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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 30C02S-TL-E

Name: 30C02S-TL-E
Brand: onsemi
SKU: 30C02S-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 30C02S-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-75, SOT-416

Datasheet:: 30C02S-TL-E.pdf

Description:: TRANS NPN 30V 0.6A 3-SMCP

Quantity:: RFQ Add To RFQ list

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Inventory:15,000

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Product details

Overview

30C02S-TL-E from onsemi is a low-V_CE(sat) NPN bipolar transistor in MCPH3 (SC-70/SOT-323) package, rated for 30 V V_CEO, 700 mA I_C, and 330 mΩ R_CE(sat) at I_C = 0.7 A / I_B = 35 mA. It delivers high current gain (h_FE = 300–800 at I_C = 50 mA), 540 MHz f_T, and fast switching (t_on = 35 ns, t_f = 40 ns), enabling use in small motor drive and high-speed switching circuits.

For engineers reviewing the 30C02S-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 200–700 mA, h_FE stability across –25°C to +75°C, SC-70 thermal resistance on ceramic substrate, and Pb-free/halogen-free compliance per ordering code TL-E.

Technical Context

This NPN transistor uses epitaxial planar process technology optimized for low saturation voltage and high DC current gain. Its 540 MHz f_T supports operation up to low-MHz switching frequencies, while Cob = 3.3 pF at V_CB = 10 V enables predictable high-frequency response in amplifier and switch stages.

The device operates with V_BE(sat) = 0.9–1.2 V at I_C = 200 mA / I_B = 10 mA and exhibits tight V_CE(sat) distribution (85–190 mV under same conditions), making it suitable for precision current-sensing and battery-powered load control where voltage headroom is constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in 24 V rail switching.
I_C	700 mA - Continuous collector current; supports loads up to ~0.5 W dissipation on ceramic substrate.
V_CE(sat)	85–190 mV @ I_C=200 mA, I_B=10 mA - Low saturation voltage reduces conduction loss in power switches.
h_FE	300–800 @ V_CE=2 V, I_C=50 mA - High DC gain enables low-base-drive-current operation in discrete amplifier stages.
f_T	540 MHz - Gain-bandwidth product confirms suitability for RF preamp and fast digital switching up to ~50 MHz.
C_ob	3.3 pF @ V_CB=10 V, f=1 MHz - Low output capacitance minimizes Miller effect in high-speed switching nodes.
t_on/t_f	35 ns / 40 ns - Verified turn-on and fall times support PWM frequencies >5 MHz with minimal overlap loss.

Pinout & Package

MCPH3 package (JEITA/ JEDEC: SC-70, SOT-323) - ultrasmall surface-mount outline measuring 2.1 × 1.6 × 0.85 mm, optimized for space-constrained PCB layouts and automated placement.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node requiring 10–35 mA base drive to saturate at 700 mA collector current.
2	Emitter	Common reference terminal; connected to ground or low-side return path in switching configurations.
3	Collector	High-current output node; handles up to 700 mA continuous load with <190 mV drop at full rated current.

Key Features

Feature	Design Value
Low V_CE(sat)	Typical 135 mV at I_C = 0.7 A / I_B = 35 mA - reduces power loss by >40% vs. standard general-purpose transistors.
High h_FE	Min 300 at I_C = 50 mA - allows direct MCU GPIO drive without external buffer stage in low-power logic interfaces.
Fast switching	t_on = 35 ns, t_f = 40 ns - enables clean edge transitions in 5–10 MHz clocked drivers and PWM motor control.
Halogen-free & Pb-free	Compliant with JESD204B and RoHS - meets environmental requirements for industrial and consumer end equipment.

Applications

Small Motor Drive	Low-Frequency Amplifier
Use Scenario: Driving 3–12 V brushed DC motors in portable medical pumps and HVAC actuators. IC Role / Device Role / Timing Role: Low-side switch controlling motor current path with minimal voltage drop and thermal rise. Use Value: 135 mV typical V_CE(sat) preserves battery voltage margin and extends runtime in 2-cell Li-ion systems.	Use Scenario: Audio preamplifier stage in battery-powered instrumentation and sensor signal conditioning. IC Role / Device Role / Timing Role: Discrete NPN gain stage with stable h_FE across temperature for DC-coupled amplification. Use Value: 300–800 h_FE range ensures consistent gain without feedback trimming in production units.
High-Speed Switching	Load Switch for Embedded Control
Use Scenario: Digital output driver in PLC I/O modules switching solenoids and relays at 1–5 kHz. IC Role / Device Role / Timing Role: Fast-turning NPN switch synchronized to microcontroller PWM outputs. Use Value: 35 ns t_on and 40 ns t_f minimize dead-time distortion and improve duty-cycle fidelity.	Use Scenario: Power enable switch for peripheral ICs in IoT edge nodes with strict sleep-mode leakage budgets. IC Role / Device Role / Timing Role: Controlled load disconnect using base bias to isolate downstream circuitry. Use Value: ICBO ≤ 100 nA at V_CB = 30 V ensures <1 µA standby current in always-on system architectures.

Small Motor Drive

Low-Frequency Amplifier

Use Scenario: Driving 3–12 V brushed DC motors in portable medical pumps and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling motor current path with minimal voltage drop and thermal rise.

Use Value: 135 mV typical V_CE(sat) preserves battery voltage margin and extends runtime in 2-cell Li-ion systems.

Use Scenario: Audio preamplifier stage in battery-powered instrumentation and sensor signal conditioning.

IC Role / Device Role / Timing Role: Discrete NPN gain stage with stable h_FE across temperature for DC-coupled amplification.

Use Value: 300–800 h_FE range ensures consistent gain without feedback trimming in production units.

High-Speed Switching

Load Switch for Embedded Control

Use Scenario: Digital output driver in PLC I/O modules switching solenoids and relays at 1–5 kHz.

IC Role / Device Role / Timing Role: Fast-turning NPN switch synchronized to microcontroller PWM outputs.

Use Value: 35 ns t_on and 40 ns t_f minimize dead-time distortion and improve duty-cycle fidelity.

Use Scenario: Power enable switch for peripheral ICs in IoT edge nodes with strict sleep-mode leakage budgets.

IC Role / Device Role / Timing Role: Controlled load disconnect using base bias to isolate downstream circuitry.

Use Value: ICBO ≤ 100 nA at V_CB = 30 V ensures <1 µA standby current in always-on system architectures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	V_CEO = 40 V, I_C = 200 mA, V_CE(sat) = 300 mV @ I_C = 50 mA - lower current rating and higher saturation voltage.	Not suitable for 700 mA motor drive; limited to signal-level switching and low-power logic buffering.	Select when only 200 mA drive is needed and higher V_CEO margin is prioritized over conduction loss.
DXTN07000Z	V_CEO = 30 V, I_C = 700 mA, V_CE(sat) = 150 mV @ I_C = 0.5 A - similar current capability but 15% higher V_CE(sat) at full load.	Compatible in motor drive and switching roles, but requires derating above 500 mA for thermal management.	Choose if supply chain diversification is required and minor V_CE(sat) increase is acceptable in thermally constrained layouts.

Compared with MMBT3904LT1G and DXTN07000Z, the 30C02S-TL-E provides superior conduction efficiency at full 700 mA load due to its 135 mV typical V_CE(sat), tighter h_FE spread, and validated 540 MHz f_T - making it optimal for compact, high-efficiency discrete switching where thermal headroom and voltage margin are critical.

Availability

30C02S-TL-E is available at Aetrix Electronics and suitable for small motor drive, low-frequency amplifier, high-speed switching, and embedded load switch applications requiring stable component supply, Pb-free compliance, and SC-70 footprint consistency.

Supply support for 30C02S-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 30C02S-TL-E belongs to onsemi's low-V_CE(sat) NPN transistor family designed specifically for high-efficiency discrete switching in space- and power-constrained embedded systems.

FAQ

What is the maximum continuous collector current rating for the 30C02S-TL-E?

The 30C02S-TL-E is rated for 700 mA continuous collector current (I_C) at T_a = 25°C when mounted on a ceramic substrate (600 mm² × 0.8 mm). Derating applies above 25°C ambient, with PC dropping linearly to zero at 150°C junction temperature. This rating is confirmed in the Absolute Maximum Ratings table of the official datasheet.

Does the 30C02S-TL-E have halogen-free and Pb-free construction?

Yes, the 30C02S-TL-E is both Pb-free and halogen-free, as indicated by the "-E" suffix in the ordering code and explicitly stated in the Product & Package Information section. It complies with RoHS Directive 2011/65/EU and JESD204B material content standards.

What is the typical V_CE(sat) of the 30C02S-TL-E at full rated current?

The typical V_CE(sat) of the 30C02S-TL-E is 135 mV at I_C = 0.7 A and I_B = 35 mA, with a guaranteed max of 190 mV under those conditions. This value is specified in the Electrical Characteristics table and verified across production lots per onsemi's characterization data.

Can the 30C02S-TL-E be used as a direct replacement for the MMBT3904 in existing designs?

No - the 30C02S-TL-E is not a direct replacement for the MMBT3904 due to differences in current rating (700 mA vs. 200 mA), V_CE(sat) (135 mV vs. ~300 mV), and gain profile. While both are SC-70 NPN transistors, substituting requires validation of thermal margin, base drive capability, and switching timing in the target circuit.

What is the gain-bandwidth product (f_T) of the 30C02S-TL-E, and how is it measured?

The 30C02S-TL-E has a typical f_T of 540 MHz, measured at V_CE = 10 V and I_C = 50 mA per the Electrical Characteristics table. This parameter reflects the frequency at which short-circuit current gain drops to unity and confirms suitability for low-MHz switching and RF amplifier applications.

30C02S-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 190mV @ 10mA, 200mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 50mA, 2V

Power - Max:: 200 mW

Frequency - Transition:: 540MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-SMCP

30C02S-TL-E FAQ

1.How can I place an order for 30C02S-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 30C02S-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 30C02S-TL-E reliable?

The price and inventory of 30C02S-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 30C02S-TL-E is usually 5 days.

3.What payment methods are accepted for 30C02S-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 30C02S-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 30C02S-TL-E?

30C02S-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 30C02S-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 30C02S-TL-E?

For technical support, including 30C02S-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 30C02S-TL-E requirements.

6.How does Aetrix verify that 30C02S-TL-E is sourced from the original manufacturer or authorized distributors?

All 30C02S-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 30C02S-TL-E meets industry standards.

7.What is the process for return or replacement of 30C02S-TL-E?

All 30C02S-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 30C02S-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 30C02S-TL-E part is unused and in its original packaging.

Return procedure for 30C02S-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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