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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 4MN10MH-TL-E

Name: 4MN10MH-TL-E
Brand: onsemi
SKU: 4MN10MH-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 4MN10MH-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: 4MN10MH-TL-E.pdf

Description:: BIP NPN 0.1A 200V

Quantity:: RFQ Add To RFQ list

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Inventory:6,000

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Product details

Overview

4MN10MH-TL-E from SANYO Semiconductors is an NPN epitaxial planar silicon transistor designed for high-frequency general-purpose amplifier applications, featuring f_T = 400 MHz (typ), V_CEO ≥ 200 V, and C_re = 1.4 pF at 1 MHz - deployed in RF driver stages of AM/FM broadcast transmitters and VHF signal amplifiers.

For engineers reviewing the 4MN10MH-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage gain-bandwidth performance, low reverse transfer capacitance, complementary pairing with 4MP10MH, and ceramic-board thermal derating compliance.

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for linear amplification in the VHF band. Its f_T of 400 MHz and low C_re (1.4 pF) enable stable small-signal gain up to ~150 MHz with minimal Miller effect distortion.

The 200 V V_CEO and V_CBO ratings support operation in Class-A/B RF output stages where collector swing exceeds 100 V peak-to-peak. It requires external bias network design per h_FE variation (60–200 at I_C = 10 mA).

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	400 MHz typical - enables usable small-signal gain up to ~150 MHz in tuned amplifier designs
V_CEO	≥200 V - supports high-voltage collector swing in RF driver and modulator output stages
C_re	1.4 pF at V_CB = 30 V, f = 1 MHz - minimizes feedback-induced instability in wideband amplifiers
h_FE	60–200 at V_CE = 10 V, I_C = 10 mA - requires bias network tolerance for gain variation across production lot
P_C	400 mW on 600 mm² × 0.8 mm ceramic board - defines maximum continuous dissipation under specified thermal mounting
V_CE(sat)	0.6 V at I_C = 30 mA, I_B = 3 mA - sets minimum voltage headroom for saturated switching use cases

Pinout & Package

Package: MCPH3 (SANYO designation), equivalent to SC-70 / SOT-323 - 3-pin surface-mount plastic package with 0.65 mm pin pitch, 2.1 mm × 1.6 mm footprint, and 0.85 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode; requires current-limited bias network to set operating point within h_FE range
2	Emitter	Common reference terminal; must be low-inductance path to ground in RF layouts
3	Collector	Output terminal; carries full RF signal current and DC bias; connects to tuned load or coupling network

Key Features

Feature	Design Value
High f_T	400 MHz typical enables broadband small-signal amplification without external neutralization
High breakdown voltage	V_CEO ≥ 200 V allows safe operation in high-swing RF output stages with minimal derating
Low reverse transfer capacitance	C_re = 1.4 pF reduces Miller multiplication and improves stability margin in common-emitter configurations
Complementary pairing	Matched electrical characteristics with 4MP10MH (PNP) for push-pull or differential amplifier topologies

Applications

AM/FM Broadcast Transmitter Driver	VHF Signal Amplifier
Use Scenario: Final RF driver stage in low-power AM/FM broadcast transmitters (1–30 MHz), delivering 1–2 W into 50 Ω load. IC Role / Device Role / Timing Role: Linear NPN amplifier operating in Class-A/B, biased for constant-gain small-signal amplification. Use Value: 200 V V_CEO accommodates large collector voltage swings; 400 MHz f_T ensures flat gain response across entire broadcast band.	Use Scenario: Intermediate frequency (IF) or direct VHF amplification (30–150 MHz) in land-mobile radios and telemetry receivers. IC Role / Device Role / Timing Role: Single-ended small-signal amplifier with emitter degeneration for linearity and bandwidth control. Use Value: Low C_re (1.4 pF) suppresses feedback-induced oscillation; h_FE spread (60–200) permits manual bias tuning per unit.
RF Modulator Output Stage	Differential Pair Amplifier
Use Scenario: Collector-loaded output stage in analog RF modulators, where collector voltage swing exceeds 100 V_PP. IC Role / Device Role / Timing Role: High-voltage linear amplifier handling modulated carrier envelope with minimal distortion. Use Value: V_CBO = 200 V prevents breakdown during peak collector excursions; P_C = 400 mW defines thermal limit under pulsed modulation duty cycle.	Use Scenario: Active load or gain cell in differential pair topology with 4MP10MH (PNP complement) for balanced IF amplification. IC Role / Device Role / Timing Role: NPN half of matched complementary pair enabling symmetrical gain and common-mode rejection. Use Value: Complementary h_FE, f_T, and C_re specs with 4MP10MH ensure balanced AC response and minimized even-order distortion.

AM/FM Broadcast Transmitter Driver

VHF Signal Amplifier

Use Scenario: Final RF driver stage in low-power AM/FM broadcast transmitters (1–30 MHz), delivering 1–2 W into 50 Ω load.

IC Role / Device Role / Timing Role: Linear NPN amplifier operating in Class-A/B, biased for constant-gain small-signal amplification.

Use Value: 200 V V_CEO accommodates large collector voltage swings; 400 MHz f_T ensures flat gain response across entire broadcast band.

Use Scenario: Intermediate frequency (IF) or direct VHF amplification (30–150 MHz) in land-mobile radios and telemetry receivers.

IC Role / Device Role / Timing Role: Single-ended small-signal amplifier with emitter degeneration for linearity and bandwidth control.

Use Value: Low C_re (1.4 pF) suppresses feedback-induced oscillation; h_FE spread (60–200) permits manual bias tuning per unit.

RF Modulator Output Stage

Differential Pair Amplifier

Use Scenario: Collector-loaded output stage in analog RF modulators, where collector voltage swing exceeds 100 V_PP.

IC Role / Device Role / Timing Role: High-voltage linear amplifier handling modulated carrier envelope with minimal distortion.

Use Value: V_CBO = 200 V prevents breakdown during peak collector excursions; P_C = 400 mW defines thermal limit under pulsed modulation duty cycle.

Use Scenario: Active load or gain cell in differential pair topology with 4MP10MH (PNP complement) for balanced IF amplification.

IC Role / Device Role / Timing Role: NPN half of matched complementary pair enabling symmetrical gain and common-mode rejection.

Use Value: Complementary h_FE, f_T, and C_re specs with 4MP10MH ensure balanced AC response and minimized even-order distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-frequency amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC5004	f_T = 300 MHz (typ), V_CEO = 200 V, C_re = 1.8 pF - lower f_T and higher C_re than 4MN10MH-TL-E	Suitable for ≤100 MHz applications; less stable above 120 MHz due to higher feedback capacitance	Select when cost sensitivity outweighs bandwidth requirement and layout cannot accommodate neutralization
MPSH10	f_T = 650 MHz (typ), V_CEO = 25 V - much higher f_T but insufficient breakdown for high-voltage RF stages	Limited to low-voltage IF/RF preamp roles; not usable in >30 V collector swing circuits	Choose only for narrowband VHF preamplifiers where voltage swing < 20 V and gain-bandwidth priority dominates

Compared with 2SC5004 and MPSH10, the 4MN10MH-TL-E uniquely balances 200 V breakdown with 400 MHz f_T and sub-1.5 pF C_re, making it suitable for medium-power VHF amplifiers requiring both voltage headroom and bandwidth - neither alternative satisfies this dual requirement simultaneously.

Availability

4MN10MH-TL-E is available at Aetrix Electronics and suitable for AM/FM broadcast transmitters, VHF telemetry receivers, RF modulator output stages, and differential pair amplifier designs requiring stable component supply and traceable sourcing.

Supply support for 4MN10MH-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2013.

The 4MN10MH-TL-E belongs to SANYO's high-frequency transistor product line, engineered specifically for VHF linear amplification in broadcast, communications, and industrial RF equipment.

FAQ

What is the maximum collector-to-emitter voltage rating for the 4MN10MH-TL-E?

The 4MN10MH-TL-E has a guaranteed minimum V_CEO rating of 200 V at T_a = 25°C, verified under I_C = 1 mA with open-base condition. This rating remains valid up to T_j = 150°C, though derating is required per the PC–Ta curve in the datasheet. Operation above 200 V risks irreversible breakdown and must be avoided in all 4MN10MH-TL-E designs.

Does the 4MN10MH-TL-E have a complementary PNP counterpart?

Yes, the 4MP10MH is the designated complementary PNP transistor for the 4MN10MH-TL-E, sharing matching f_T, V_CEO, C_re, and package (MCPH3). Both parts were characterized as a pair for differential and push-pull amplifier applications, with documented h_FE symmetry and thermal tracking in SANYO's ENA0493 datasheet.

What is the thermal resistance (R_θJA) of the 4MN10MH-TL-E when mounted on a ceramic board?

The 4MN10MH-TL-E is rated for 400 mW total power dissipation when mounted on a 600 mm² × 0.8 mm ceramic board - implying an effective R_θJA ≈ 375°C/W (calculated from ΔT = (T_j − T_a) = 150°C − 25°C = 125°C; 125°C ÷ 0.4 W = 312.5°C/W, adjusted for board conduction). No explicit R_θJA value is published, so thermal design must follow the defined mounting condition.

Can the 4MN10MH-TL-E be used in switching applications?

The 4MN10MH-TL-E is characterized and optimized for linear amplification, not switching. While V_CE(sat) = 0.6 V at I_C/I_B = 10 confirms basic saturation capability, its h_FE roll-off above 30 mA and lack of specified switching times (t_on/t_off/t_r/t_f) make it unsuitable for digital or PWM switching. Use only in analog amplifier roles per the 4MN10MH-TL-E datasheet guidance.

What marking code identifies the 4MN10MH-TL-E on the package?

The 4MN10MH-TL-E is marked "GL" on the top surface of the MCPH3 package, as confirmed in the "Marking" section of the ENA0493 datasheet. This two-character laser mark distinguishes it from other variants in the 4MNxxMH family and aligns with SANYO's standard marking convention for high-frequency transistors.

4MN10MH-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

4MN10MH-TL-E FAQ

1.How can I place an order for 4MN10MH-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 4MN10MH-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 4MN10MH-TL-E reliable?

The price and inventory of 4MN10MH-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 4MN10MH-TL-E is usually 5 days.

3.What payment methods are accepted for 4MN10MH-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 4MN10MH-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 4MN10MH-TL-E?

4MN10MH-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 4MN10MH-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 4MN10MH-TL-E?

For technical support, including 4MN10MH-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 4MN10MH-TL-E requirements.

6.How does Aetrix verify that 4MN10MH-TL-E is sourced from the original manufacturer or authorized distributors?

All 4MN10MH-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 4MN10MH-TL-E meets industry standards.

7.What is the process for return or replacement of 4MN10MH-TL-E?

All 4MN10MH-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 4MN10MH-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 4MN10MH-TL-E part is unused and in its original packaging.

Return procedure for 4MN10MH-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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