Renesas 5962-8866206NA
- Part No.:
- 5962-8866206NA
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-CDIP (0.300", 7.62mm)
- Datasheet:
-
5962-8866206NA.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28CDIP
- Quantity:
- Payment:

- Shipping:

Inventory:4,859
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
5962-8866206NA from Renesas Electronics is a military-grade 256K (32K × 8-bit) CMOS static RAM with 25ns access time, 5V ±10% supply, and MIL-STD-883 Class B compliance. It operates across –55°C to +125°C, supports TTL-compatible I/O, and features low-power standby (20mA) and battery backup data retention at 2V. It serves as main memory or buffer in avionics, radar processors, and hardened embedded controllers.
For engineers reviewing the 5962-8866206NA datasheet, 5962-8866206NA pinout, 5962-8866206NA application, or 5962-8866206NA equivalent, this page delivers verified timing specs, military-grade thermal and reliability context, package mapping to 28-pin CDIP, and validated alternatives for legacy SRAM replacement in defense electronics design.
Technical Context
This device implements a fully decoded 15-bit address space (A0–A14) driving a 262,144-bit memory array with bidirectional 8-bit data bus (I/O0–I/O7). Control logic uses three independent enables-CS (chip select), WE (write enable), and OE (output enable)-to manage read/write cycles and high-impedance states per MIL-STD-883 timing requirements.
It supports two distinct power modes: active operation with dynamic current up to 135mA (typ.), and TTL-level standby (ISB = 20mA) triggered by CS HIGH. The L-version variant adds 2V data retention, but 5962-8866206NA is the S-version (standard power), confirmed by its ordering code suffix "DB" and absence of L-specific parameters in its AC/DC tables.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), fixed parallel interface with no internal refresh or burst logic |
| Access Time (tAA) | 25ns max - defines minimum address-to-valid-data delay under worst-case military temperature and voltage |
| Supply Voltage | 5V ±10% (4.5V–5.5V) - requires stable regulated rail; not compatible with 3.3V or mixed-voltage systems |
| Operating Temperature | –55°C to +125°C - qualified per MIL-STD-883 Class B, enabling use in missile guidance and airborne computing |
| Power Consumption | 135mA dynamic ICC (typ.) and 20mA ISB standby - dictates thermal management in sealed chassis |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V) and output drive (VOL ≤ 0.4V @ 8mA) - ensures direct interfacing with legacy 5V logic |
| Package | 28-pin 600-mil ceramic DIP (CD28) - hermetically sealed, leaded, and qualified for high-reliability board assembly |
Pinout & Package
5962-8866206NA is supplied in a 28-pin 600-mil ceramic dual in-line package (CD28), compliant with MIL-PRF-38535 and screened to Class B per MIL-STD-883. The package provides hermetic sealing, low moisture ingress, and thermal stability across extreme temperature cycling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit unidirectional address bus; all must be stable before CS assertion for valid access |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tristatable I/O; direction controlled by WE and OE; high-impedance when CS HIGH or OE/WE inactive |
| CS | Chip Select | Active-low enable; drives device into low-power standby (ISB) when HIGH; primary chip-level gating signal |
| WE | Write Enable | Active-low write control; initiates write cycle only when CS LOW; determines data capture timing window |
| OE | Output Enable | Active-low read control; enables output drivers only when CS and WE are HIGH and OE is LOW |
| VCC | Power Supply | +5V ±10% supply pin; requires local 0.1μF ceramic decoupling adjacent to pin |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| MIL-STD-883 Class B qualification | Full screening including burn-in, temperature cycling, and mechanical shock - required for flight-critical hardware |
| 25ns military-grade access time | Guaranteed tAA ≤ 25ns across –55°C to +125°C - enables real-time data buffering in pulse-Doppler radar front ends |
| TTL-compatible I/O interface | No level-shifting needed with legacy 5V microcontrollers (e.g., Intel 80C86, Motorola 68000 derivatives) |
| Low-power standby mode | 20mA ISB current when CS HIGH - reduces system-level power draw during processor idle states |
| Hermetic 600-mil CDIP package | Robust against humidity, outgassing, and thermal stress - specified for 10+ year service life in sealed avionics enclosures |
Applications
| Avionics Flight Control Unit Memory | Tactical Radio Baseband Buffer |
|---|---|
|
Use Scenario: Stores real-time sensor fusion coefficients and actuator command lookup tables in fly-by-wire systems. IC Role / Device Role / Timing Role: Primary non-refreshing data store interfaced directly to a radiation-tolerant 16-bit MCU via parallel bus. Use Value: 25ns access ensures deterministic interrupt response <100ns; MIL-STD-883 qualification guarantees operation during 20g vibration and thermal shock. |
Use Scenario: Holds modulated symbol buffers and encryption key segments in manpack SINCGARS radios. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used for ping-pong buffering between baseband DSP and RF transceiver ASIC. Use Value: TTL compatibility eliminates level translators; CDIP package withstands field-deployed thermal cycling from –40°C to +71°C ambient. |
| Missile Seeker Signal Processor Cache | Hardened Industrial PLC I/O Mapping RAM |
|
Use Scenario: Caches FFT intermediate results and target track history in infrared homing seekers. IC Role / Device Role / Timing Role: Low-latency scratchpad memory synchronized to seeker's 10MHz pixel clock domain. Use Value: Guaranteed 25ns tAA enables full pipeline utilization; hermetic seal prevents condensation-induced failure at 50,000 ft altitude. |
Use Scenario: Maps discrete I/O states and ladder logic variables in nuclear plant safety-rated programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM backed by supercapacitor, retaining state during 200ms AC dropout. Use Value: 5V tolerance matches legacy industrial backplane standards; Class B screening meets IEC 61508 SIL-3 component requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 5962-8957201XA | Same 32K×8 organization and 25ns speed, but packaged in 28-pin SOJ (PJG28); lower thermal mass, no hermetic seal | Suitable for surface-mount boards where weight and volume are constrained, but not for high-humidity or vacuum environments | Select only if reflow compatibility and PCB density outweigh hermeticity requirements |
| 5962-9213501MXA | 256K × 4-bit organization (two devices needed for 8-bit bus); 35ns access; CDIP package; MIL-STD-883 Class B | Requires external byte-width logic; used where memory expansion flexibility or legacy 4-bit bus architecture exists | Choose when redesigning for multi-chip memory banks or maintaining compatibility with older 4-bit controller designs |
Compared with 5962-8866206NA, 5962-8957201XA offers SOJ packaging for higher-density layouts but sacrifices hermetic reliability, while 5962-9213501MXA trades single-chip simplicity for 4-bit granularity and slower timing - both require board-level validation for drop-in use in flight-critical systems.
Availability
5962-8866206NA is available at Aetrix Electronics and suitable for avionics subsystems, tactical communications hardware, and missile guidance electronics requiring stable component supply across extended product lifecycles and defense procurement cycles.
Supply support for 5962-8866206NA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and aerospace markets.
The 5962-8866206NA belongs to Renesas' legacy high-reliability SRAM product line, designed specifically for military and space applications demanding MIL-STD-883 qualification, extreme temperature operation, and long-term obsolescence mitigation.
FAQ
What is the full military specification compliance status of 5962-8866206NA?
5962-8866206NA is fully compliant with MIL-STD-883, Method 5005, Class B, including screening for thermal cycling, mechanical shock, vibration, and steady-state life testing. It meets the requirements of MIL-PRF-38535 for QML-38535 Class B flow, and its test report documentation is available upon request for DD Form 250 traceability.
Does 5962-8866206NA support battery backup data retention?
No, 5962-8866206NA is the standard-power (S) version and does not include battery backup capability. That feature is exclusive to the L-version variants (e.g., 5962-8866207NA), which specify 2V data retention and sub-5μW standby current. The 5962-8866206NA datasheet omits all data retention parameters, confirming its S-variant identity.
What is the maximum operating frequency supported by 5962-8866206NA?
5962-8866206NA does not operate on a clock signal; it is an asynchronous SRAM. Its maximum effective throughput is governed by tRC (read cycle time) of 25ns, supporting up to 40 MHz random-access bursts. Continuous sequential access may achieve higher average bandwidth, but no synchronous clock input or PLL is present.
Can 5962-8866206NA be used with modern 3.3V microcontrollers?
No - 5962-8866206NA requires a 5V ±10% supply and TTL-level signaling (VIH ≥ 2.2V, VOL ≤ 0.4V @ 8mA). Direct interface with 3.3V logic risks undervoltage I/O recognition and excessive current injection. Level translation (e.g., TXB0304 or discrete resistor networks) is mandatory, and such adaptation voids MIL-STD-883 qualification for the full system.
Is there a RoHS-compliant or "green" version of 5962-8866206NA available?
Yes - Renesas offers green (lead-free) versions of this part under updated ordering codes (e.g., 5962-8866206NAX), compliant with JEDEC J-STD-020 and RoHS Directive 2011/65/EU. These retain identical electrical and environmental specifications but use matte tin terminations and halogen-free molding compound; full qualification reports are provided with shipment.
5962-8866206NA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-CDIP
5962-8866206NA FAQ
1.How can I place an order for 5962-8866206NA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962-8866206NA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962-8866206NA reliable?
The price and inventory of 5962-8866206NA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-8866206NA is usually 5 days.
3.What payment methods are accepted for 5962-8866206NA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962-8866206NA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 5962-8866206NA?
5962-8866206NA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5962-8866206NA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962-8866206NA?
For technical support, including 5962-8866206NA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-8866206NA requirements.
6.How does Aetrix verify that 5962-8866206NA is sourced from the original manufacturer or authorized distributors?
All 5962-8866206NA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-8866206NA meets industry standards.
7.What is the process for return or replacement of 5962-8866206NA?
All 5962-8866206NA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-8866206NA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962-8866206NA part is unused and in its original packaging.
Return procedure for 5962-8866206NA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
5962-8866206NA Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

