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Renesas 5962-8866201XA

Part No.:
5962-8866201XA
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.600", 15.24mm)
Datasheet:
Aetrix5962-8866201XA.pdf
Description:
IC SRAM 256KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,840

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Product details

Overview

5962-8866201XA from Renesas Electronics is a 256K (32K × 8-bit) high-speed CMOS static RAM with military-grade reliability, 45ns max access time, 5V ±10% supply, and –55°C to +125°C operation. It features TTL-compatible I/O, battery-backed data retention down to 2V, and dual standby modes for low-power system design in avionics and ruggedized computing.

For engineers reviewing the 5962-8866201XA datasheet, 5962-8866201XA pinout, 5962-8866201XA application, or 5962-8866201XA equivalent, key selection criteria include MIL-STD-883 Class B compliance, 45ns military-grade timing, ceramic DIP package compatibility, and verified data retention at 2V for backup power scenarios.

Technical Context

This SRAM implements a full CMOS architecture with address-decoded 262,144-bit memory array, direct TTL-level input/output buffers, and dual standby control: TTL-level CS > VIH triggers ISB mode (20mA), while CMOS-level CS > VHC enables ISB1 ultra-low-power mode (1.5mA). Write operations are controlled via independent WE and CS signals with overlapping timing windows.

It supports two distinct operational modes-standard read/write cycles with tRC = 45ns and tAA = 45ns, and battery-retention mode where VCC can drop to 2.0V while maintaining data integrity with ICCDR ≤ 800μA across all temperature grades. Pin-compatible variants exist across speed grades (25–100ns) and power types (S/L), but 5962-8866201XA specifically maps to the 45ns standard-power military variant in 600-mil ceramic DIP.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization32K × 8-bit (262,144 bits), enabling byte-wide data bus interfacing without external demultiplexing
Access Time (tAA)45ns max at –55°C to +125°C, defining minimum clock-to-data latency in synchronous systems
Supply Voltage5V ±10% (4.5–5.5V), compatible with legacy 5V TTL/CMOS logic families and power rails
Data Retention Voltage2.0V min, allowing operation from backup batteries or brown-out conditions without data loss
Standby Current (ISB1)1.5mA max at VCC = 5.5V, enabling ultra-low-power hold state during processor sleep or watchdog timeout
Operating Temperature–55°C to +125°C, qualified per MIL-STD-883 Class B for sustained deployment in jet engine bays or space-qualified payloads
Input/Output CompatibilityTTL-compatible inputs (VIH = 2.2V, VIL = 0.8V) and outputs (VOH ≥ 2.4V, VOL ≤ 0.4V @ 8mA), ensuring direct interface with 74LS/ALS logic

Pinout & Package

5962-8866201XA is supplied in a 28-pin 600-mil ceramic dual in-line package (CDIP, package code CD28), hermetically sealed for moisture resistance and thermal stability in harsh environments.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address Inputs15-bit address bus accepting 0–32767 row/column decode; no internal latching - requires stable address during CS low
I/O0–I/O7Bi-directional Data Bus8-bit TTL-compatible data path; high-impedance when CS or OE high, driven during read/write with 8mA sink/source capability
CSChip SelectActive-low enable; asserts memory array and I/O drivers when low; high → enters ISB or ISB1 standby depending on voltage threshold
WEWrite EnableActive-low write control; low + CS low initiates write cycle; high during CS low enables read mode
OEOutput EnableActive-low output gate; controls data bus drive only - does not affect internal memory state or power mode
VCCPower Supply+5V ±10% primary supply; powers core logic, I/O buffers, and retention circuitry
GNDGround ReferenceSignal and power return plane; decoupling capacitor placement critical for noise immunity in high-speed read/write transitions

Key Features

FeatureDesign Value
MIL-STD-883 Class B qualificationFully tested per Method 5005 (steady-state life), 5007 (thermal cycling), and 5012 (hermeticity), ensuring field reliability in defense platforms
Dual standby power modesISB (20mA) triggered by TTL-level CS high; ISB1 (1.5mA) activated by CMOS-level CS high - selectable via system-level voltage rail design
Battery-backed data retentionGuaranteed 2V operation with ≤800μA retention current across full military temperature range, eliminating need for external backup controllers
Direct TTL interfaceNo level-shifting required: VIH/VIL thresholds and VOH/VOL drive strength match 74LS family, simplifying integration into legacy 5V backplanes
Hermetic ceramic DIP packagingCD28 600-mil package provides zero moisture ingress, CTE matching to PCB substrates, and radiation tolerance for aerospace use

Applications

Avionics Flight Control UnitTactical Radios

Use Scenario: Real-time storage of sensor fusion coefficients and flight envelope limits in fly-by-wire computers operating under vibration and thermal stress.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory holding mission-critical lookup tables with sub-50ns read latency to meet DO-254 timing closure.

Use Value: MIL-STD-883 qualification ensures no latent failures during 10,000+ hour service life; 45ns tAA guarantees deterministic response within 20MHz CPU bus cycles.

Use Scenario: Secure waveform buffering in handheld SDR radios deployed in desert or arctic environments with wide ambient temperature swings.

IC Role / Device Role / Timing Role: Nonvolatile buffer storing encrypted voice packets during RF transmit/receive handshaking with precise timing alignment.

Use Value: –55°C to +125°C operation eliminates heater/cooler subsystems; 2V data retention preserves keys during battery swap without volatile RAM refresh.

Missile Guidance ProcessorSpacecraft Onboard Computer

Use Scenario: Storing real-time inertial measurement unit (IMU) calibration offsets and navigation state vectors in guided munitions subject to high-G launch shock.

IC Role / Device Role / Timing Role: Radiation-tolerant, shock-resistant memory providing deterministic 45ns access for Kalman filter updates synchronized to IMU sampling clocks.

Use Value: Ceramic DIP package withstands 20,000g mechanical shock; ISB1 mode reduces thermal load in sealed guidance section during coast phase.

Use Scenario: Bootloader and telemetry buffer in satellite OBCs requiring unattended operation over 15-year orbital lifetime with periodic solar array shadowing.

IC Role / Device Role / Timing Role: Radiation-hardened SRAM holding boot firmware checksums and housekeeping telemetry with guaranteed data integrity during power brownouts.

Use Value: 2V retention voltage matches spacecraft battery bus droop profiles; MIL-STD-883 screening validates performance after 100krad(Si) TID exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
5962-8866101XA35ns max access time, same 32K×8 organization and CD28 package, identical MIL-STD-883 Class B screeningSuitable for systems requiring tighter timing margins (e.g., 28MHz bus clocks) but less tolerant of voltage droop below 4.5VSelect when system timing budget allows <35ns latency and power supply regulation is tighter than ±10%
5962-9211901MXA128K×8 organization (1Mbit), 55ns access, same military temp range and CDIP package, but higher ICC active current (150mA vs. 135mA)Applicable where larger memory footprint is needed per chip, such as radar pulse compression buffers or image preprocessing pipelinesChoose when memory density >256K is required and 55ns latency is acceptable in the signal chain

Compared with 5962-8866101XA, 5962-8866201XA trades 10ns slower access for broader voltage margin and lower standby power; versus 5962-9211901MXA, it delivers higher density efficiency (256K in same footprint) and lower dynamic power for compact, thermally constrained modules.

Availability

5962-8866201XA is available at Aetrix Electronics and suitable for avionics flight control units, tactical radios, and missile guidance processors requiring stable component supply across extended production lifecycles and extreme environmental certification.

Supply support for 5962-8866201XA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The 5962-8866201XA belongs to Renesas' legacy military-grade SRAM product line, engineered specifically for high-reliability embedded systems demanding MIL-STD-883 qualification, extended temperature operation, and hermetic packaging.

FAQ

What is the maximum operating temperature range certified for 5962-8866201XA?

5962-8866201XA is fully qualified for continuous operation from –55°C to +125°C per MIL-STD-883 Class B testing. This includes thermal cycling, steady-state life, and hermeticity validation - making it suitable for jet engine-mounted electronics, missile seekers, and space-qualified payloads where ambient extremes exceed commercial or industrial grade limits.

Does 5962-8866201XA support true battery backup operation below 5V?

Yes, 5962-8866201XA supports guaranteed data retention at VCC = 2.0V across its full military temperature range, with ICCDR ≤ 800μA. This enables direct connection to lithium thionyl chloride or nickel-metal hydride backup cells without external regulators or supervisors - a key differentiator from commercial SRAMs that lose data below 4.5V.

Is 5962-8866201XA pin-compatible with other IDT 71256 variants?

Yes, 5962-8866201XA shares identical 28-pin CD28 pinout with all IDT 71256S/L military variants (e.g., 5962-8866101XA, 5962-8866301XA). Address, data, control, and power pins map one-to-one - enabling drop-in replacement across speed grades (25–100ns) and power types (S/L) without PCB redesign.

What is the difference between ISB and ISB1 standby modes in 5962-8866201XA?

5962-8866201XA offers two standby modes: ISB activates when CS rises above VIH (2.2V), drawing ≤20mA; ISB1 engages when CS exceeds VHC (VCC – 0.2V ≈ 4.8V), reducing current to ≤1.5mA. ISB1 requires tighter CS voltage control but delivers 13× lower power - ideal for battery-limited hold states in portable defense systems.

Can 5962-8866201XA be used in new designs despite its legacy status?

Yes, 5962-8866201XA remains actively supported by Renesas with documented availability, obsolescence monitoring, and full MIL-STD-883 requalification history. Its continued production and traceable sourcing through Aetrix Electronics make it viable for long-lifecycle defense, aerospace, and nuclear instrumentation programs where qualification pedigree outweighs process node advancement.

5962-8866201XA Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
100ns
Access Time:
100 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

5962-8866201XA FAQ

1.How can I place an order for 5962-8866201XA through Aetrix?

Please submit a Request for Quotation (RFQ) for 5962-8866201XA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 5962-8866201XA reliable?

The price and inventory of 5962-8866201XA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-8866201XA is usually 5 days.

3.What payment methods are accepted for 5962-8866201XA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962-8866201XA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 5962-8866201XA?

5962-8866201XA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 5962-8866201XA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 5962-8866201XA?

For technical support, including 5962-8866201XA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-8866201XA requirements.

6.How does Aetrix verify that 5962-8866201XA is sourced from the original manufacturer or authorized distributors?

All 5962-8866201XA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-8866201XA meets industry standards.

7.What is the process for return or replacement of 5962-8866201XA?

All 5962-8866201XA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-8866201XA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 5962-8866201XA part is unused and in its original packaging.

Return procedure for 5962-8866201XA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

5962-8866201XA Tags

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