onsemi 50A02SS-TL-E
- Part No.:
- 50A02SS-TL-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-81
- Datasheet:
-
50A02SS-TL-E.pdf
- Description:
- TRANS PNP 50V 0.4A 3-SSFP
- Quantity:
- Payment:

- Shipping:

Inventory:15,652
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
50A02SS-TL-E from onsemi is a PNP bipolar junction transistor rated for –50 V VCEO, –400 mA continuous collector current, and featuring low VCE(sat) of –120 mV at IC = –100 mA / IB = –10 mA. It operates as a high-speed switching device in low-frequency amplifier and muting circuits, with fT = 690 MHz and RCE(sat) ≈ 210 mΩ.
For engineers reviewing the 50A02SS-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include its SC-81 (SSFP) ultrasmall package, verified –50 V breakdown ratings, confirmed hFE range of 200–500, and documented switching times (ton = 30 ns, tstg = 170 ns, tf = 30 ns).
Technical Context
This PNP BJT employs standard planar epitaxial construction optimized for low-saturation operation and fast switching. Its gain-bandwidth product of 690 MHz supports stable amplification up to mid-VHF frequencies under specified bias conditions (VCE = –10 V, IC = –50 mA), while the 210 mΩ typical RCE(sat) enables efficient current control in compact load-switching topologies.
The device is characterized across temperature (–25°C to +75°C) for hFE, VCE(sat), and VBE(sat), with guaranteed V(BR)CEO = –50 V and V(BR)CBO = –50 V at IC = –1 mA and –10 μA respectively. Its Cob = 3.8 pF at VCB = –10 V ensures minimal Miller effect in switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | –50 V - Maximum allowable collector-to-emitter voltage before breakdown; defines safe operating voltage headroom in PNP switch configurations. |
| IC (cont) | –400 mA - Continuous DC collector current rating; sets maximum steady-state load drive capability without derating. |
| VCE(sat) | –120 mV (max) at IC = –100 mA / IB = –10 mA - Low saturation voltage minimizes conduction loss and self-heating during ON-state operation. |
| hFE | 200–500 at VCE = –2 V, IC = –10 mA - DC current gain range determines required base drive for reliable saturation in switching designs. |
| fT | 690 MHz - Gain-bandwidth product confirms usable frequency response for small-signal amplification and fast edge control. |
| Cob | 3.8 pF at VCB = –10 V, f = 1 MHz - Output capacitance affects switching speed and gate-drive interaction in high-frequency switching. |
| ton/tf | 30 ns / 30 ns - Verified turn-on and fall times enable use in sub-30 MHz digital switching and pulse-width modulation circuits. |
Pinout & Package
50A02SS-TL-E is housed in an ultrasmall SSFP package (JEITA/ JEDEC SC-81), measuring 1.4 × 1.4 × 0.6 mm with 0.45 mm lead pitch. The package supports automated surface-mount assembly and thermal dissipation of 200 mW on a standard 20 × 30 × 1.6 mm glass epoxy board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased PNP operation; requires negative current relative to emitter to activate conduction. |
| 2 | Emitter | Current source terminal in PNP configuration; connected to higher potential rail in high-side switch layouts. |
| 3 | Collector | Current sink terminal; delivers load current to ground or lower-potential node when device is saturated. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | –120 mV max ensures <12 mW conduction loss at 100 mA, reducing thermal stress in space-constrained PCBs. |
| Ultrasmall SSFP package | 1.4 × 1.4 mm footprint enables placement in wearables, hearing aids, and other miniaturized consumer electronics. |
| High fT | 690 MHz allows stable small-signal amplification up to ~200 MHz with adequate gain margin in RF front-end stages. |
| Verified switching speed | 30 ns turn-on and fall times support PWM dimming, audio muting, and logic-level translation up to 10 MHz. |
| Robust breakdown ratings | –50 V VCEO/VCBO provides margin against transients in 24 V and 36 V industrial control rails. |
Applications
| Audio Muting Circuit | Low-Voltage Motor Driver Stage |
|---|---|
Use Scenario: Silent power-up/power-down sequencing in portable audio codecs and headphone amplifiers. IC Role / Device Role / Timing Role: PNP switch enabling/disabling signal path between DAC output and amplifier input. Use Value: Confirmed VCE(sat) ≤ –120 mV prevents audible pop/click by ensuring <100 µV residual offset during mute transitions. | Use Scenario: Directional control and enable/disable for brushed DC motors in battery-powered robotics. IC Role / Device Role / Timing Role: High-side PNP switch regulating motor supply rail connection to battery. Use Value: –400 mA IC rating and 210 mΩ RCE(sat) support 300 mA continuous motor current with <100 mW dissipation per device. |
| Low-Frequency Signal Amplifier | Power Rail Mux / OR-ing |
Use Scenario: Pre-amplification stage for sensor signals in medical thermometers and analog front-ends. IC Role / Device Role / Timing Role: Common-emitter amplifier biased at IC = –10 mA with hFE = 350 typical. Use Value: 690 MHz fT and 200–500 hFE ensure stable 10× voltage gain up to 100 kHz with <0.5% THD. | Use Scenario: Diode-OR replacement in dual-power-supply systems requiring zero-forward-drop rail selection. IC Role / Device Role / Timing Role: Active PNP switch implementing low-loss, controlled-turn-on power path selection. Use Value: –120 mV VCE(sat) yields <40% lower forward drop than Schottky diodes, improving efficiency in 3.3 V/5 V backup systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT5011LT1G | VCEO = –50 V, IC = –500 mA, VCE(sat) = –150 mV (max) at IC = –100 mA - higher current rating but higher saturation voltage. | Preferred where >400 mA peak load current is required; less optimal for ultra-low-loss muting due to +30 mV higher VCE(sat). | Select MMBT5011LT1G when higher IC margin is critical and slight increase in conduction loss is acceptable. |
| DXT5011ST116 | VCEO = –50 V, IC = –400 mA, VCE(sat) = –100 mV (typ) - tighter VCE(sat) spec but SC-74 package (larger than SSFP). | Better for designs needing lowest possible saturation voltage; unsuitable where 1.4 × 1.4 mm footprint is mandatory. | Choose DXT5011ST116 when minimizing VCE(sat) is prioritized over board area, and SC-74 layout compatibility exists. |
Compared with 50A02SS-TL-E, MMBT5011LT1G offers higher current headroom at the cost of increased conduction loss, while DXT5011ST116 delivers superior saturation performance in a larger package-making 50A02SS-TL-E the optimal balance of size, loss, and reliability for miniaturized PNP switching.
Availability
50A02SS-TL-E is available at Aetrix Electronics and suitable for audio muting circuits, low-voltage motor driver stages, and low-frequency amplifier designs requiring stable component supply and Pb-free compliance.
Supply support for 50A02SS-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 50A02SS-TL-E belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for space-constrained, low-loss switching and amplification in portable and battery-powered systems.
FAQ
What is the maximum continuous collector current rating for the 50A02SS-TL-E?
The 50A02SS-TL-E has a maximum continuous collector current (IC) rating of –400 mA at Ta = 25°C. This rating assumes operation within the recommended ambient temperature range and proper PCB thermal relief. Derating applies above 25°C per the PC–Ta curve in the datasheet, with full derating to zero at 150°C junction temperature.
Does the 50A02SS-TL-E support high-speed switching applications?
Yes, the 50A02SS-TL-E supports high-speed switching with verified ton = 30 ns, tstg = 170 ns, and tf = 30 ns under standard test conditions (VCC = –25 V, IC = –200 mA). These values make it suitable for PWM-based dimming, audio muting, and digital logic interface applications up to 10 MHz.
What package type does the 50A02SS-TL-E use, and what are its dimensions?
The 50A02SS-TL-E uses the SSFP package (JEDEC SC-81), measuring 1.4 mm × 1.4 mm × 0.6 mm with 0.45 mm lead pitch. Its embossed tape-and-reel packaging (TL) contains 8,000 units per reel and is RoHS-compliant and Pb-free, as indicated by the "-E" suffix.
How does the 50A02SS-TL-E compare to standard small-signal PNP transistors in terms of saturation voltage?
The 50A02SS-TL-E achieves a typical VCE(sat) of –60 mV and a maximum of –120 mV at IC = –100 mA / IB = –10 mA-significantly lower than many legacy PNP transistors (e.g., BC807 series: –300 mV max). This low saturation voltage directly reduces power loss and improves efficiency in high-duty-cycle switching applications.
Is the 50A02SS-TL-E suitable for automotive applications?
The 50A02SS-TL-E is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. It is designed for commercial and industrial applications including consumer electronics, portable devices, and industrial controls where ambient temperatures remain within –55°C to +150°C storage and ≤125°C operating limits.
50A02SS-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-81
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 400 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 120mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 10mA, 2V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 690MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-SSFP
50A02SS-TL-E FAQ
1.How can I place an order for 50A02SS-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 50A02SS-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 50A02SS-TL-E reliable?
The price and inventory of 50A02SS-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 50A02SS-TL-E is usually 5 days.
3.What payment methods are accepted for 50A02SS-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 50A02SS-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 50A02SS-TL-E?
50A02SS-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 50A02SS-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 50A02SS-TL-E?
For technical support, including 50A02SS-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 50A02SS-TL-E requirements.
6.How does Aetrix verify that 50A02SS-TL-E is sourced from the original manufacturer or authorized distributors?
All 50A02SS-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 50A02SS-TL-E meets industry standards.
7.What is the process for return or replacement of 50A02SS-TL-E?
All 50A02SS-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 50A02SS-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 50A02SS-TL-E part is unused and in its original packaging.
Return procedure for 50A02SS-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
50A02SS-TL-E Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

