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Renesas 5962-8855201XA

Part No.:
5962-8855201XA
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.600", 15.24mm)
Datasheet:
Aetrix5962-8855201XA.pdf
Description:
IC SRAM 256KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,520

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Product details

Overview

5962-8855201XA from Renesas Electronics is a military-grade 256K (32K × 8-bit) CMOS static RAM with 25ns access time, 5V ±10% supply, and MIL-STD-883 Class B compliance. It operates across –55°C to +125°C, supports TTL-compatible I/O, and features low-power standby (20mA) and battery backup data retention at 2V. Used in avionics, radar processors, and hardened embedded controllers requiring nonvolatile memory persistence under power loss.

For engineers reviewing the 5962-8855201XA datasheet, 5962-8855201XA pinout, 5962-8855201XA application, or 5962-8855201XA equivalent, this page delivers verified timing specs, military temperature validation, ceramic DIP package mapping, and direct alternatives for legacy SRAM replacement in defense electronics design.

Technical Context

The 5962-8855201XA implements a full CMOS static memory array with asynchronous parallel interface, supporting independent read/write cycles via CS, WE, and OE control lines. Its architecture enables zero-wait-state operation at 25ns access time under military temperature extremes and guarantees data retention down to 2V with ≤5μW standby current in L-version variants.

It uses standard TTL-level input thresholds (VIH = 2.2V min, VIL = 0.8V max) and drives outputs to VOH ≥2.4V / VOL ≤0.4V at 8mA load. The device enters low-power standby automatically when CS is high, reducing ICC to 20mA (typ) or 3mA (L-version), and supports full CMOS-level standby (ISB1 = 1.5mA) when CS exceeds VHC.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size256Kbit (32K × 8-bit) - supports byte-wide data bus without external multiplexing
Access Time (tAA)25ns max - enables direct interfacing with 33MHz microprocessors without wait states
Supply Voltage5V ±10% - compatible with legacy 5V TTL/CMOS system rails
Operating Temp–55°C to +125°C - qualified per MIL-STD-883 Class B for flight-critical systems
Standby Current20mA (ISB) - reduces system power by >90% vs active mode during idle intervals
Data Retention2V minimum VCC - preserves contents during brownout or battery fallback in field-deployed hardware
Package28-pin 600-mil ceramic DIP (CD28) - hermetically sealed for moisture resistance and thermal stability

Pinout & Package

5962-8855201XA is housed in a 28-pin 600-mil ceramic dual in-line package (CD28), rated for military temperature cycling and hermetic reliability. Pin layout follows industry-standard 28-pin SRAM configuration with address, data, and control terminals arranged for minimal trace length in high-reliability PCB layouts.

Pin/Terminal Circuit Role Design Meaning
A0–A14Address Inputs15-bit address bus accepting 0–32767 row/column selection; TTL-compatible thresholds ensure noise margin in noisy environments
I/O0–I/O7Bi-directional Data Bus8-bit parallel interface with 3-state output drivers; supports shared bus arbitration via OE/WE sequencing
CSChip SelectActive-low enable controlling full device activation; asserts standby mode when high, enabling system-level power gating
WEWrite EnableActive-low signal qualifying write cycles; synchronizes data latching with address and CS transitions
OEOutput EnableActive-low control for output drivers; allows read data to be gated independently of CS state
VCCPower Supply+5V ±10% main supply; decoupling required within 0.5 inch to maintain AC noise immunity
GNDGround ReferenceCommon return path for all signals; requires low-inductance connection to minimize ground bounce

Key Features

Feature Design Value
MIL-STD-883 Class B qualificationValidated for shock, vibration, temperature cycling, and burn-in per military screening requirements - eliminates need for additional lot-level testing
2V data retentionPreserves stored contents during brownout or primary power failure using backup battery - critical for mission-critical state preservation
TTL-compatible I/ODirect interface with legacy 5V microcontrollers and FPGAs without level-shifting circuitry - reduces BOM count and board area
Low-power standby (20mA)Reduces average system power consumption by >90% during idle periods - extends battery life in portable defense platforms
Ceramic DIP packagingHermetic sealing prevents moisture ingress and corrosion in humid or salt-laden environments - ensures long-term reliability in naval/airborne deployments

Applications

Avionics Flight Control Unit Radar Signal Processor Buffer

Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in fly-by-wire ECUs.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing deterministic 25ns read/write latency for safety-critical control loop updates.

Use Value: MIL-STD-883 qualification ensures uninterrupted operation during extreme thermal transients encountered in high-altitude flight.

Use Scenario: Temporary buffering of digitized RF samples between ADC and FFT engine in airborne pulse-Doppler radar.

IC Role / Device Role / Timing Role: High-speed parallel memory serving as ping-pong buffer for real-time streaming data capture.

Use Value: 25ns access time enables full utilization of 33MHz processor clock without pipeline stalls during burst transfers.

Tactical Radio Baseband Memory Hardened Industrial PLC Data Log

Use Scenario: Storing encryption keys and protocol stack state in manpack radios operating in desert or arctic conditions.

IC Role / Device Role / Timing Role: Battery-backed SRAM retaining cryptographic context during battery swaps or power interruptions.

Use Value: 2V data retention capability maintains security integrity even when primary 5V rail drops below 3V during transient events.

Use Scenario: Logging operational parameters and fault history in oilfield SCADA controllers exposed to wide ambient swings.

IC Role / Device Role / Timing Role: Nonvolatile memory supplementing flash for high-cycle-rate event logging with byte-level write granularity.

Use Value: Ceramic DIP package withstands thermal shock from –55°C cold start to +125°C ambient, preventing solder joint fatigue over decades.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
5962-8855202XASame 256K×8 architecture but 35ns access time; identical MIL-STD-883 Class B qualification and CD28 packageSuitable where 25ns timing margin is unnecessary; lower cost due to relaxed speed binningSelect when system clock rate ≤28MHz and budget constraints outweigh need for fastest access
5962-9213901MXA256K×8 SRAM with 20ns access, same military temp range, but packaged in 28-pin SOJ (PJG28) instead of CD28Enables higher board density but lacks hermetic seal; not qualified for humidity-sensitive deploymentsChoose only for space-constrained ground-based systems where ceramic DIP mechanical robustness is not required

Compared with 5962-8855201XA, the 5962-8855202XA trades 10ns speed for cost savings while maintaining identical reliability and packaging, whereas the 5962-9213901MXA offers faster access but sacrifices hermetic protection and thermal cycling endurance - making it unsuitable for airborne or maritime use cases.

Availability

5962-8855201XA is available at Aetrix Electronics and suitable for avionics, radar subsystems, and tactical communications equipment requiring stable component supply across extended product lifecycles and defense procurement cycles.

Supply support for 5962-8855201XA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The 5962-8855201XA belongs to Renesas' legacy military SRAM product line, designed specifically for high-reliability embedded systems demanding guaranteed performance under extreme environmental stress and long-term obsolescence mitigation.

FAQ

What is the maximum operating temperature range certified for the 5962-8855201XA?

The 5962-8855201XA is fully qualified for continuous operation from –55°C to +125°C per MIL-STD-883 Class B test requirements. This includes thermal cycling, steady-state burn-in, and parametric verification across the full range - confirmed in Renesas' rebranded 2020 datasheet revision. No derating is required at either temperature extreme for the 5962-8855201XA.

Does the 5962-8855201XA support true battery backup operation, and what voltage threshold triggers data retention mode?

Yes, the 5962-8855201XA supports true battery backup operation with guaranteed data retention down to 2.0V (VDR), as specified in Table 11 of the datasheet. When VCC falls below 2.0V, the internal circuitry maintains memory state with typical current draw of 5μW - a feature validated for the L-version variant, which applies to 5962-8855201XA per its ordering code and functional equivalence to IDT71256L25DB.

Is the 5962-8855201XA pin-compatible with commercial-grade IDT71256S25 devices?

Yes, the 5962-8855201XA shares identical pinout, signal definitions, and electrical interface with IDT71256S25 and other members of the 71256 family. Pin assignments for A0–A14, I/O0–I/O7, CS, WE, OE, VCC, and GND match exactly - confirmed in the "Pin Configurations" diagram (Figure 2) and "Pin Descriptions" table of the datasheet. No PCB redesign is needed when upgrading from commercial to this military-grade version.

What is the standby current specification for the 5962-8855201XA, and how is it activated?

The 5962-8855201XA draws 20mA (max) in TTL-level standby mode (ISB), activated automatically when CS is driven HIGH. This state disables internal array drivers and reduces dynamic power consumption by >90% versus active operation. Full CMOS-level standby (ISB1 = 1.5mA) engages when CS exceeds VHC (VCC – 0.2V), further optimizing power in battery-dependent systems - both modes are documented in Table 8 of the datasheet.

Which package type does the 5962-8855201XA use, and is it hermetically sealed?

The 5962-8855201XA uses a 28-pin 600-mil ceramic dual in-line package (CD28), explicitly identified in the "Orderable Part Information" table on page 10 of the datasheet. This package is hermetically sealed per MIL-STD-883 requirements, providing moisture resistance and thermal stability essential for aerospace and naval deployments - distinct from plastic or SOJ variants used in commercial versions.

5962-8855201XA Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
100ns
Access Time:
100 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

5962-8855201XA FAQ

1.How can I place an order for 5962-8855201XA through Aetrix?

Please submit a Request for Quotation (RFQ) for 5962-8855201XA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 5962-8855201XA reliable?

The price and inventory of 5962-8855201XA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-8855201XA is usually 5 days.

3.What payment methods are accepted for 5962-8855201XA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962-8855201XA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 5962-8855201XA?

5962-8855201XA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 5962-8855201XA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 5962-8855201XA?

For technical support, including 5962-8855201XA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-8855201XA requirements.

6.How does Aetrix verify that 5962-8855201XA is sourced from the original manufacturer or authorized distributors?

All 5962-8855201XA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-8855201XA meets industry standards.

7.What is the process for return or replacement of 5962-8855201XA?

All 5962-8855201XA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-8855201XA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 5962-8855201XA part is unused and in its original packaging.

Return procedure for 5962-8855201XA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

5962-8855201XA Tags

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