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Renesas 5962-8866204NA
- Part No.:
- 5962-8866204NA
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.300", 7.62mm)
- Datasheet:
-
5962-8866204NA.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,760
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Product details
Overview
5962-8866204NA from Renesas Electronics is a military-grade 256K (32K × 8-bit) CMOS static RAM with 25ns access time, TTL-compatible I/O, and full MIL-STD-883 Class B compliance for operation from –55°C to +125°C. It features low-power standby (20mA), battery backup data retention at 2V (5μW typical), and is packaged in a 28-pin 600-mil ceramic DIP (CD28). It serves as main memory or buffer in avionics, radar processors, and hardened embedded controllers.
For engineers reviewing the 5962-8866204NA datasheet, 5962-8866204NA pinout, 5962-8866204NA application, or 5962-8866204NA equivalent, key selection criteria include military temperature qualification, 25ns read/write timing, 2V data retention capability, TTL-level interface compatibility, and ceramic DIP packaging for high-reliability board mounting.
Technical Context
The 5962-8866204NA implements a fully decoded 15-bit address space (A0–A14) driving a 32K × 8-bit memory array with asynchronous SRAM architecture. Its control logic supports three independent enable paths: chip select (CS), output enable (OE), and write enable (WE), enabling flexible bus interfacing in systems with multiplexed or shared data buses.
It operates exclusively at VCC = 5.0V ±10% and supports two power states: active mode (ICC = 135mA max) and TTL-level standby (ISB = 20mA max) triggered by CS HIGH. The L-version variant (e.g., 71256L25DB) enables 2V battery retention, but 5962-8866204NA is the S-version - standard power, no battery retention - per ordering code "S25DB" and MIL-STD-883 Class B test documentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256K-bit (32K × 8-bit) - provides byte-wide data path compatible with 8-bit microcontrollers and legacy bus architectures. |
| Access Time (tAA) | 25ns max - ensures compatibility with 20MHz–25MHz system clocks in real-time military processing subsystems. |
| Supply Voltage | 5.0V ±10% - matches standard TTL/CMOS logic rails and eliminates need for dedicated voltage regulation in ruggedized designs. |
| Operating Temp | –55°C to +125°C - qualified per MIL-STD-883 Class B for deployment in jet engine bays, missile guidance units, and satellite payload electronics. |
| Power (Active) | 135mA max ICC - enables predictable thermal budgeting in conduction-cooled chassis without forced-air cooling. |
| Standby Current | 20mA max ISB - reduces quiescent power during idle cycles in intermittently active mission-critical subsystems. |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) and output drive (VOH ≥ 2.4V @ –4mA, VOL ≤ 0.4V @ 8mA) - allows direct connection to legacy 5V logic families without level-shifting. |
Pinout & Package
5962-8866204NA is supplied in a 28-pin 600-mil ceramic dual in-line package (CD28), offering hermetic sealing and thermal stability for extended life under thermal cycling and vibration stress.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit parallel address bus accepting full 32K address space; no internal address latching required. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path supporting simultaneous read/write operations without external transceivers. |
| CS | Chip Select | Active-low enable controlling device activation; drives automatic transition to low-power standby when deasserted (HIGH). |
| WE | Write Enable | Active-low signal gating write cycles; used with CS to define write window timing per AC specs (tWP ≥ 20ns). |
| OE | Output Enable | Active-low control for output drivers; allows data bus sharing with other peripherals via three-state arbitration. |
| VCC | Power Supply | +5V supply pin; requires local 0.1μF ceramic decoupling adjacent to pin for noise immunity in EMI-prone environments. |
| GND | Ground Reference | Signal and power return; must be connected to low-impedance ground plane to maintain timing integrity and noise margin. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-STD-883 Class B Compliance | Fully tested to mechanical shock, vibration, temperature cycling, and burn-in requirements - certifies suitability for flight-critical hardware. |
| Asynchronous Operation | No clock required; all timing defined by CS/OE/WE edge relationships - simplifies integration into non-synchronous bus architectures like VME or custom backplanes. |
| TTL-Compatible Interface | Direct interconnection with 74LS/74ALS logic and microprocessors (e.g., 80C86, Z80) without level translators or bus buffers. |
| Low-Power Standby Mode | Reduces system power draw by >70% during inactive periods while preserving full memory contents - critical for battery-limited platforms. |
| Hermetic Ceramic DIP Packaging | CD28 package provides moisture resistance, thermal stability, and long-term reliability in high-humidity or vacuum environments. |
Applications
| Avionics Flight Control Unit Memory | Radar Signal Processing Buffer |
|---|---|
Use Scenario: Stores real-time sensor fusion coefficients and control law parameters in fly-by-wire flight computers operating in jet turbine environments. IC Role / Device Role / Timing Role: Primary working memory for deterministic execution of PID loops and failure detection algorithms with sub-50ns latency constraints. Use Value: 25ns access time and –55°C to +125°C operation ensure uninterrupted memory service during rapid thermal transients and G-force excursions. | Use Scenario: Buffers digitized IF samples between ADC and FFT engine in airborne pulse-Doppler radar front ends. IC Role / Device Role / Timing Role: High-speed circular buffer supporting burst-mode acquisition at 20+ MSPS with zero wait-state CPU access. Use Value: TTL-compatible I/O and 135mA active current allow direct connection to FPGA-based signal processors without additional interface logic. |
| Missile Guidance System Program Storage | Satellite Onboard Computer Cache |
Use Scenario: Holds mission-critical guidance software and trajectory tables in solid-fuel tactical missiles subject to extreme launch acceleration. IC Role / Device Role / Timing Role: Nonvolatile program memory replacement using battery-backed host controller - retains data during power interruption caused by staging events. Use Value: MIL-STD-883 Class B qualification guarantees functional integrity after 20,000g shock testing and 1000-hour high-temp bias life screening. | Use Scenario: Provides fast scratchpad memory for command execution and telemetry packet assembly in LEO satellite OBCs exposed to deep-space thermal vacuum. IC Role / Device Role / Timing Role: Low-power standby mode minimizes energy consumption during orbital eclipse periods while preserving volatile state. Use Value: Ceramic DIP package prevents moisture-induced parametric drift and maintains timing stability across –55°C to +125°C orbital thermal cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 5962-8957201XA | Same 32K × 8 organization, 25ns speed, but uses 28-pin SOJ (PJG28); lower profile, no hermetic seal. | Suitable for space-constrained PCBs where weight and height matter more than hermeticity; not rated for sustained humidity exposure. | Select when board-level conformal coating is applied and MIL-STD-883 Class B mechanical testing is waived. |
| 5962-9213501MXA | 32K × 8, 35ns access, 28-pin CDIP; higher temp range (–55°C to +125°C), same MIL-STD-883 Class B, but slower timing. | Acceptable where system clock is ≤20MHz and design margin allows relaxed timing; lower cost due to broader production volume. | Select when 35ns latency is acceptable and procurement cost or lead time outweighs marginal performance gain. |
Compared with 5962-8866204NA, 5962-8957201XA offers smaller footprint but reduced environmental robustness, while 5962-9213501MXA trades 10ns speed for broader availability and lower unit cost - both require layout revision and requalification for drop-in use.
Availability
5962-8866204NA is available at Aetrix Electronics and suitable for avionics, radar signal processing, and missile guidance systems requiring stable component supply across extended product lifecycles and defense procurement cycles.
Supply support for 5962-8866204NA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.
The 5962-8866204NA belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for military and space applications demanding guaranteed performance under extreme environmental stress and long-term obsolescence mitigation.
FAQ
What is the full military specification compliance status of the 5962-8866204NA?
The 5962-8866204NA is fully compliant with MIL-STD-883, Class B, including tests for mechanical shock, vibration, temperature cycling, and steady-state life. It is screened and qualified for use in military applications requiring operation from –55°C to +125°C, and its test report documentation is available upon request through Renesas' QML-certified distribution channel. This compliance applies specifically to the 5962-8866204NA part number, not generic variants.
Does the 5962-8866204NA support battery backup data retention?
No, the 5962-8866204NA is the standard-power (S) version and does not support battery backup data retention. Only the L-version parts (e.g., 71256L25DB) provide 2V data retention capability with typical 5μW standby current. The 5962-8866204NA draws 20mA in TTL-level standby mode and requires continuous 5V supply to retain data - this distinction is confirmed by its ordering code suffix "S25DB" and absence of VDR or ICCDR parameters in its characterization data.
What package type and pin count does the 5962-8866204NA use?
The 5962-8866204NA uses a 28-pin 600-mil ceramic dual in-line package (CD28), as specified in Renesas' ordering information and pin configuration diagrams. This hermetically sealed package differs from the 300-mil SOJ (PJG28) and 300-mil CERDIP (SD28) variants, and its physical dimensions and lead pitch are optimized for high-reliability through-hole mounting in vibration-prone military assemblies.
Can the 5962-8866204NA be operated at voltages other than 5V?
No, the 5962-8866204NA is specified only for VCC = 5.0V ±10% (4.5V to 5.5V) under all operating conditions. Its DC electrical characteristics - including VIH, VIL, VOH, and VOL - are guaranteed only within this range, and operation outside it may cause timing violations, data corruption, or accelerated wear. The device lacks multi-voltage support or wide-VCC tolerance; this limitation is explicitly stated in the Recommended DC Operating Conditions table.
How does the standby power mode function on the 5962-8866204NA?
The 5962-8866204NA enters low-power standby mode automatically when CS is driven HIGH, reducing ICC from 135mA (active) to 20mA (ISB). This mode preserves all memory contents and requires no additional control signals or sequencing. The device remains responsive to CS LOW transitions with full timing performance - tACS = 25ns max - making it ideal for burst-access architectures common in real-time military computing.
5962-8866204NA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
5962-8866204NA FAQ
1.How can I place an order for 5962-8866204NA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962-8866204NA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962-8866204NA reliable?
The price and inventory of 5962-8866204NA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-8866204NA is usually 5 days.
3.What payment methods are accepted for 5962-8866204NA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962-8866204NA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 5962-8866204NA?
5962-8866204NA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5962-8866204NA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962-8866204NA?
For technical support, including 5962-8866204NA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-8866204NA requirements.
6.How does Aetrix verify that 5962-8866204NA is sourced from the original manufacturer or authorized distributors?
All 5962-8866204NA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-8866204NA meets industry standards.
7.What is the process for return or replacement of 5962-8866204NA?
All 5962-8866204NA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-8866204NA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962-8866204NA part is unused and in its original packaging.
Return procedure for 5962-8866204NA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
5962-8866204NA Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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