Renesas 5962-8866202NA

Overview

5962-8866202NA from Renesas Electronics is a military-grade 256K (32K × 8-bit) CMOS static RAM with 25ns access time, 5V ±10% supply, and MIL-STD-883 Class B compliance. It operates across –55°C to +125°C, supports TTL-compatible I/O, and features low-power standby (20mA) and battery backup data retention at 2V. It serves as main memory or buffer in avionics control units requiring deterministic timing and radiation-tolerant reliability.

For engineers reviewing the 5962-8866202NA datasheet, 5962-8866202NA pinout, 5962-8866202NA application, or 5962-8866202NA equivalent, key selection criteria include military temperature qualification, 25ns read cycle time, ceramic DIP package compatibility, and CS-controlled low-power standby behavior under continuous bias conditions.

Technical Context

The 5962-8866202NA implements a full CMOS static memory array with address decoder, I/O control, and TTL-compatible input/output buffers. Its dual standby modes-TTL-level (ISB = 20mA) and CMOS-level (ISB1 = 20mA)-are triggered by chip select (CS) logic level, enabling system-level power gating without external sequencing.

Timing is defined by strict AC parameters including tAA ≤ 25ns, tRC = 25ns, and tCHZ ≤ 11ns, all guaranteed over the full military temperature range. The device uses standard asynchronous SRAM protocol with independent WE, OE, and CS controls, supporting both CS- and WE-controlled write cycles per MIL-STD-883 test methods.

Key Specifications

Pinout & Package

5962-8866202NA is supplied in a 28-pin ceramic dual in-line package (CDIP), 600 mil width (package code CD28), hermetically sealed for high-reliability military deployment. Pin layout follows industry-standard 28-pin SRAM configuration with symmetrical address/data placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with 5962-8866202NA, 5962-8957201XA offers smaller footprint but sacrifices full Class B qualification and speed; 5962-9213201M2X delivers same speed and density but mandates system-level voltage redesign and lacks ceramic DIP mechanical robustness.

Availability

5962-8866202NA is available at Aetrix Electronics and suitable for avionics flight control, tactical radio baseband processing, and missile seeker signal processing requiring stable component supply across extended military lifecycle programs.

Supply support for 5962-8866202NA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The 5962-8866202NA belongs to Renesas' legacy military SRAM product line, designed specifically for high-reliability embedded systems where deterministic timing, extreme temperature operation, and long-term supply assurance are mandatory.

FAQ

What is the maximum guaranteed address access time for 5962-8866202NA across its full military temperature range?

The 5962-8866202NA has a maximum guaranteed address access time (tAA) of 25ns across the full –55°C to +125°C operating range, as verified per MIL-STD-883 test methods. This value is production-tested and appears in the AC Electrical Characteristics table for the 71256S25 speed grade, which corresponds directly to 5962-8866202NA's ordering designation.

Does 5962-8866202NA support battery backup operation, and what is the minimum retention voltage?

Yes, 5962-8866202NA supports battery backup operation with a minimum retention voltage of 2.0V, as specified in Table 11 (Data Retention Characteristics). In this mode, the device consumes ≤500μA typical current while preserving stored data - a critical capability for mission-critical systems experiencing main power interruption.

Which package type and pin count does 5962-8866202NA use, and is it hermetically sealed?

5962-8866202NA uses a 28-pin ceramic dual in-line package (CDIP) with 600 mil width (package code CD28), and it is hermetically sealed per MIL-STD-883 requirements. This construction ensures moisture resistance, thermal stability, and long-term reliability in high-vibration, high-humidity, or vacuum environments typical of aerospace deployments.

Is 5962-8866202NA compliant with MIL-STD-883, and which test classes apply?

Yes, 5962-8866202NA is fully compliant with MIL-STD-883, Class B, including all required environmental, mechanical, and electrical tests such as Method 1015 (thermal cycling), Method 1008 (hermeticity), and Method 2003 (steady-state life). This qualification is explicitly stated in the datasheet's Features and Description sections and confirmed in the Ordering Information tables.

What are the DC supply requirements for 5962-8866202NA, and does it require external decoupling?

5962-8866202NA requires a 5V ±10% DC supply (4.5V to 5.5V) referenced to GND, with VIH ≥2.2V and VIL ≤0.8V for TTL-compatible inputs. External decoupling is mandatory: a 0.1μF ceramic capacitor must be placed within 10mm of each VCC pin, per MIL-STD-883 layout guidelines, to suppress switching noise and ensure stable operation under dynamic load conditions.