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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 50C02MH-TL-E

Name: 50C02MH-TL-E
Brand: onsemi
SKU: 50C02MH-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 50C02MH-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: 3-SMD, Flat Leads

Datasheet:: 50C02MH-TL-E.pdf

Description:: TRANS NPN 50V 0.5A 3-MCPH

Quantity:: RFQ Add To RFQ list

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Inventory:6,968

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Product details

Overview

50C02MH-TL-E from onsemi is a low-V_CE(sat) NPN bipolar transistor in MCPH3 (SC-70/SOT-323) package, rated for 50 V V_CEO, 500 mA I_C, and 175 mΩ typical R_CE(sat) at I_C = 0.5 A / I_B = 50 mA. It serves as a high-speed switching element in small motor drives and muting circuits.

For engineers reviewing the 50C02MH-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include its ultrasmall footprint, low saturation resistance, 500 MHz f_T, fast switching (t_on = 30 ns), and guaranteed V_(BR)CEO = 50 V under standard test conditions.

Technical Context

This device implements a planar epitaxial NPN structure optimized for low-saturation operation and high-current gain linearity. Its h_FE range of 300–800 at V_CE = 2 V / I_C = 10 mA supports stable DC biasing in amplifier and switch configurations.

Designed for low-frequency amplification and pulsed switching up to 1 A peak (I_CP), it features Cob = 2.8 pF at V_CB = 10 V and t_f = 55 ns, enabling efficient transition control in compact load-switching topologies with minimal Miller effect.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition.
I_C	500 mA - Continuous collector current rating defining safe linear/switching operation limits.
R_CE(sat)	175 mΩ typ - Low ON-resistance enabling <100 mV V_CE(sat) at 100 mA, reducing conduction loss.
f_T	500 MHz - Gain-bandwidth product confirming suitability for RF-coupled switching and HF amplification.
Cob	2.8 pF - Output capacitance limiting high-frequency response and affecting switching speed in capacitive loads.
t_on/t_f	30 ns / 55 ns - Fast turn-on and fall times supporting >3 MHz switching in PWM-driven small motors.
P_C	600 mW - Power dissipation limit on ceramic substrate (600 mm² × 0.8 mm), defining thermal derating envelope.

Pinout & Package

MCPH3 package: ultrasmall surface-mount plastic case (2.1 × 1.6 × 0.85 mm), JEITA/JEDEC-compliant SC-70 (SOT-323), with gull-wing leads and Pb-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal accepting ~10–50 mA base drive to saturate transistor at target I_C.
2	Emitter	Current return path; tied to ground or low-side reference in common-emitter switching configurations.
3	Collector	High-side output node delivering up to 500 mA load current with minimal V_CE(sat) drop.

Key Features

Feature	Design Value
Low V_CE(sat)	100 mV max at I_C = 100 mA / I_B = 10 mA - reduces power loss and self-heating in battery-powered switches.
Ultrasmall footprint	MCPH3 (2.1 × 1.6 mm) - enables PCB space savings in wearables, hearing aids, and compact sensor modules.
High f_T	500 MHz - supports stable amplification up to VHF band and clean edge fidelity in digital signal routing.
Robust breakdown ratings	V_(BR)CBO = 60 V, V_(BR)CEO = 50 V - ensures margin against transients in 24 V industrial control interfaces.

Applications

Audio Muting Circuit	Small DC Motor Driver
Use Scenario: Signal path interruption during power-up/down or fault detection in portable audio codecs. IC Role / Device Role / Timing Role: NPN switch grounding amplifier output stage to prevent pop/click artifacts. Use Value: 30 ns t_on and 55 ns t_f ensure sub-100 ns mute/unmute transitions, eliminating audible artifacts.	Use Scenario: Pulse-width modulated drive for 3–12 V brushed micro-motors in medical pumps and precision actuators. IC Role / Device Role / Timing Role: Low-side switch controlling motor current with minimal conduction loss. Use Value: 175 mΩ R_CE(sat) limits I²R loss to <42 mW at 300 mA, reducing thermal stress on PCB.
Low-Frequency Amplifier	Load Switch for Sensor Biasing
Use Scenario: Pre-amplification of analog sensor outputs (e.g., thermistor, potentiometer) in industrial monitoring nodes. IC Role / Device Role / Timing Role: Common-emitter amplifier with h_FE = 300–800 providing stable DC gain at ≤100 kHz. Use Value: High h_FE minimizes required base drive current, easing design of ultra-low-power bias networks.	Use Scenario: Controlled enable/disable of analog front-end bias rails in multi-sensor IoT nodes. IC Role / Device Role / Timing Role: High-efficiency discrete load switch replacing integrated PMICs where cost and size are critical. Use Value: 600 mW P_C rating allows continuous 500 mA switching without heatsinking on standard FR4.

Audio Muting Circuit

Small DC Motor Driver

Use Scenario: Signal path interruption during power-up/down or fault detection in portable audio codecs.

IC Role / Device Role / Timing Role: NPN switch grounding amplifier output stage to prevent pop/click artifacts.

Use Value: 30 ns t_on and 55 ns t_f ensure sub-100 ns mute/unmute transitions, eliminating audible artifacts.

Use Scenario: Pulse-width modulated drive for 3–12 V brushed micro-motors in medical pumps and precision actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling motor current with minimal conduction loss.

Use Value: 175 mΩ R_CE(sat) limits I²R loss to <42 mW at 300 mA, reducing thermal stress on PCB.

Low-Frequency Amplifier

Load Switch for Sensor Biasing

Use Scenario: Pre-amplification of analog sensor outputs (e.g., thermistor, potentiometer) in industrial monitoring nodes.

IC Role / Device Role / Timing Role: Common-emitter amplifier with h_FE = 300–800 providing stable DC gain at ≤100 kHz.

Use Value: High h_FE minimizes required base drive current, easing design of ultra-low-power bias networks.

Use Scenario: Controlled enable/disable of analog front-end bias rails in multi-sensor IoT nodes.

IC Role / Device Role / Timing Role: High-efficiency discrete load switch replacing integrated PMICs where cost and size are critical.

Use Value: 600 mW P_C rating allows continuous 500 mA switching without heatsinking on standard FR4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	V_CEO = 40 V, R_CE(sat) = 300 mΩ typ at I_C = 10 mA - lower voltage rating and higher saturation resistance.	Less suitable for 24 V systems or high-current (>200 mA) loads due to reduced breakdown margin and higher loss.	Select when cost sensitivity outweighs V_CEO and R_CE(sat) requirements in ≤12 V consumer electronics.
DXTN0101000000000	V_CEO = 50 V, I_C = 600 mA, R_CE(sat) = 150 mΩ typ - slightly higher current rating and lower saturation resistance.	Offers improved thermal margin in sustained 500 mA operation but requires SOT-23-3 layout rework.	Prefer when upgrading thermal performance is prioritized and board redesign for SOT-23 is acceptable.

Compared with MMBT3904LT1G and DXTN0101000000000, the 50C02MH-TL-E delivers optimal balance of 50 V robustness, 175 mΩ R_CE(sat), and MCPH3 miniaturization-making it ideal for space-constrained 24 V industrial switches where both reliability and footprint matter.

Availability

50C02MH-TL-E is available at Aetrix Electronics and suitable for audio muting circuits, small DC motor drivers, low-frequency amplifiers, and sensor bias load switches requiring stable component supply and Pb-free compliance.

Supply support for 50C02MH-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation across automotive, industrial, cloud, and intelligent edge applications.

The 50C02MH-TL-E belongs to onsemi's general-purpose bipolar transistor family engineered for high-reliability, low-V_CE(sat) switching and amplification in miniaturized industrial and portable systems.

FAQ

What is the maximum continuous collector current rating for the 50C02MH-TL-E?

The 50C02MH-TL-E has a maximum continuous collector current (I_C) rating of 500 mA at T_a = 25°C when mounted on a ceramic substrate (600 mm² × 0.8 mm). Derating applies above 25°C ambient per the PC–Ta curve in the datasheet, with junction temperature limited to 150°C. This rating ensures reliable operation in sustained switching applications like motor control and load switching.

Does the 50C02MH-TL-E support high-speed switching applications?

Yes, the 50C02MH-TL-E supports high-speed switching with t_on = 30 ns, t_stg = 340 ns, and t_f = 55 ns under specified test conditions (V_CC = 25 V, I_C = 200 mA). Its 500 MHz f_T and low Cob (2.8 pF) further confirm suitability for PWM-driven loads up to several MHz, provided base drive strength and layout parasitics are controlled.

What is the package type and lead finish of the 50C02MH-TL-E?

The 50C02MH-TL-E uses the MCPH3 package - a JEITA/JEDEC-recognized SC-70 (SOT-323) variant measuring 2.1 × 1.6 × 0.85 mm. It features gull-wing leads with Pb-free (RoHS-compliant) finish and is supplied in embossed tape-and-reel format (TL) with 3,000 pcs./reel. The marking "50C02MH" appears on the top surface.

How does the 50C02MH-TL-E compare to standard SOT-23 NPN transistors in terms of saturation voltage?

The 50C02MH-TL-E achieves V_CE(sat) = 100 mV max at I_C = 100 mA / I_B = 10 mA and 175 mΩ typical R_CE(sat) at I_C = 0.5 A / I_B = 50 mA - significantly lower than typical SOT-23 devices like MMBT3904 (V_CE(sat) ≈ 300 mV). This enables lower conduction loss and cooler operation in high-duty-cycle switching.

Is the 50C02MH-TL-E suitable for use in automotive applications?

The 50C02MH-TL-E is not qualified to AEC-Q101 and is not recommended for automotive safety-critical systems. While its 50 V V_CEO, 150°C T_j, and Pb-free construction meet some environmental requirements, onsemi explicitly states that its products are not authorized for surgical implant, life-support, or automotive safety applications unless specifically qualified. Use in non-safety automotive subsystems requires full system-level validation.

50C02MH-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: 3-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 100mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 10mA, 2V

Power - Max:: 600 mW

Frequency - Transition:: 500MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-MCPH

50C02MH-TL-E FAQ

1.How can I place an order for 50C02MH-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 50C02MH-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 50C02MH-TL-E reliable?

The price and inventory of 50C02MH-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 50C02MH-TL-E is usually 5 days.

3.What payment methods are accepted for 50C02MH-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 50C02MH-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 50C02MH-TL-E?

50C02MH-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 50C02MH-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 50C02MH-TL-E?

For technical support, including 50C02MH-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 50C02MH-TL-E requirements.

6.How does Aetrix verify that 50C02MH-TL-E is sourced from the original manufacturer or authorized distributors?

All 50C02MH-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 50C02MH-TL-E meets industry standards.

7.What is the process for return or replacement of 50C02MH-TL-E?

All 50C02MH-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 50C02MH-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 50C02MH-TL-E part is unused and in its original packaging.

Return procedure for 50C02MH-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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