Renesas 3P4MH(9)-AZ

Overview

3P4MH(9)-AZ from Renesas Electronics is a 3 A average on-state current, 400 V repetitive peak off-state voltage (V_DRM) and reverse voltage (V_RRM) P-gate fully diffused molded SCR in TO-202AA package, designed for noncontact switching in consumer electronics, audio equipment, and light industrial controls.

For engineers reviewing the 3P4MH(9)-AZ datasheet, 3P4MH(9)-AZ pinout, 3P4MH(9)-AZ application, or 3P4MH(9)-AZ equivalent, key selection criteria include its 80 µs commutating turn-off time (t_q), 50 A/µs critical dI/dt rating, 1.6 V on-state voltage at 10 A, gate trigger current ≤0.2 mA, and junction-to-case thermal resistance of 8 °C/W.

Technical Context

The 3P4MH(9)-AZ operates as a unidirectional silicon-controlled rectifier with P-gate structure and full diffusion process, enabling reliable phase-controlled AC switching. Its design supports single half-wave conduction with T_c = 87°C derating and requires external gate triggering via resistive load (R_L = 100 Ω) at V_DM = 6 V.

It features inherent latching behavior after turn-on, with holding current between 1–5 mA and gate non-trigger voltage ≥2 V at 125°C to prevent false triggering. The device meets UL94V-0 flammability standard using flame-retardant epoxy resin encapsulation.

Key Specifications

Pinout & Package

Package: TO-202AA (standard 3-lead molded plastic case, 1.4 g typical weight, UL94V-0 compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR switching applications.

Compared with ST3P04 and BT169G, the 3P4MH(9)-AZ offers optimal balance of 3 A current rating, TO-202AA mountability, 80 µs turn-off time, and low gate drive demand-making it ideal for cost-sensitive, space-constrained AC control where full 4 A capacity is unnecessary.

Availability

3P4MH(9)-AZ is available at Aetrix Electronics and suitable for noncontact switches in consumer electronics, audio equipment, and light industrial equipment requiring stable component supply and long-term manufacturability.

Supply support for 3P4MH(9)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete devices.

The 3P4MH(9)-AZ belongs to Renesas' legacy thyristor product line targeting cost-effective, robust AC power control in standard-grade industrial and consumer applications.

FAQ

What is the maximum junction temperature specification for the 3P4MH(9)-AZ?

The 3P4MH(9)-AZ has a specified junction temperature range of −40°C to +125°C. This rating is confirmed in the Absolute Maximum Ratings table of the official Renesas datasheet D13533EJ3V0DS. Operation beyond +125°C risks irreversible degradation of the P-gate diffusion structure and increased leakage current. Derating curves in Figure 11 show that the 3 A average current rating applies only at T_c = 87°C, requiring appropriate heatsinking to maintain safe 3P4MH(9)-AZ junction temperatures under load.

Does the 3P4MH(9)-AZ support bidirectional AC switching?

No, the 3P4MH(9)-AZ is a unidirectional SCR and conducts current only from anode to cathode when triggered. For full AC waveform control (e.g., light dimming), it must be used in conjunction with an external diode or paired with a second SCR in anti-parallel configuration. The device's 400 V V_RRM and V_DRM ratings apply separately to reverse and forward blocking-unlike TRIACs, the 3P4MH(9)-AZ cannot block or conduct in reverse direction without external circuitry.

What is the gate trigger sensitivity of the 3P4MH(9)-AZ under standard test conditions?

Under standard test conditions (V_DM = 6 V, R_L = 100 Ω, T_j = 25°C), the 3P4MH(9)-AZ has a maximum gate trigger current (I_GT) of 0.2 mA and maximum gate trigger voltage (V_GT) of 0.8 V. These values are measured and guaranteed per the Electrical Characteristics table in the Renesas datasheet. This high sensitivity allows direct drive from low-power sources such as optocouplers or microcontroller outputs with minimal series resistance-ensuring reliable turn-on of the 3P4MH(9)-AZ even with marginal gate drive margins.

Can the 3P4MH(9)-AZ be used without a heatsink in low-duty-cycle applications?

Yes-when operated below 1 A average current and with sufficient ambient airflow or copper pour, the 3P4MH(9)-AZ may function without an external heatsink due to its 75 °C/W junction-to-ambient thermal resistance (R_th(j-a)). However, the 8 °C/W junction-to-case value indicates that heatsinking significantly improves reliability. For continuous 3 A operation, a heatsink is mandatory to limit junction temperature; the 3P4MH(9)-AZ datasheet specifies T_c = 87°C as the reference case temperature for its rated current, confirming thermal management is essential for full-rated use of the 3P4MH(9)-AZ.

Is the 3P4MH(9)-AZ RoHS compliant?

Yes, the 3P4MH(9)-AZ is RoHS compliant. Renesas Electronics confirms environmental compliance-including EU RoHS Directive adherence-in its general product policy statements and material declarations. While the original 2002 datasheet predates RoHS enforcement, Renesas' post-merger documentation and current product status confirm that legacy devices like the 3P4MH(9)-AZ manufactured after July 2006 meet RoHS requirements unless explicitly marked otherwise. No leaded variants or exemptions apply to the standard 3P4MH(9)-AZ offered by Aetrix Electronics.