Renesas 3P4MH(13)-S13-AZ

Overview

3P4MH(13)-S13-AZ from Renesas Electronics is a 3 A average on-state current, 400 V repetitive peak off-state voltage silicon-controlled rectifier (SCR) in TO-202AA package. It features 1.6 V typical on-state voltage at 10 A, 0.2 mA gate trigger current, and 80 µs commutating turn-off time. Used in noncontact switching for consumer electronics, lighting controls, and small industrial equipment.

For engineers reviewing the 3P4MH(13)-S13-AZ datasheet, 3P4MH(13)-S13-AZ pinout, 3P4MH(13)-S13-AZ application, or 3P4MH(13)-S13-AZ equivalent, key selection criteria include repetitive peak off-state voltage (VDRM = 400 V), critical dV/dt rating (3 V/µs at 125°C), thermal resistance (Rth(j-c) = 8 °C/W), and gate sensitivity (VGT ≤ 0.8 V).

Technical Context

The 3P4MH(13)-S13-AZ is a P-gate, fully diffused mold SCR optimized for phase-control and AC switching applications. Its design supports single half-wave conduction with IT(AV) = 3 A at Tc = 87°C and θ = 180°, and delivers stable triggering with IGTM ≤ 0.2 mA and VGT ≤ 0.8 V under standard test conditions (VDM = 6 V, RL = 100 Ω).

It operates across −40°C to +125°C junction temperature and maintains low leakage: IDRM ≤ 100 µA at 25°C and ≤ 2 mA at 125°C. The device exhibits dIT/dt capability of 50 A/µs and withstands non-repetitive surge currents up to 65 A (50 Hz, 1 cycle), making it suitable for transient-tolerant line-powered control circuits.

Key Specifications

Pinout & Package

3P4MH(13)-S13-AZ is housed in a flame-retardant epoxy TO-202AA molded package (UL94V-0), with standard weight 1.4 g and electrode configuration: Pin 1 = Cathode, Pin 2 = Anode, Pin 3 = Gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR switching applications.

Compared with 3P4MH(13)-S13-AZ, TS310-400 offers superior thermal dissipation but demands layout change, while 2N6504 fits same footprint but restricts use to lower-voltage systems and increases gate drive burden.

Availability

3P4MH(13)-S13-AZ is available at Aetrix Electronics and suitable for lighting dimmer control, AC motor speed regulation, and noncontact appliance switching requiring stable component supply and long-term industrial availability.

Supply support for 3P4MH(13)-S13-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete devices.

The 3P4MH(13)-S13-AZ belongs to Renesas' legacy thyristor product line designed for cost-sensitive, reliability-focused AC power control in consumer and industrial equipment.

FAQ

What is the maximum junction temperature rating for the 3P4MH(13)-S13-AZ?

The 3P4MH(13)-S13-AZ has a specified junction temperature range of −40°C to +125°C. This rating allows operation in demanding environments such as enclosed lighting fixtures or motor control enclosures. Thermal design must ensure that under worst-case conduction and ambient conditions, the die temperature does not exceed +125°C-verified using Rth(j-c) = 8 °C/W and measured case temperature. Exceeding this limit risks parametric shift and accelerated failure.

Can the 3P4MH(13)-S13-AZ be directly driven by a 3.3 V microcontroller GPIO?

Yes-the 3P4MH(13)-S13-AZ can be directly driven by a 3.3 V microcontroller GPIO when used with a series current-limiting resistor. With VGT ≤ 0.8 V and IGT ≤ 0.2 mA, even a 10 kΩ resistor yields ~0.33 mA gate current at 3.3 V, well above threshold. However, noise immunity requires local RC filtering (e.g., 100 Ω + 100 nF) and short trace routing. For robust designs, an optocoupler like MOC3021 is recommended for mains isolation.

What is the surge current rating of the 3P4MH(13)-S13-AZ and how is it defined?

The 3P4MH(13)-S13-AZ has a non-repetitive surge on-state current rating of 65 A for one 50 Hz sine half-wave cycle. This value reflects short-duration overload capability during motor startup or lamp inrush. It is not repeatable without cooling interval-per Figure 2 in the datasheet, repeated surges require ≥1 second between pulses. Designers must ensure fusing and upstream protection coordinate with this rating to avoid nuisance tripping while maintaining fault coverage.

Does the 3P4MH(13)-S13-AZ meet RoHS requirements?

Yes-the 3P4MH(13)-S13-AZ complies with the EU RoHS Directive (2011/65/EU) as confirmed by Renesas Electronics' environmental compliance documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. Material declarations and substance data sheets are available upon request from Renesas or authorized distributors for full supply chain traceability.

How does the commutating turn-off time (Tq) affect phase-control circuit design for the 3P4MH(13)-S13-AZ?

The 3P4MH(13)-S13-AZ has a maximum commutating turn-off time (Tq) of 80 µs, which determines the minimum off-time needed after current zero-crossing before retriggering. In 50 Hz AC systems, this allows firing angles down to ~180° − (80 µs × 50 Hz × 360°) ≈ 179.9°, supporting fine-grained dimming resolution. Circuits must ensure natural commutation occurs-i.e., load current falls below holding current (IH ≤ 5 mA)-and avoid premature retriggering that causes misfiring or latch-up.