h_FE = 100–300 - higher voltage rating but lower current and gain.	Suitable for logic-level switching and low-current biasing, not recommended for −300 mA muting loads.	Select when higher breakdown margin is needed and load current stays below −200 mA.
DXT3906-7-F	V_CEO = −40 V, I_C = −500 mA, SOT-563 package - higher current, same polarity, but larger 2.7 × 2.0 mm footprint.	Preferred for higher-power analog switches where board space permits larger package and thermal mass.	Choose when thermal dissipation >300 mW is required and SOT-563 layout is acceptable.

Compared with MMBT3906LT1G and DXT3906-7-F, the 30A01M-TL-E uniquely balances −300 mA current handling, ultrasmall SOT-323 size, and 520 MHz f_T - making it optimal for space-constrained, medium-current analog signal control where both gain and switching speed matter.

Availability

30A01M-TL-E is available at Aetrix Electronics and suitable for audio amplifier muting, low-voltage power switching, and DC-coupled preamplifier applications requiring stable component supply and long-term production continuity.

Supply support for 30A01M-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier specializing in energy-efficient power management, analog, and sensor solutions for automotive, industrial, and consumer markets.

The 30A01M-TL-E belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, engineered for reliable low-frequency analog signal conditioning and power control in cost-sensitive, high-volume consumer electronics.

FAQ

What is the absolute maximum collector-emitter voltage rating for the 30A01M-TL-E?

The 30A01M-TL-E has an absolute maximum V_CEO rating of −30 V at T_a = 25°C. This specifies the highest reverse-biased voltage the collector-emitter junction can withstand with the base open. Exceeding this value risks permanent junction breakdown. The 30A01M-TL-E must be operated within this limit in all circuit configurations, including transient conditions, to ensure reliability and longevity.

Does the 30A01M-TL-E have a documented gain-bandwidth product, and what does it mean for circuit design?

Yes, the 30A01M-TL-E has a specified f_T of 520 MHz at V_CE = −10 V and I_C = −50 mA. This means the transistor maintains unity current gain up to approximately 520 MHz under those test conditions. For practical amplifier design, it supports stable small-signal gain of 10–20 dB up to ~50–100 MHz, making the 30A01M-TL-E suitable for wideband preamplifiers and RF detector biasing - not just audio frequencies.

What is the typical collector-to-emitter saturation resistance of the 30A01M-TL-E, and how is it measured?

The 30A01M-TL-E has a typical R_CE(sat) of 0.67 Ω, measured at I_C = −0.3 A and I_B = −15 mA. This parameter reflects the effective on-resistance between collector and emitter when fully saturated, directly impacting power loss and voltage drop in switching applications. It is derived from V_CE(sat)/I_C, and the 30A01M-TL-E achieves this low value due to its epitaxial planar structure and optimized doping profile.

Is the 30A01M-TL-E packaged in a standard SOT-323 footprint, and are pin assignments consistent with JEDEC standards?

Yes, the 30A01M-TL-E uses the industry-standard SOT-323 (SC-70) package with 1–2–3 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches JEDEC MO-203-AB and is compatible with standard SOT-323 reflow profiles and pick-and-place tooling. The 30A01M-TL-E's mechanical dimensions (2.0 × 2.1 × 0.9 mm) and land pattern requirements align with IPC-7351B Class L recommendations for automated assembly.

How does the DC current gain (h_FE) of the 30A01M-TL-E vary with operating conditions?

The 30A01M-TL-E exhibits h_FE = 200–500 at V_CE = −2 V and I_C = −10 mA, with gain decreasing at higher currents and temperatures. At I_C = −100 mA, h_FE typically falls to 100–250. The 30A01M-TL-E's gain remains stable across −25°C to +75°C ambient, but degrades above 100°C junction temperature - requiring thermal design consideration in sustained high-current operation.

30A01M-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 300 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 220mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 10mA, 2V

Power - Max:: 300 mW

Frequency - Transition:: 520MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-MCP

30A01M-TL-E FAQ

1.How can I place an order for 30A01M-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 30A01M-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 30A01M-TL-E reliable?

The price and inventory of 30A01M-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 30A01M-TL-E is usually 5 days.

3.What payment methods are accepted for 30A01M-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 30A01M-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 30A01M-TL-E?

30A01M-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 30A01M-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 30A01M-TL-E?

For technical support, including 30A01M-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 30A01M-TL-E requirements.

6.How does Aetrix verify that 30A01M-TL-E is sourced from the original manufacturer or authorized distributors?

All 30A01M-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 30A01M-TL-E meets industry standards.

7.What is the process for return or replacement of 30A01M-TL-E?

All 30A01M-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 30A01M-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 30A01M-TL-E part is unused and in its original packaging.

Return procedure for 30A01M-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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