Renesas 3P4MH(DM)-AZ

Overview

3P4MH(DM)-AZ from Renesas Electronics is a 3 A average on-state current, 400 V repetitive peak off-state voltage (V_DRM) and reverse voltage (V_RRM) silicon-controlled rectifier (SCR) in TO-202AA package. It features 1.6 V maximum on-state voltage at 10 A, 0.2 mA gate trigger current, and 80 µs commutating turn-off time - optimized for noncontact switching in consumer and light industrial equipment.

For engineers reviewing the 3P4MH(DM)-AZ datasheet, 3P4MH(DM)-AZ pinout, 3P4MH(DM)-AZ application, or 3P4MH(DM)-AZ equivalent, key selection criteria include verified dV/dt immunity (3 V/µs), junction-to-case thermal resistance (8 °C/W), gate non-trigger voltage margin (≥2 V at 125°C), and UL94V-0 flame-retardant epoxy encapsulation.

Technical Context

The 3P4MH(DM)-AZ is a P-gate fully diffused mold SCR designed for phase-control and AC switching applications. Its gate trigger characteristics (IGT ≤ 0.2 mA, VGT ≤ 0.8 V) enable reliable low-power triggering with standard TTL/CMOS-compatible drivers, while its critical rate-of-rise of off-state voltage (dV/dt ≥ 3 V/µs at 125°C) ensures noise immunity in noisy line-powered environments.

Thermal performance is defined by DC junction-to-case resistance of 8 °C/W and a maximum junction temperature of +125°C, supporting operation under continuous conduction with heatsink mounting. The device uses a standardized three-terminal electrode configuration: Cathode (Pin 1), Anode (Pin 2), Gate (Pin 3), with no internal protection diodes or integrated snubbers.

Key Specifications

Pinout & Package

Package: TO-202AA (standardized 3-lead molded plastic package, UL94V-0 rated, 1.4 g typical weight). Mounting via lead-forming jigs or heatsink tablet compatible with industry-standard TO-202 fixtures.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR switching applications.

Compared with ST3P4M and 2N6504, the 3P4MH(DM)-AZ offers optimal balance of low gate drive requirement (0.2 mA), TO-202AA compactness, and proven dV/dt immunity - making it preferred for space-constrained, low-power-control consumer designs where layout reuse and thermal simplicity are critical.

Availability

3P4MH(DM)-AZ is available at Aetrix Electronics and suitable for AC motor speed control, light dimming circuits, noncontact appliance switches, and industrial heater control requiring stable component supply and long-term manufacturing continuity.

Supply support for 3P4MH(DM)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The 3P4MH(DM)-AZ belongs to Renesas' legacy high-reliability thyristor product line, engineered specifically for cost-sensitive, safety-certified AC power switching in Standard-grade applications including home appliances and light industrial controls.

FAQ

What is the maximum junction temperature specification for the 3P4MH(DM)-AZ?

The 3P4MH(DM)-AZ has a specified maximum junction temperature (T_j) of +125°C. This rating applies under all operating conditions defined in the absolute maximum ratings table, including at full average on-state current (3 A) with appropriate heatsinking. Operation beyond this temperature risks irreversible degradation of the P-N-P-N structure and must be avoided in design.

Does the 3P4MH(DM)-AZ require a heatsink for 3 A continuous operation?

Yes - the 3P4MH(DM)-AZ requires a heatsink for 3 A continuous conduction. With a junction-to-case thermal resistance of 8 °C/W and a maximum junction temperature of +125°C, even at 25°C ambient, self-heating exceeds safe limits without thermal management. A minimum 12 cm² aluminum heatsink is recommended to maintain T_c ≤ 87°C per the I_T(AV) rating condition.

Can the 3P4MH(DM)-AZ be directly driven by a 3.3 V microcontroller GPIO pin?

Yes - the 3P4MH(DM)-AZ can be directly driven by a 3.3 V microcontroller GPIO pin when used with an appropriate series gate resistor (e.g., 220 Ω). Its gate trigger current (I_GT) is ≤ 0.2 mA and gate trigger voltage (V_GT) is ≤ 0.8 V at 25°C, well within the sourcing capability of most 3.3 V MCUs. Confirm gate drive remains within I_FGM (1 A peak) and P_GM (2 W) limits during transient conditions.

Is the 3P4MH(DM)-AZ RoHS compliant?

Yes - the 3P4MH(DM)-AZ complies with the EU RoHS Directive. Renesas Electronics confirms that this device contains no restricted substances above allowable thresholds, consistent with its classification as a Standard-grade product intended for consumer and industrial equipment. Full compliance documentation is available upon request from Aetrix Electronics or Renesas.

What is the commutating turn-off time (T_q) specification for the 3P4MH(DM)-AZ, and why does it matter?

The commutating turn-off time (T_q) for the 3P4MH(DM)-AZ is ≤ 80 µs under specified test conditions (T_j = 125°C, I_T = 3 A, dI_R/dt = 15 A/µs). This parameter defines the minimum time required for the device to regain blocking capability after current interruption - critical for designing reliable forced-commutation circuits such as line-commutated inverters or chopper-based AC controllers.