Microchip Technology 47L64T-I/MNY

Overview

47L64T-I/MNY from Microchip Technology Inc. is a 64-Kbit serial EERAM combining an 8,192 × 8-bit SRAM core with integrated cell-based EEPROM backup, operating over I²C at up to 1 MHz, with 2.7V–3.6V supply, industrial temperature range (−40°C to +85°C), and automatic power-loss data retention via VCAP-triggered store/recall. It serves as nonvolatile SRAM in real-time data logging systems where write endurance and zero-software-overhead persistence are critical.

For engineers reviewing the 47L64T-I/MNY datasheet, 47L64T-I/MNY pinout, 47L64T-I/MNY application, or 47L64T-I/MNY equivalent, key selection considerations include I²C timing compliance (100/400/1000 kHz), VCAP capacitor sizing (10–50 µF), WP-enabled memory protection, Schmitt-trigger noise immunity on SDA/SCL, and AutoStore endurance (100,000 cycles) versus recall latency (≤550 µs).

Technical Context

The 47L64T-I/MNY implements a dual-memory architecture: a fully symmetrical, unlimited-read/write SRAM array backed by invisible, parallel cell-for-cell EEPROM. Its internal voltage monitor (VTRIP = 2.3–2.65 V) triggers autonomous store/recall when VCAP crosses threshold, eliminating host firmware intervention.

It uses standard I²C protocol with slave addressing via A1/A2 pins (supporting up to four devices per bus), open-drain SDA requiring external pull-up, and hardware write-protection for upper 1/4 memory (0x6000–0x7FFF). All operations-read, write, store, recall-are governed by strict AC timing (e.g., TAA ≤ 550 ns, THD:STA ≥ 250 ns) and DC specs (ICC ≤ 1 mA active, ICCS ≤ 200 µA standby).

Key Specifications

Pinout & Package

47L64T-I/MNY is packaged in an 8-lead TDFN (3 mm × 2 mm) with exposed thermal pad (EP), pin-compatible with 8-lead SOIC but offering improved thermal performance and board space savings.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar EERAM applications.

Compared with 47L64T-I/MNY, the SOIC variant 47L64-I/SN offers identical functionality in a larger footprint ideal for manual assembly, while FM24V06-G trades autonomous backup for faster writes and zero capacitor dependency - making it suitable only where host-controlled persistence is acceptable.

Availability

47L64T-I/MNY is available at Aetrix Electronics and suitable for industrial data loggers, smart meter firmware storage, PLC configuration memory, and medical device event logs requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for 47L64T-I/MNY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a U.S.-based semiconductor manufacturer specializing in microcontrollers, analog devices, and memory solutions, with global design, manufacturing, and support infrastructure.

The 47L64T-I/MNY belongs to Microchip's EERAM product line, engineered specifically for applications demanding SRAM-like performance with EEPROM-level nonvolatility - eliminating battery dependencies and firmware complexity in mission-critical embedded systems.

FAQ

What is the function of the VCAP pin on the 47L64T-I/MNY?

The VCAP pin on the 47L64T-I/MNY connects to an external 10–50 µF capacitor that supplies energy for autonomous SRAM-to-EEPROM store operations during VCC brown-out. When VCC drops below VTRIP (2.3–2.65 V), the device switches power from VCC to VCAP, enabling complete 8,192-byte backup without host involvement. The capacitor is charged from VCC during normal operation and must be placed directly between VCAP and VSS.

How does write protection work on the 47L64T-I/MNY?

When the WP pin on the 47L64T-I/MNY is driven high, writes to the upper 1/4 of the SRAM array (addresses 0x6000–0x7FFF) are blocked. Attempts to write there return ACK for address bytes but NACK for data bytes, ensuring no unintended modification. The WP pin has no effect on reads and is internally pulled low if left unconnected, defaulting to unprotected operation.

Can the 47L64T-I/MNY operate at 1 MHz I²C speed across its full temperature range?

Yes, the 47L64T-I/MNY supports 1 MHz I²C operation across its full industrial temperature range (−40°C to +85°C) and supply range (2.7V–3.6V), meeting AC timing specs including THIGH ≥ 400 ns, TLOW ≥ 600 ns, and TAA ≤ 550 ns. This is validated in the official DS20006168B datasheet under "AC CHARACTERISTICS" for Industrial grade.

What happens if power is restored during an AutoStore operation on the 47L64T-I/MNY?

If power is restored during an AutoStore operation on the 47L64T-I/MNY, the device completes the ongoing store sequence first, then initiates AutoRecall to reload the preserved data into SRAM. The total unavailability window equals TSTORE (≤10 ms) plus TRESTORE (≤550 µs), after which normal I²C communication resumes with the restored dataset intact.

Is the 47L64T-I/MNY pin-compatible with other Microchip EERAM devices like the 47L16 or 47L04?

No, the 47L64T-I/MNY is not pin-compatible with smaller-density Microchip EERAMs such as the 47L16 (16 Kbit) or 47L04 (4 Kbit). While all share the same 8-pin TDFN/SOIC footprint and pin functions (VCAP, A1, A2, VSS, SDA, SCL, WP, VCC), their internal memory maps and timing parameters differ - requiring separate validation for replacement. Always verify address space, AC timing, and VTRIP alignment before substitution.