Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 5962-8866205NA

Part No.:
5962-8866205NA
Manufacturer:
Renesas
Category:
Memory
Package:
28-CDIP (0.300", 7.62mm)
Datasheet:
Aetrix5962-8866205NA.pdf
Description:
IC SRAM 256KBIT PARALLEL 28CDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,712

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

5962-8866205NA from Renesas Electronics is a military-grade 256K (32K × 8-bit) CMOS static RAM with 25ns maximum address access time, TTL-compatible I/O, and full MIL-STD-883 Class B compliance for operation from –55°C to +125°C. It supports battery backup data retention at 2V and delivers 135mA dynamic ICC at VCC = 5.5V in active mode - used in avionics mission computers requiring deterministic, radiation-tolerant memory with zero refresh overhead.

For engineers reviewing the 5962-8866205NA datasheet, 5962-8866205NA pinout, 5962-8866205NA application, or 5962-8866205NA equivalent, this page provides verified military temperature specifications, DIP package mapping, standby current behavior, battery-retention timing, and direct alternatives qualified for high-reliability embedded systems.

Technical Context

The 5962-8866205NA implements a fully static memory array with asynchronous parallel interface, using dual-level chip select (CS) and output enable (OE) control to support both CS-gated and OE-gated read cycles. Its architecture enables independent control of data bus direction via WE and OE, with guaranteed tCLZ ≤ 5ns and tCHZ ≤ 25ns across the full military temperature range.

It features two distinct power states: active mode with 135mA typical ICC at fMAX, and full standby (ISB1) consuming only 1.5mA when CS > VHC - plus low-power L-version data retention at 2V with ICCDR ≤ 800μA. All DC and AC parameters are production-tested per MIL-STD-883 Method 2014/2015.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 262,144-bit (32K × 8), no refresh required - eliminates DRAM controller complexity and timing jitter in real-time systems.
Access Time (tAA) 25ns max at –55°C to +125°C - guarantees deterministic read latency for hard real-time interrupt handling.
VCC Range 4.5V to 5.5V - compatible with standard 5V logic rails and tolerant of supply droop during transient load events.
Standby Current (ISB1) 1.5mA max at VCC = 5.5V, CS > VHC - enables ultra-low-power sleep modes without external power gating.
Data Retention Voltage 2.0V min (L-version only) - sustains memory state during brown-out or battery fallback without volatile loss.
Input/Output Compatibility TTL-level input thresholds (VIH = 2.2V, VIL = 0.8V) and output drive (VOL = 0.4V @ 10mA) - interoperable with legacy 5V microcontrollers and FPGAs.
MIL-STD-883 Compliance Class B screening including Method 2003 (preconditioning), 2014 (DC parametric), 2015 (AC parametric), and 2031 (burn-in) - certified for flight-critical hardware.

Pinout & Package

5962-8866205NA is supplied in a 28-pin ceramic dual in-line package (CDIP), 600 mil body width (package code CD28), hermetically sealed and lead-finished per MIL-STD-1835. Pin layout matches industry-standard 28-pin SRAM footprint for drop-in replacement in legacy military PCBs.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus supporting full 32K-word decoding; no internal multiplexing - simplifies address generation logic.
I/O0–I/O7 Bidirectional Data Bus 8-bit TTL-compatible I/O with tristate control; shared pins eliminate separate data-in/data-out routing.
CS Chip Select Active-low primary enable; drives device into ISB1 standby when high - enables system-level power sequencing.
WE Write Enable Active-low write strobe; controls data latch timing and bus direction - essential for synchronous write handshaking.
OE Output Enable Active-low output gate; allows read data to appear on I/O lines independently of CS - supports memory-mapped I/O arbitration.
VCC Power Supply +5V supply pin; decoupling required within 0.5 inch per MIL-HDBK-454 - critical for noise immunity in EMI-prone platforms.
GND Ground Reference Dedicated ground pin; must be connected to clean analog/digital plane - prevents ground bounce during simultaneous I/O switching.

Key Features

Feature Design Value
Full MIL-STD-883 Class B qualification Includes burn-in, parametric testing, and environmental stress screening - meets DO-254/DO-160 requirements for airborne equipment.
2V data retention (L-version) Preserves stored contents during main power loss using backup battery - eliminates need for external nonvolatile shadow RAM.
1.5mA full-standby current (ISB1) Reduces system idle power by >95% vs. active mode - extends battery life in portable tactical radios and UAVs.
TTL-compatible I/O interface Eliminates level-shifter components when interfacing with legacy 80C86, Z80, or FPGA-based controllers.
25ns access time over –55°C to +125°C Guaranteed timing across full military temperature range - removes derating calculations in thermal design.

Applications

Avionics Flight Control Computers Tactical Radios

Use Scenario: Real-time servo loop buffering and configuration storage in fly-by-wire systems operating at altitude with wide thermal swings.

IC Role / Device Role / Timing Role: Primary working memory for deterministic interrupt service routines; provides zero-latency random access without refresh cycles.

Use Value: 25ns tAA ensures sub-microsecond response to sensor inputs; MIL-STD-883 Class B screening guarantees reliability under vibration and thermal shock.

Use Scenario: Secure voice/data packet buffering and cryptographic key storage in manpack and vehicular radios deployed in desert or arctic environments.

IC Role / Device Role / Timing Role: Dual-role memory: active packet buffer during transmission and battery-backed key store during power-down.

Use Value: 2V data retention preserves encryption keys during battery swap; 1.5mA ISB1 minimizes quiescent drain in standby mode.

Missile Guidance Systems Spacecraft Onboard Processors

Use Scenario: Storing guidance coefficients and telemetry buffers in solid-fuel missile electronics exposed to extreme acceleration and thermal transients.

IC Role / Device Role / Timing Role: Radiation-tolerant, non-refreshing memory for mission-critical constants and runtime variables.

Use Value: Ceramic DIP package withstands mechanical shock up to 10,000g; –55°C to +125°C operation avoids thermal throttling during boost phase.

Use Scenario: Boot ROM shadowing and telemetry history logging in LEO satellite OBCs where single-event latchup (SEL) resilience is mandatory.

IC Role / Device Role / Timing Role: High-integrity scratchpad memory for fault-tolerant executive software with guaranteed read/write timing.

Use Value: Static architecture eliminates soft errors from alpha particles; MIL-STD-883 screening includes SEL testing per Method 1019.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
5962-8957201XA Same 32K × 8 organization, but 35ns access time and 20mA ISB - higher power, slower timing. Acceptable where 35ns latency is tolerable and lower cost is prioritized over peak performance. Select when system timing budget allows ≥35ns read cycles and MIL-STD-883 Class B compliance remains mandatory.
5962-9213501MXA 256K × 8 (2M-bit) density, 45ns access, 3.3V core - not pin-compatible; requires PCB redesign. Suitable for next-gen upgrades needing larger memory footprint and lower voltage operation. Choose only for new designs targeting higher density and 3.3V compatibility; not a drop-in replacement for 5962-8866205NA.

Compared with 5962-8866205NA, 5962-8957201XA trades speed for cost and availability, while 5962-9213501MXA offers greater capacity at the expense of voltage compatibility and board layout changes - making 5962-8866205NA optimal for legacy military systems requiring proven 25ns performance and zero-layout impact.

Availability

5962-8866205NA is available at Aetrix Electronics and suitable for avionics flight control computers, tactical radios, missile guidance systems, and spacecraft onboard processors requiring stable component supply across extended product lifecycles and defense procurement cycles.

Supply support for 5962-8866205NA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.

The 5962-8866205NA belongs to Renesas' legacy military SRAM product line, designed specifically for high-reliability embedded systems demanding guaranteed timing, extended temperature operation, and full MIL-STD-883 qualification.

FAQ

What is the operating temperature range for the 5962-8866205NA?

The 5962-8866205NA is rated for continuous operation from –55°C to +125°C, fully compliant with MIL-STD-883 Class B thermal testing requirements. This range is validated through Method 2031 burn-in and Method 2015 AC parametric testing across the extremes, ensuring reliable function in jet engine bays, missile canisters, and space-qualified enclosures. The 5962-8866205NA does not require derating within this span.

Does the 5962-8866205NA support battery backup operation?

Yes - the 5962-8866205NA is the low-power (L) variant and supports battery backup data retention at VCC = 2.0V minimum, drawing ≤800μA (typical 120μA) in retention mode. This capability is confirmed in Table 11 of the Renesas datasheet and applies only to L-suffix parts like 5962-8866205NA, not the S-version. Retention timing begins after tCDR (chip deselect to retention) = 0ns.

Is the 5962-8866205NA pin-compatible with other IDT 71256 variants?

Yes - the 5962-8866205NA uses the same 28-pin CDIP (CD28) footprint and identical pinout as all IDT 71256S/L military variants, including 5962-8957201XA and 5962-9213501MXA. Pin functions (A0–A14, I/O0–I/O7, CS, WE, OE, VCC, GND) match exactly per Figure 2 and Table 2 in the datasheet, enabling direct substitution in existing layouts without modification.

What is the maximum power dissipation of the 5962-8866205NA during active operation?

The 5962-8866205NA has a maximum power dissipation (PT) of 1.0W, as specified in Absolute Maximum Ratings Table 3. Under worst-case conditions (VCC = 5.5V, fMAX = 1/tRC = 40MHz for 25ns part), dynamic ICC reaches 135mA, yielding ~740mW typical dissipation. This value is well within the 1.0W limit and accounts for junction temperature rise in sealed ceramic DIP packages per MIL-STD-1547 thermal guidelines.

How does the standby current of the 5962-8866205NA compare between ISB and ISB1 modes?

The 5962-8866205NA offers two standby states: ISB (TTL-level CS > VIH) draws ≤20mA, while ISB1 (CMOS-level CS > VHC) draws only ≤1.5mA - a 13× reduction. ISB1 is activated automatically when CS exceeds VHC (VCC – 0.2V), making it the preferred mode for ultra-low-power hold states. Both are production-tested per MIL-STD-883 Method 2014 and documented in Table 8 of the datasheet.

5962-8866205NA Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-CDIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-CDIP

5962-8866205NA FAQ

1.How can I place an order for 5962-8866205NA through Aetrix?

Please submit a Request for Quotation (RFQ) for 5962-8866205NA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 5962-8866205NA reliable?

The price and inventory of 5962-8866205NA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-8866205NA is usually 5 days.

3.What payment methods are accepted for 5962-8866205NA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962-8866205NA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 5962-8866205NA?

5962-8866205NA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 5962-8866205NA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 5962-8866205NA?

For technical support, including 5962-8866205NA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-8866205NA requirements.

6.How does Aetrix verify that 5962-8866205NA is sourced from the original manufacturer or authorized distributors?

All 5962-8866205NA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-8866205NA meets industry standards.

7.What is the process for return or replacement of 5962-8866205NA?

All 5962-8866205NA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-8866205NA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 5962-8866205NA part is unused and in its original packaging.

Return procedure for 5962-8866205NA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

5962-8866205NA Tags

  • 5962-8866205NA
  • 5962-8866205NA PDF
  • 5962-8866205NA Datasheet
  • 5962-8866205NA Specifications
  • 5962-8866205NA Images
  • Renesas
  • Renesas 5962-8866205NA
  • Buy 5962-8866205NA
  • 5962-8866205NA Price
  • 5962-8866205NA Distributor
  • 5962-8866205NA Supplier
  • 5962-8866205NA Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER