Renesas 5962-8855204XA

Overview

5962-8855204XA from Renesas Electronics is a military-grade 256K (32K × 8-bit) CMOS static RAM with 25ns access time, TTL-compatible I/O, and full MIL-STD-883 Class B compliance for operation from –55°C to +125°C. It features low-power standby (20mA), battery backup data retention at 2V (5μW typical), and is packaged in a 28-pin 600-mil ceramic DIP (CD28). It serves as main memory or buffer in avionics, radar processors, and hardened embedded controllers.

For engineers reviewing the 5962-8855204XA datasheet, 5962-8855204XA pinout, 5962-8855204XA application, or 5962-8855204XA equivalent, key selection criteria include military temperature qualification, 25ns read cycle timing, CS-controlled power-down behavior, and 2V data retention capability under battery backup.

Technical Context

The 5962-8855204XA implements a fully decoded 15-bit address space (A0–A14) driving a 262,144-bit memory array with eight bidirectional I/O lines (I/O0–I/O7). Its control architecture uses three independent active-low enables: Chip Select (CS), Write Enable (WE), and Output Enable (OE), supporting both WE-controlled and CS-controlled write cycles with defined tWP, tAW, and tDW timing constraints.

It operates exclusively at VCC = 5.0V ±10% and supports two distinct power states: dynamic operation (ICC = 135mA max) during active read/write, and TTL-level standby (ISB = 20mA max) or CMOS-level full standby (ISB1 = 20mA max) when CS is high - with L-version variants enabling sub-μW retention below 2V.

Key Specifications

Pinout & Package

5962-8855204XA is supplied in a hermetically sealed 28-pin 600-mil ceramic dual in-line package (CD28), rated for high-reliability military environments and offering superior thermal stability and moisture resistance versus plastic packages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with 5962-8959901XA and 5962-9213501MXA, the 5962-8855204XA delivers optimal trade-off of military temperature margin, 25ns performance, and 2V battery retention - making it preferred for non-radiation-hardened, power-constrained avionics and defense platforms requiring deterministic low-latency memory access.

Availability

5962-8855204XA is available at Aetrix Electronics and suitable for avionics flight control, radar signal processing, and hardened communications systems requiring stable component supply across extended military lifecycle commitments.

Supply support for 5962-8855204XA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 5962-8855204XA belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for defense and aerospace applications demanding MIL-STD-883 qualification, hermetic packaging, and guaranteed parametric performance across extreme temperature ranges.

FAQ

What is the full military temperature range supported by the 5962-8855204XA?

The 5962-8855204XA is fully qualified for operation from –55°C to +125°C per MIL-STD-883 Class B test requirements. This includes full electrical characterization across the entire range, not just screening. All AC and DC parameters - including tAA = 25ns max, ISB = 20mA max, and VIL/VOL - are guaranteed at both temperature extremes, making it suitable for missile guidance, satellite payload, and jet engine control applications.

Does the 5962-8855204XA support true battery backup operation?

Yes, the 5962-8855204XA supports true battery backup data retention down to 2.0V (VDR), consuming ≤500μA typical during retention mode. This capability is intrinsic to its L-version silicon design and is verified across the full military temperature range. When main VCC drops below 2V, the device automatically enters retention mode without external control signals - preserving all 32K × 8 bits indefinitely as long as VCC ≥ 2V.

Is the 5962-8855204XA pin-compatible with other IDT 71256 variants?

Yes, the 5962-8855204XA shares identical pinout and footprint with all 28-pin CD28-packaged 71256 family members, including commercial 71256S25DB and industrial 71256L25YGI8. Signal assignments (A0–A14, I/O0–I/O7, CS, WE, OE, VCC, GND) match exactly, and DC/AC timing parameters are aligned to the 25ns speed grade. No PCB redesign is needed when substituting within same package type.

What packaging and marking details define the 5962-8855204XA?

The 5962-8855204XA is supplied in a 28-pin 600-mil ceramic dual in-line package (CD28) with metal lid hermetic seal. Marking includes "5962-8855204XA", date code, and Renesas logo. Per MIL-STD-883, each unit undergoes visual inspection, seal verification, and internal visual examination. The "XA" suffix denotes Class B qualification and full compliance with Method 5004 (Steady-State Life Test) and Method 5005 (Burn-In).

How does the standby power management work on the 5962-8855204XA?

The 5962-8855204XA implements dual-mode standby: when CS rises above VIH (≥2.2V), it enters TTL-level standby drawing ISB ≤ 20mA; if CS rises above VHC (≥VCC − 0.2V), it enters deeper CMOS-level standby with identical ISB1 ≤ 20mA. Unlike many SRAMs, it does not reduce current further in CMOS mode - the distinction lies in noise immunity and transition threshold. Both modes disable outputs and halt internal array activity until CS returns low.