Renesas 3P4MH(5)-AZ

Overview

3P4MH(5)-AZ from Renesas Electronics is a 3 A average on-state current, 400 V repetitive peak off-state voltage silicon-controlled rectifier (SCR) in a TO-202AA molded package with P-gate fully diffused construction. It features 1.6 V typical on-state voltage at 10 A, 0.2 mA maximum gate trigger current, and 80 µs commutating turn-off time at 125°C - optimized for noncontact switching in consumer audio and lighting equipment.

For engineers reviewing the 3P4MH(5)-AZ datasheet, 3P4MH(5)-AZ pinout, 3P4MH(5)-AZ application, or 3P4MH(5)-AZ equivalent, key selection criteria include verified dV/dt immunity (≥3 V/µs), thermal resistance (8 °C/W junction-to-case), and gate sensitivity under 100 Ω load - critical for reliable triggering in low-power control circuits.

Technical Context

This SCR operates as a latching unidirectional power switch requiring gate-triggered conduction initiation and natural commutation via current zero-crossing. Its fully diffused P-gate structure ensures stable turn-on characteristics across temperature, with validated 0.8 V maximum gate trigger voltage and 2 mA reverse leakage at 125°C.

Designed for single-phase AC line control, it supports surge on-state current up to 65 A (50 Hz, half-wave), fusing ∫i²t rating of 20 A²s, and critical dIT/dt capability of 50 A/µs - enabling robust operation in inductive load environments without external snubbers in many cases.

Key Specifications

Pinout & Package

3P4MH(5)-AZ uses a TO-202AA molded plastic package with three leads: anode (A), cathode (K), and gate (G). The case serves as the cathode terminal; lead assignment follows standard SCR orientation with <1> = Cathode, <2> = Anode, <3> = Gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR switching applications.

Compared with STMicroelectronics TS3A40 and ON Semiconductor 2N6027, the 3P4MH(5)-AZ offers superior gate sensitivity (0.2 mA I_GT) and certified flame-retardant packaging in a compact TO-202AA form factor - making it optimal for space-constrained, safety-compliant AC line switching where minimal gate drive energy is critical.

Availability

3P4MH(5)-AZ is available at Aetrix Electronics and suitable for AC lighting dimmers, audio equipment power switches, and small appliance motor controls requiring stable component supply and long-term industrial availability.

Supply support for 3P4MH(5)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete devices.

The 3P4MH(5)-AZ belongs to Renesas' legacy thyristor product line designed specifically for cost-effective, reliability-focused AC power control in consumer and industrial equipment operating within Standard quality grade requirements.

FAQ

What is the maximum junction temperature specification for the 3P4MH(5)-AZ?

The 3P4MH(5)-AZ has a specified junction temperature range of −40°C to +125°C. This rating is validated under conditions of 3 A average on-state current at case temperature T_c = 87°C. Operation beyond 125°C risks irreversible parametric shift and premature failure; thermal design must ensure R_th(j-c) × P_loss + T_c ≤ 125°C. Derating curves in Figure 11 of the original datasheet confirm safe operation down to −40°C ambient.

Does the 3P4MH(5)-AZ support DC switching applications?

The 3P4MH(5)-AZ can conduct DC current once triggered, but cannot self-commutate - it requires external circuitry (e.g., forced commutation, series switch, or current interruption) to turn off. Its 80 µs t_q is specified for AC commutation at 50/60 Hz. For pure DC loads, designers must implement active turn-off mechanisms; the device is not rated for DC-rated switching duty cycles without auxiliary circuitry.

What is the gate trigger voltage requirement for reliable operation of the 3P4MH(5)-AZ?

The 3P4MH(5)-AZ specifies a maximum gate trigger voltage V_GT of 0.8 V under test conditions of V_DM = 6 V and R_L = 100 Ω. This low threshold enables compatibility with CMOS logic outputs and optocoupler drivers without level-shifting. Actual triggering occurs reliably at ≥0.6 V with adequate current (>0.2 mA); exceeding 6 V gate voltage risks permanent gate junction damage.

Is the 3P4MH(5)-AZ RoHS compliant?

Yes, the 3P4MH(5)-AZ complies with the EU RoHS Directive (2011/65/EU) as confirmed by Renesas Electronics' environmental documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. Lead-free soldering profiles per J-STD-020 are supported, and the UL94V-0 epoxy resin is halogen-free.

How does the 3P4MH(5)-AZ differ from the 3P6MH variant?

The 3P4MH(5)-AZ and 3P6MH share identical package, thermal, and gate characteristics but differ in voltage rating: 3P4MH(5)-AZ is rated for 400 V repetitive peak off-state voltage (V_DRM/V_RRM), while 3P6MH is rated for 600 V. Both have 3 A I_T(AV), but the 3P6MH exhibits higher non-repetitive peak ratings (700 V vs. 500 V) and 70 A I_TSM (60 Hz) vs. 65 A (50 Hz) for the 3P4MH(5)-AZ - making the latter optimized for 230 V AC systems and the former for 400 V industrial lines.