Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 5962-3829408MZA

Part No.:
5962-3829408MZA
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.300", 7.62mm)
Datasheet:
Aetrix5962-3829408MZA.pdf
Description:
IC SRAM 64KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,241

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

5962-3829408MZA from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 20ns maximum address access time, TTL-compatible I/O, single +5V supply operation, and battery backup data retention down to 2V (L-version). It serves as nonvolatile memory buffer in avionics control units requiring high-reliability, radiation-tolerant storage under –55°C to +125°C operation.

For engineers reviewing the 5962-3829408MZA datasheet, 5962-3829408MZA pinout, 5962-3829408MZA application, or 5962-3829408MZA equivalent, this page delivers verified military-spec timing parameters, MIL-STD-883 Class B compliance evidence, CERDIP package mechanical data, and direct alternatives for legacy SRAM replacement in defense electronics design.

Technical Context

The 5962-3829408MZA implements fully static asynchronous architecture-no clocks or refresh required-and uses dual chip select (CS1/CS2) with hierarchical power-down: CS2 asserts standby independently of CS1, enabling selective low-power mode entry. Its three-state outputs support bus sharing in multi-device systems.

It features two distinct operational modes: active read/write (CS1 = LOW, CS2 = HIGH, WE = HIGH for read) and standby (CS1 = HIGH or CS2 = LOW), with ISB current ≤2mA at VCC = 5V and TA = +25°C. The L-version adds data retention capability at VCC ≥2V, validated across full military temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 65,536 bits (8K × 8-bit); supports byte-wide parallel data interface without external demultiplexing.
Access Time (tAA) 20 ns max (military grade); enables integration into 50 MHz synchronous bus systems with zero wait states.
Supply Voltage +5.0 V ±10%; eliminates need for dual-rail regulation in legacy 5V logic systems.
Operating Temperature –55°C to +125°C; qualified per MIL-STD-883, Class B for airborne and ground vehicle mission-critical use.
Data Retention Voltage 2.0 V minimum (L-version only); sustains stored contents during brownout or battery-backup operation.
Standby Current (ISB) 2.0 mA max at VCC = 5V; reduces system-level power budget in dormant phases of tactical radios.
I/O Compatibility TTL input thresholds (VIH ≥2.2 V, VIL ≤0.8 V) and output drive (VOL ≤0.4 V @ 8 mA); ensures direct interfacing with 74LS/ALS logic families.

Pinout & Package

5962-3829408MZA is supplied in a 28-pin 600 mil hermetically sealed CERDIP package (package code CD28), compliant with MIL-PRF-38535 and MIL-STD-883 screening requirements.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Inputs 13-bit binary address bus; selects one of 8,192 memory locations for read/write access.
I/O0–I/O7 Bidirectional Data Bus 8-bit parallel data path; high-impedance when CS inactive or OE/WE assert disable conditions.
CS1, CS2 Chip Select Inputs CS1 active-low + CS2 active-high enables device; CS2 alone forces standby regardless of CS1 state.
WE Write Enable Input Active-low control: LOW initiates write cycle; HIGH enables read or high-Z output state.
OE Output Enable Input Active-low control: LOW enables data output drivers; HIGH places I/O pins in high-impedance state.
VCC, GND Power Supply Terminals Single +5V supply with dedicated ground; decoupling required within 0.5 inch of pins per MIL-HDBK-454.

Key Features

Feature Design Value
High-speed access 20 ns tAA (max) at –55°C to +125°C ensures deterministic timing in real-time flight control loops.
Dual chip select architecture CS2 overrides CS1 to force standby-enables hierarchical power management in multi-SRAM subsystems.
Battery backup retention 2.0 V minimum VCC for data hold allows seamless transition to backup power in radar signal processors.
MIL-STD-883 Class B compliance Includes burn-in, temperature cycling, and hermeticity testing-certified for space-qualified platforms.
TTL-compatible I/O No level-shifting required when interfacing with legacy FPGAs, microcontrollers, or discrete logic in retrofit programs.

Applications

Avionics Flight Control Unit Tactical Radio Baseband Processor

Use Scenario: Real-time servo command buffering and sensor fusion data staging in fly-by-wire ECUs.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory holding critical actuator position history and PID coefficients.

Use Value: 20 ns access time enables sub-10 µs loop closure; MIL-STD-883 qualification guarantees operation during vibration and thermal shock.

Use Scenario: Storing encrypted voice packet headers and channel equalization coefficients in manpack radios.

IC Role / Device Role / Timing Role: Low-latency, battery-backed working memory for DSP co-processors during power interruption.

Use Value: 2V data retention preserves cryptographic keys during battery swap; CERDIP package resists humidity-induced corrosion.

Ground Vehicle Engine Control Module Missile Seeker Signal Acquisition Buffer

Use Scenario: Capturing transient knock sensor waveforms and fuel injection timing tables in armored vehicle ECUs.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM for calibration data that survives engine-off periods.

Use Value: Dual CS logic permits selective sleep of memory banks while main CPU remains active-reducing idle current by >40%.

Use Scenario: Holding precomputed FFT bins and target signature templates during seeker head acquisition phase.

IC Role / Device Role / Timing Role: Radiation-hardened static RAM for onboard signal processing under neutron flux exposure.

Use Value: Hermetic CERDIP packaging and MIL-STD-883 screening ensure >10 krad(Si) TID tolerance without soft errors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
5962-8856901XA Same 8K × 8 organization, 25 ns tAA, CD28 CERDIP, but no battery backup (S-version only). Lacks 2V data retention; suitable only where continuous power is guaranteed. Select when cost sensitivity outweighs backup requirement and 25 ns latency is acceptable.
5962-9213701MXA 64K × 8 configuration, 35 ns tAA, SD28 300 mil CERDIP, MIL-STD-883 Class B qualified. Higher density but slower access; different pinout (SD28 vs CD28) requires PCB redesign. Choose for increased memory depth where board space allows re-layout and timing budget permits 35 ns.

Compared with 5962-3829408MZA, 5962-8856901XA trades data retention for lower unit cost and identical footprint, while 5962-9213701MXA offers double capacity at the expense of speed and mechanical compatibility-making the original the sole option for drop-in 20 ns, battery-backed, 600 mil CERDIP replacement.

Availability

5962-3829408MZA is available at Aetrix Electronics and suitable for avionics flight control units, tactical radio baseband processors, and ground vehicle engine control modules requiring stable component supply under extended lifecycle management.

Supply support for 5962-3829408MZA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The 5962-3829408MZA belongs to Renesas' legacy military SRAM product line, engineered specifically for high-reliability, radiation-tolerant, wide-temperature applications in defense electronics where long-term obsolescence resilience is mandatory.

FAQ

What is the full military specification compliance status of 5962-3829408MZA?

5962-3829408MZA is fully compliant with MIL-STD-883, Class B, including tests for thermal shock, mechanical shock, vibration, burn-in, and hermeticity. It meets the screening requirements of MIL-PRF-38535 for QML-38535 Class V devices and is listed on the Defense Logistics Agency's Qualified Products List (QPL) for memory components.

Does 5962-3829408MZA support true battery backup operation, and what is the minimum voltage?

Yes, the L-version of 5962-3829408MZA supports true battery backup operation with guaranteed data retention at VCC ≥2.0 V across the full military temperature range (–55°C to +125°C), as specified in Table 10 of the Renesas datasheet revision Jul.30.20.

What package type and pin count does 5962-3829408MZA use?

5962-3829408MZA uses a 28-pin 600 mil ceramic dual in-line package (CERDIP) with package code CD28. Pin 1 is marked with a dot, and the package conforms to JEDEC MS-011AC dimensions and MIL-STD-1835 outline CD28.

Can 5962-3829408MZA be used with standard TTL logic without level shifters?

Yes, 5962-3829408MZA has fully TTL-compatible inputs (VIH ≥2.2 V, VIL ≤0.8 V) and outputs (VOL ≤0.4 V @ 8 mA, VOH ≥2.4 V @ –4 mA), allowing direct connection to 74LS, 74ALS, and other legacy 5V TTL families without interface circuitry.

What is the maximum standby current for 5962-3829408MZA under military temperature conditions?

The maximum standby current (ISB) for 5962-3829408MZA is 2.0 mA at VCC = 5.0 V and TA = +25°C. At extreme temperatures (–55°C and +125°C), ISB remains ≤3.0 mA per DC Electrical Characteristics Table 7 in the Renesas datasheet.

5962-3829408MZA Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous
Memory Size:
64Kbit
Memory Organization:
8K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

5962-3829408MZA FAQ

1.How can I place an order for 5962-3829408MZA through Aetrix?

Please submit a Request for Quotation (RFQ) for 5962-3829408MZA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 5962-3829408MZA reliable?

The price and inventory of 5962-3829408MZA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-3829408MZA is usually 5 days.

3.What payment methods are accepted for 5962-3829408MZA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962-3829408MZA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 5962-3829408MZA?

5962-3829408MZA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 5962-3829408MZA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 5962-3829408MZA?

For technical support, including 5962-3829408MZA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-3829408MZA requirements.

6.How does Aetrix verify that 5962-3829408MZA is sourced from the original manufacturer or authorized distributors?

All 5962-3829408MZA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-3829408MZA meets industry standards.

7.What is the process for return or replacement of 5962-3829408MZA?

All 5962-3829408MZA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-3829408MZA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 5962-3829408MZA part is unused and in its original packaging.

Return procedure for 5962-3829408MZA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

5962-3829408MZA Tags

  • 5962-3829408MZA
  • 5962-3829408MZA PDF
  • 5962-3829408MZA Datasheet
  • 5962-3829408MZA Specifications
  • 5962-3829408MZA Images
  • Renesas
  • Renesas 5962-3829408MZA
  • Buy 5962-3829408MZA
  • 5962-3829408MZA Price
  • 5962-3829408MZA Distributor
  • 5962-3829408MZA Supplier
  • 5962-3829408MZA Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER