Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 30C02CH-TL-E

Name: 30C02CH-TL-E
Brand: onsemi
SKU: 30C02CH-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 30C02CH-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 30C02CH-TL-E.pdf

Description:: TRANS NPN 30V 0.7A 3-CPH

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:77

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

30C02CH-TL-E from onsemi is a low-V_CE(sat) NPN bipolar transistor in CPH3 (SOT-23) package, rated for 30 V V_CEO, 700 mA I_C, and 330 mΩ R_CE(sat) at I_C = 0.7 A / I_B = 35 mA. It delivers high-speed switching (t_on = 35 ns, t_f = 40 ns) and is used in small motor drive circuits requiring compact, efficient gain control.

For engineers reviewing the 30C02CH-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) ≤ 190 mV at I_C = 200 mA, h_FE range of 300–800 at I_C = 50 mA, f_T = 540 MHz, and CPH3 thermal performance on ceramic board (700 mW P_C).

Technical Context

This device operates as a single NPN switching amplifier with fixed-emitter bias topology. Its low R_CE(sat) and fast switching enable efficient current control in DC-DC pre-driver stages and PWM-driven loads.

Designed for ambient temperatures from –55°C to +150°C, it maintains stable h_FE across –25°C to +75°C and exhibits Cob = 3.3 pF at V_CB = 10 V, supporting high-frequency signal integrity in low-noise amplification paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage under open-base conditions; defines upper rail limit in 24 V motor drive rails.
I_C	700 mA - Continuous collector current rating; supports sustained 0.5 W load switching without derating on ceramic board.
V_CE(sat)	190 mV max @ I_C=200 mA, I_B=10 mA - Enables <0.04 W conduction loss per switch, critical for thermally constrained PCBs.
f_T	540 MHz - Gain-bandwidth product confirming usable AC response up to ~100 MHz in small-signal amplification.
h_FE	300–800 @ V_CE=2 V, I_C=50 mA - Wide DC gain range allows flexible base drive design with minimal external resistor tolerance sensitivity.
Cob	3.3 pF @ V_CB=10 V, f=1 MHz - Low output capacitance minimizes Miller effect in high-speed switching nodes.

Pinout & Package

30C02CH-TL-E uses the CPH3 package (JEITA SC-59 / JEDEC TO-236 / industry-standard SOT-23), measuring 2.9 × 1.6 × 0.95 mm with 0.95 mm lead pitch. Thermal resistance is optimized for mounting on ceramic board (600 mm² × 0.8 mm).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires ≥10 mA drive for full saturation at 700 mA load.
2	Emitter	Common reference terminal; tied to ground or low-side return path in low-side switch configurations.
3	Collector	High-current output node; connects to load anode or V_CC-side of motor winding in common-emitter topology.

Key Features

Feature	Design Value
Low V_CE(sat)	190 mV max ensures <40 mW conduction loss at 200 mA, reducing thermal stress in dense layouts.
Ultrasmall CPH3 footprint	2.9 × 1.6 mm outline enables placement in space-constrained motor driver IC footprints or sensor interface modules.
High f_T	540 MHz bandwidth supports clean edge fidelity in 1–5 MHz PWM gate drive buffering applications.
Robust thermal rating	Junction temperature limit of 150°C and 700 mW dissipation on ceramic board allow operation in sealed industrial enclosures.

Applications

Low-Frequency Amplifier	High-Speed Switching
Use Scenario: Audio pre-amplification stage in battery-powered instrumentation with <20 kHz signal bandwidth. IC Role / Device Role / Timing Role: NPN small-signal amplifier with h_FE ≥ 300 ensuring stable gain at 50 mA bias point. Use Value: Low V_BE(sat) (1.2 V max) reduces base drive power overhead; Cob = 3.3 pF avoids high-frequency roll-off below 100 kHz.	Use Scenario: PWM-controlled LED string dimming at 1–5 kHz in smart lighting modules. IC Role / Device Role / Timing Role: Low-side current switch with t_on/t_f ≤ 40 ns enabling precise duty-cycle control. Use Value: V_CE(sat) ≤ 190 mV limits heat generation during 100% duty cycle, eliminating need for heatsinking.
Small Motor Drive	Load Switching Interface
Use Scenario: Bidirectional brushed DC motor control in portable medical pumps (12 V, <500 mA). IC Role / Device Role / Timing Role: Half-bridge low-side switch with R_CE(sat) = 330 mΩ enabling <170 mW loss at full load. Use Value: Fast storage time (t_stg = 255 ns) prevents shoot-through in H-bridge complementary drive timing.	Use Scenario: Power sequencing control for FPGA I/O banks requiring discrete 3.3 V/5 V load enable. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) active-high load switch with 5 V logic-compatible base drive. Use Value: V_BR_EBO = 5 V ensures compatibility with standard CMOS logic outputs without level-shifting.

Low-Frequency Amplifier

High-Speed Switching

Use Scenario: Audio pre-amplification stage in battery-powered instrumentation with <20 kHz signal bandwidth.

IC Role / Device Role / Timing Role: NPN small-signal amplifier with h_FE ≥ 300 ensuring stable gain at 50 mA bias point.

Use Value: Low V_BE(sat) (1.2 V max) reduces base drive power overhead; Cob = 3.3 pF avoids high-frequency roll-off below 100 kHz.

Use Scenario: PWM-controlled LED string dimming at 1–5 kHz in smart lighting modules.

IC Role / Device Role / Timing Role: Low-side current switch with t_on/t_f ≤ 40 ns enabling precise duty-cycle control.

Use Value: V_CE(sat) ≤ 190 mV limits heat generation during 100% duty cycle, eliminating need for heatsinking.

Small Motor Drive

Load Switching Interface

Use Scenario: Bidirectional brushed DC motor control in portable medical pumps (12 V, <500 mA).

IC Role / Device Role / Timing Role: Half-bridge low-side switch with R_CE(sat) = 330 mΩ enabling <170 mW loss at full load.

Use Value: Fast storage time (t_stg = 255 ns) prevents shoot-through in H-bridge complementary drive timing.

Use Scenario: Power sequencing control for FPGA I/O banks requiring discrete 3.3 V/5 V load enable.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) active-high load switch with 5 V logic-compatible base drive.

Use Value: V_BR_EBO = 5 V ensures compatibility with standard CMOS logic outputs without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	V_CEO = 40 V, I_C = 200 mA, V_CE(sat) = 300 mV @ I_C = 50 mA - lower current capacity and higher saturation voltage.	Not suitable for 700 mA motor drive; limited to signal-level switching or low-power logic interfacing.	Select when only 50–100 mA load switching is required and higher V_CEO margin is prioritized over conduction loss.
DXT3904PSQ-13	V_CEO = 40 V, I_C = 600 mA, V_CE(sat) = 250 mV @ I_C = 500 mA - lower max current than 30C02CH-TL-E but tighter V_CE(sat) spec at mid-range loads.	Acceptable for 500 mA motor drivers but not rated for 700 mA continuous; lacks published f_T or Cob data.	Choose where 600 mA peak load suffices and SOT-23-3 pinout compatibility is mandatory; verify thermal performance on target board.

Compared with MMBT3904LT1G and DXT3904PSQ-13, the 30C02CH-TL-E uniquely combines 700 mA I_C, sub-200 mV V_CE(sat), and 540 MHz f_T in CPH3 - making it optimal for thermally constrained, high-efficiency 12–24 V motor and PWM load interfaces where both current headroom and speed matter.

Availability

30C02CH-TL-E is available at Aetrix Electronics and suitable for low-frequency amplifier, high-speed switching, and small motor drive applications requiring stable component supply, Pb-free compliance, and reel-based automated assembly.

Supply support for 30C02CH-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT systems.

The 30C02CH-TL-E belongs to onsemi's CPH-series low-V_CE(sat) bipolar transistor family, engineered specifically for compact, high-efficiency switching in space- and thermal-constrained DC motor, LED, and load control applications.

FAQ

What is the maximum continuous collector current for the 30C02CH-TL-E?

The 30C02CH-TL-E is rated for 700 mA continuous collector current (I_C) at T_a = 25°C when mounted on a ceramic board (600 mm² × 0.8 mm). Derating applies above 25°C ambient; at 75°C, I_C drops to approximately 500 mA per the PC–Ta curve. This rating ensures reliable operation in motor driver and power-switching roles without forced cooling.

Does the 30C02CH-TL-E have Pb-free and RoHS-compliant packaging?

Yes, the 30C02CH-TL-E is explicitly marked "Pb Free" in its ordering information and complies with RoHS Directive 2011/65/EU. The CPH3 package uses matte tin plating, and the embossed taping (TL-E variant) meets J-STD-020 moisture sensitivity level 1 (MSL-1), supporting standard reflow profiles without preconditioning.

What is the typical V_CE(sat) of the 30C02CH-TL-E at full-rated current?

The typical V_CE(sat) of the 30C02CH-TL-E is 330 mΩ (equivalent to ~230 mV) at I_C = 0.7 A and I_B = 35 mA, per the datasheet's R_CE(sat) specification. The absolute maximum V_CE(sat) is 190 mV at I_C = 200 mA / I_B = 10 mA - confirming strong saturation behavior even at lower drive levels.

Can the 30C02CH-TL-E replace a standard SOT-23 NPN transistor like the MMBT3904?

The 30C02CH-TL-E shares the same CPH3 (SOT-23) footprint and pinout (1=Base, 2=Emitter, 3=Collector) as the MMBT3904, but it is not a drop-in replacement due to higher current capability (700 mA vs. 200 mA) and lower V_CE(sat). Circuit redesign may be needed to leverage its full performance - especially base drive sizing and thermal layout - though mechanical fit is assured.

What is the junction-to-ambient thermal resistance (R_θJA) of the 30C02CH-TL-E?

The datasheet does not specify R_θJA directly, but provides PC = 700 mW at T_a = 25°C on a 600 mm² × 0.8 mm ceramic board. From this, R_θJA ≈ 214°C/W can be derived (ΔT = 150°C − 25°C = 125°C; 125°C ÷ 0.7 W ≈ 179°C/W minimum, but conservative estimate is ~200–220°C/W). For accurate thermal modeling, use the PC–Ta derating curve rather than assuming fixed R_θJA.

30C02CH-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 700 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 190mV @ 10mA, 200mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 50mA, 2V

Power - Max:: 700 mW

Frequency - Transition:: 540MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-CPH

30C02CH-TL-E FAQ

1.How can I place an order for 30C02CH-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 30C02CH-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 30C02CH-TL-E reliable?

The price and inventory of 30C02CH-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 30C02CH-TL-E is usually 5 days.

3.What payment methods are accepted for 30C02CH-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 30C02CH-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 30C02CH-TL-E?

30C02CH-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 30C02CH-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 30C02CH-TL-E?

For technical support, including 30C02CH-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 30C02CH-TL-E requirements.

6.How does Aetrix verify that 30C02CH-TL-E is sourced from the original manufacturer or authorized distributors?

All 30C02CH-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 30C02CH-TL-E meets industry standards.

7.What is the process for return or replacement of 30C02CH-TL-E?

All 30C02CH-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 30C02CH-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 30C02CH-TL-E part is unused and in its original packaging.

Return procedure for 30C02CH-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…