Renesas 3P4MH(10)-AZ

Overview

3P4MH(10)-AZ from Renesas Electronics is a 3 A average on-state current, 400 V repetitive peak off-state voltage P-gate fully diffused molded SCR in TO-202AA package, rated for 125°C junction temperature and featuring 0.8 V gate trigger voltage and 1.6 V on-state voltage at 10 A, used in noncontact switching for consumer electronics and light industrial equipment.

For engineers reviewing the 3P4MH(10)-AZ datasheet, 3P4MH(10)-AZ pinout, 3P4MH(10)-AZ application, or 3P4MH(10)-AZ equivalent, key selection criteria include verified dV/dt immunity (3 V/µs at 125°C), commutating turn-off time (80 µs), holding current range (1–5 mA), and thermal resistance (8 °C/W junction-to-case), all critical for reliable phase-control and AC load switching designs.

Technical Context

The 3P4MH(10)-AZ operates as a unidirectional thyristor with gate-controlled turn-on and natural commutation via current zero-crossing. Its P-gate fully diffused structure ensures stable triggering across temperature (−40°C to +125°C) and low gate trigger current (≤0.2 mA) under 6 V gate-cathode bias.

It supports single half-wave AC operation with 3 A average on-state current at Tc = 87°C and withstands non-repetitive surge currents up to 65 A (50 Hz, 1-cycle sine). Critical dV/dt rating of 3 V/µs at 125°C prevents false turn-on during fast transients in inductive loads.

Key Specifications

Pinout & Package

3P4MH(10)-AZ uses the TO-202AA molded package (standard weight: 1.4 g), flame-retardant epoxy resin (UL94V-0), with leads formed for PCB mounting or heatsink tablet attachment using jigs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR switching applications.

Compared with STMicroelectronics TS3A40 and ON Semiconductor 2N6504, the 3P4MH(10)-AZ offers optimal balance of low gate drive demand, proven dV/dt immunity, and TO-202AA mechanical compatibility-making it ideal for cost-sensitive, thermally constrained noncontact switching where precise zero-crossing timing and minimal BOM count are priorities.

Availability

3P4MH(10)-AZ is available at Aetrix Electronics and suitable for AC lamp dimming, small appliance motor control, and industrial solenoid drivers requiring stable component supply and long-term industrial availability.

Supply support for 3P4MH(10)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The 3P4MH(10)-AZ belongs to Renesas' legacy thyristor product line designed specifically for robust, low-cost AC power control in consumer and light industrial equipment-prioritizing manufacturability, thermal stability, and gate sensitivity over ultra-high-speed switching.

FAQ

What is the maximum junction temperature rating for the 3P4MH(10)-AZ?

The 3P4MH(10)-AZ has a specified junction temperature range of −40°C to +125°C. This rating is confirmed in the Absolute Maximum Ratings table of the official Renesas datasheet D13533EJ3V0DS. Operation beyond +125°C risks irreversible parametric shift or thermal runaway. Derating curves in Figure 11 show that average on-state current must be reduced to 2.1 A at Tc = 100°C to maintain safe junction temperature. The 3P4MH(10)-AZ must be mounted on an appropriate heatsink to sustain continuous 3 A operation.

Does the 3P4MH(10)-AZ support DC switching applications?

The 3P4MH(10)-AZ is a conventional SCR and cannot self-commutate in DC circuits-it requires external circuitry (e.g., forced commutation, reverse-biased capacitor discharge, or auxiliary switch) to reset conduction. Its datasheet specifies parameters only for AC half-wave operation (θ = 180°) and does not guarantee reliable turn-off under pure DC conditions. For DC load control, consider a MOSFET or IGBT instead. The 3P4MH(10)-AZ is optimized for AC phase-control and zero-crossing switching, not DC interruption.

What is the gate trigger voltage specification for the 3P4MH(10)-AZ?

The gate trigger voltage (VGT) for the 3P4MH(10)-AZ is guaranteed ≤0.8 V under test conditions of VDM = 6 V and RL = 100 Ω at Tj = 25°C, per the Electrical Characteristics table in datasheet D13533EJ3V0DS. This low VGT enables direct drive from 3.3 V or 5 V logic outputs or optocouplers like MOC3021 without level-shifting. At elevated temperature (125°C), VGT may increase slightly but remains within usable range for standard gate drivers. The 3P4MH(10)-AZ does not require external gate resistors for basic triggering.

Is the 3P4MH(10)-AZ RoHS compliant?

Yes, the 3P4MH(10)-AZ complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation and material declarations. The device uses lead-free terminations and halogen-free molding compound meeting RoHS Annex II substance restrictions. No exemptions apply. Renesas confirms RoHS status for this part in its "Environmental Data" portal and Product Change Notices (PCNs) issued after April 2010. Customers should reference Renesas document Q-2010-001 for full substance declaration and test reports for the 3P4MH(10)-AZ.

What is the thermal resistance from junction to case for the 3P4MH(10)-AZ?

The junction-to-case thermal resistance (Rth(j-c)) of the 3P4MH(10)-AZ is 8 °C/W, measured under DC conditions as stated in the Absolute Maximum Ratings table of datasheet D13533EJ3V0DS. This value assumes proper mechanical mounting to a flat, clean heatsink surface with recommended torque and thermal interface material. It enables accurate calculation of junction temperature rise: Tj = Tc + (Pd × 8), where Pd is power dissipation. The 3P4MH(10)-AZ's TO-202AA package relies on case conduction-not ambient convection-for primary heat transfer.