Renesas 3SK323UG-TL-E

Overview

3SK323UG-TL-E from Renesas is a silicon N-channel dual-gate MOSFET designed for UHF RF low-noise amplification, featuring 1.0 dB typical noise figure at 900 MHz, 24 dB typical power gain at 900 MHz, 3.5 V operating drain-source voltage, 6 V maximum drain-source voltage, and MPAK-4 surface-mount package. It serves as the first-stage LNA in portable UHF receivers including cordless phones and wireless microphones.

For engineers reviewing the 3SK323UG-TL-E datasheet, 3SK323UG-TL-E pinout, 3SK323UG-TL-E application, or 3SK323UG-TL-E equivalent, key selection criteria include UHF noise performance, dual-gate bias flexibility, low-voltage operation capability, and thermal derating on glass-epoxy PCBs.

Technical Context

This dual-gate MOSFET uses independent gate control to optimize noise figure and gain simultaneously: Gate1 sets transconductance and cutoff behavior while Gate2 adjusts channel conductance and stabilizes DC operating point. Its RF performance is characterized at 900 MHz with 50 Ω input/output impedance, requiring external matching networks per the documented test circuit.

The device operates with V_DS = 3.5 V and I_D = 10 mA under standard RF characterization conditions, achieving 24 dB power gain and 1.0 dB noise figure. Thermal limits are defined for a 50 mm × 40 mm × 1 mm glass-epoxy board, with 300 mW channel power dissipation derated above 50°C ambient.

Key Specifications

Pinout & Package

Package: MPAK-4 (RENESAS code PLSP0004ZA-A), surface-mount, 4-terminal plastic package with 1.35 mm body width and 0.35 mm lead pitch; marking "UG-" on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET UHF LNA applications.

Compared with NE3210S and BF998, the 3SK323UG-TL-E offers balanced 1.0 dB NF and 24 dB PG at 3.5 V, with MPAK-4 thermal performance optimized for handheld PCB layouts - making it ideal for cost-sensitive, battery-powered UHF receivers where supply voltage and board area are tightly constrained.

Availability

3SK323UG-TL-E is available at Aetrix Electronics and suitable for portable cordless phones, wireless microphone receivers, and UHF RFID readers requiring stable component supply across production lifecycles.

Supply support for 3SK323UG-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and RF components for industrial, automotive, and consumer applications.

The 3SK323UG-TL-E belongs to Renesas' legacy UHF RF transistor product line, engineered specifically for low-noise, low-voltage amplification in portable wireless communication equipment operating near 900 MHz.

FAQ

What is the recommended bias configuration for minimum noise figure in the 3SK323UG-TL-E?

For minimum noise figure, set V_DS = 3.5 V, I_D = 10 mA, and V_G2S = 3.0 V per the datasheet's 900 MHz NF test condition; V_G1S is then adjusted to achieve target ID, typically ~0.6 V. The 3SK323UG-TL-E achieves 1.0 dB NF under this exact configuration, and deviation increases NF by up to 0.6 dB.

Can the 3SK323UG-TL-E operate reliably at 2 GHz?

The 3SK323UG-TL-E maintains usable gain up to 2 GHz, with MSG = 15 dB at 2 GHz under V_DS = 3.5 V and V_G2S = 3.0 V, but NF degrades to ~2.5 dB and PG drops to ~12 dB. It is qualified and characterized for 900 MHz operation; use at 2 GHz requires full system-level validation of stability and noise performance.

What is the thermal resistance (R_θJA) of the 3SK323UG-TL-E in its MPAK-4 package?

Renesas does not publish R_θJA as a standalone parameter for the 3SK323UG-TL-E. Instead, the datasheet specifies maximum channel power dissipation (300 mW) on a defined 50 mm × 40 mm × 1 mm glass-epoxy board. Derating begins at 50°C ambient, reaching zero dissipation at 150°C channel temperature - implying an effective R_θJA ≈ 333°C/W under those exact board conditions.

Is the 3SK323UG-TL-E pin-compatible with the 3SK324UG-TL-E?

No - although both share the MPAK-4 package and identical pinout (Source, Gate1, Gate2, Drain), the 3SK324UG-TL-E has different electrical characteristics: higher |y_fs (50 mS vs. 42 mS), higher PG (26 dB vs. 24 dB), and higher NF (1.2 dB vs. 1.0 dB). They are not drop-in replacements; circuit re-tuning is required for equivalent performance.

Does the 3SK323UG-TL-E require external ESD protection?

Yes - the 3SK323UG-TL-E has no integrated ESD protection diodes. Absolute maximum ratings specify ±6 V for gate-source voltages; exposure to >±100 nA gate leakage beyond that risks permanent damage. External series resistors (≥1 kΩ) and shunt TVS diodes rated ≤6 V are recommended on both Gate1 and Gate2 lines in production designs using the 3SK323UG-TL-E.