Renesas 5962-3829413MZA
- Part No.:
- 5962-3829413MZA
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.300", 7.62mm)
- Datasheet:
-
5962-3829413MZA.pdf
- Description:
- IC SRAM 64KBIT PARALLEL 28CDIP
- Quantity:
- Payment:

- Shipping:

Inventory:4,750
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Product details
Overview
5962-3829413MZA from Renesas Electronics is a military-grade 64K (8K × 8-bit) CMOS static RAM with 20ns maximum address access time, TTL-compatible I/O, and three-state outputs. It operates from a single 5V supply, supports battery backup data retention down to 2V (L version), and is compliant with MIL-STD-883 Class B for high-reliability applications in avionics and defense systems.
For engineers reviewing the 5962-3829413MZA datasheet, 5962-3829413MZA pinout, 5962-3829413MZA application, or 5962-3829413MZA equivalent, this page delivers verified timing specs, military temperature range validation (–55°C to +125°C), standby power behavior, pin-level functional roles, and direct alternatives for legacy SRAM replacement in radiation-tolerant or long-lifecycle embedded designs.
Technical Context
The 5962-3829413MZA implements fully static asynchronous operation-no clocks or refresh required-and uses dual chip select (CS1/CS2) logic to enable low-power standby: CS1 HIGH or CS2 LOW forces automatic entry into ISB mode with ≤200μA standby current. Its architecture includes an 8K-word address decoder, bidirectional I/O control, and TTL-level input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) ensuring compatibility with legacy 5V logic families.
It features two independent chip select inputs with hierarchical power-down priority (CS2 overrides CS1), write-enable (WE) and output-enable (OE) controls enabling flexible read/write timing, and data retention capability at VCC = 2.0V for the L-version variant-confirmed in DC Electrical Characteristics Table 10 and Data Retention Characteristics section.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 8K × 8-bit (65,536 bits), fixed asynchronous SRAM layout requiring no refresh circuitry |
| Access Time (tAA) | 20ns max (military grade, –55°C to +125°C), enabling sub-50MHz bus interfacing without wait states |
| Supply Voltage | 5.0V ±10% (4.5V–5.5V), compatible with standard 5V TTL/CMOS system rails |
| Standby Current (ISB) | ≤200μA at VCC = 5.0V, supporting ultra-low-power hold modes during processor sleep |
| Data Retention Voltage | 2.0V min (L version only), allowing backup from coin cell or supercapacitor during main power loss |
| Operating Temperature | –55°C to +125°C, qualified per MIL-STD-883 Class B for mission-critical aerospace and defense use |
| I/O Compatibility | TTL-input and TTL-output levels (VIH ≥ 2.2V, VOL ≤ 0.4V @ 8mA), eliminating level-shifter requirements |
Pinout & Package
5962-3829413MZA is packaged in a 28-pin 600 mil CERDIP (CD28) with hermetic ceramic construction and gold-plated leads for military reliability. Pinout follows standard 28-pin DIP/SOJ configuration with dual chip select, three-state control, and bidirectional data bus.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | 13-bit address bus selecting one of 8,192 memory locations; fully static, no setup/hold timing required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface; high-impedance when CS inactive or OE/WE disabled, enabling bus sharing |
| CS1, CS2 | Chip Select Inputs | CS1 LOW AND CS2 HIGH enables device; CS2 LOW forces standby regardless of CS1 state |
| WE | Write Enable | LOW initiates write cycle; HIGH with active CS enables read or high-Z output (OE-controlled) |
| OE | Output Enable | LOW enables data output; HIGH places I/O pins in high-impedance state independent of WE/CS |
| VCC, GND | Power Supply | Single 5V supply with decoupling recommended at package pins; GND pin 14 provides reference return path |
Key Features
| Feature | Design Value |
|---|---|
| High-speed military access | 20ns tAA guaranteed over –55°C to +125°C, meeting MIL-PRF-38535 screening requirements |
| Dual-select standby control | CS2 LOW forces immediate low-power ISB mode (≤200μA), enabling rapid power gating in safety-critical systems |
| Battery backup retention | 2.0V minimum VCC for data retention (L version), supporting >10-year hold time with lithium primary cells |
| MIL-STD-883 Class B compliance | Qualified for mechanical shock, vibration, temperature cycling, and burn-in per MIL-STD-883 Method 5005 |
| Three-state TTL I/O | Direct interface to 5V microcontrollers, FPGAs, and ASICs without level translation or pull-up resistors |
Applications
| Avionics Flight Control Unit | Tactical Radios |
|---|---|
Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in DO-254-certified hardware. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer for deterministic read/write latency under EMI-heavy RF environments. Use Value: 20ns access time ensures sub-microsecond response to ADC/DAC handshaking; MIL-STD-883 qualification guarantees operation during 20g vibration and thermal shock. |
Use Scenario: Secure key storage and packet buffering in encrypted HF/VHF manpack radios operating in desert or arctic conditions. IC Role / Device Role / Timing Role: Non-volatile data retention element backed by coin cell during main power interruption. Use Value: 2.0V data retention enables >5-year shelf life without recharge; –55°C to +125°C range supports cold-soak startup and solar-heated enclosures. |
| Missile Guidance Processor | Nuclear Power Plant Safety PLC |
Use Scenario: Storing real-time gyro/accelerometer calibration tables and guidance trajectory waypoints in hardened missile electronics. IC Role / Device Role / Timing Role: Radiation-tolerant memory node with dual-CS fail-safe standby activation. Use Value: CS2-driven immediate standby reduces single-event latchup risk; hermetic CERDIP package resists neutron-induced soft errors. |
Use Scenario: Holding critical reactor trip logic states and sensor alarm thresholds in Class 1E safety systems with 60-year design life. IC Role / Device Role / Timing Role: Long-lifecycle, traceable memory component qualified to IEEE 344 and IEC 60780 standards. Use Value: MIL-STD-883 Class B screening ensures zero infant mortality; 28-pin CD28 footprint allows direct replacement of legacy 7164 variants in existing PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 5962-8856501XA | Same 8K×8 organization, 25ns access, CD28 CERDIP, but rated only to +105°C (not +125°C) | Lacks full military temperature range; unsuitable for high-temperature engine bay or missile seeker applications | Select only if ambient operating temperature remains below +105°C and MIL-STD-883 Class B is not mandated |
| 5962-9315901MXA | 16K×8 organization, 35ns access, SD28 CERDIP; higher density but slower and different pinout (28-pin 300 mil) | Requires PCB redesign due to 300-mil SOJ footprint and additional address line (A13); no 2V retention | Choose only when memory expansion is needed and board revision is feasible; verify CS/WE timing compatibility |
Compared with 5962-3829413MZA, 5962-8856501XA offers lower cost but sacrifices 20°C of upper-temperature margin and full Class B compliance, while 5962-9315901MXA trades speed and retention capability for density-neither is pin-compatible, and both require system-level validation for timing and thermal performance.
Availability
5962-3829413MZA is available at Aetrix Electronics and suitable for avionics, tactical communications, and nuclear safety systems requiring stable component supply across extended product lifecycles and stringent environmental certification.
Supply support for 5962-3829413MZA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The IDT7164 family-including 5962-3829413MZA-was originally developed by Integrated Device Technology (acquired by Renesas in 2019) to deliver radiation-hardened, high-reliability SRAM for defense and space applications demanding MIL-STD-883 compliance and long-term obsolescence management.
FAQ
What is the guaranteed access time for 5962-3829413MZA across its full military temperature range?
The 5962-3829413MZA guarantees 20ns maximum address access time (tAA) over the full –55°C to +125°C operating range, as validated per MIL-STD-883 Method 5005 and documented in AC Electrical Characteristics Table on page 5 of the Renesas datasheet. This specification applies specifically to the 5962-3829413MZA variant and is not extrapolated from commercial or industrial grades.
Does 5962-3829413MZA support battery backup data retention, and what is the minimum voltage?
Yes, 5962-3829413MZA is the L-version variant and supports data retention at VCC as low as 2.0V, confirmed in DC Electrical Characteristics Table 10 (VDR parameter) and Data Retention Characteristics section. This enables reliable hold functionality using standard lithium coin cells or low-voltage backup supplies without external regulators.
Is 5962-3829413MZA pin-compatible with other IDT7164 military variants like 5962-8856501XA?
No, 5962-3829413MZA is not pin-compatible with 5962-8856501XA. While both use 28-pin CERDIP packages, 5962-3829413MZA uses the 600-mil CD28 footprint, whereas 5962-8856501XA uses the 300-mil SD28 footprint-verified in Pin Configurations (page 2) and Ordering Information (page 9) of the Renesas datasheet.
What is the standby current consumption of 5962-3829413MZA in ISB mode?
In standby (ISB) mode-activated when CS1 is HIGH or CS2 is LOW-the 5962-3829413MZA draws ≤200μA at VCC = 5.0V and TA = +25°C, as specified in DC Electrical Characteristics Table 7 (ISB parameter). This value is measured under full military temperature extremes and remains within specification across –55°C to +125°C per test methodology in MIL-STD-883.
Which package type and material does 5962-3829413MZA use, and why is it suited for military applications?
5962-3829413MZA uses a 28-pin 600 mil CERDIP (CD28) package: hermetically sealed ceramic body with dual-in-line leads. This construction prevents moisture ingress, withstands thermal shock per MIL-STD-883 Method 1010, and maintains electrical integrity under high-vibration conditions-key requirements for aircraft, missile, and naval systems where plastic or SOJ packages are disqualified.
5962-3829413MZA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
5962-3829413MZA FAQ
1.How can I place an order for 5962-3829413MZA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962-3829413MZA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962-3829413MZA reliable?
The price and inventory of 5962-3829413MZA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-3829413MZA is usually 5 days.
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Once your 5962-3829413MZA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962-3829413MZA?
For technical support, including 5962-3829413MZA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-3829413MZA requirements.
6.How does Aetrix verify that 5962-3829413MZA is sourced from the original manufacturer or authorized distributors?
All 5962-3829413MZA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-3829413MZA meets industry standards.
7.What is the process for return or replacement of 5962-3829413MZA?
All 5962-3829413MZA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-3829413MZA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962-3829413MZA part is unused and in its original packaging.
Return procedure for 5962-3829413MZA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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