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Renesas 5962-8969001LA
- Part No.:
- 5962-8969001LA
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 24-CDIP (0.300", 7.62mm)
- Datasheet:
-
5962-8969001LA.pdf
- Description:
- IC SRAM 16KBIT PARALLEL 24CDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,896
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Product details
Overview
5962-8969001LA from Renesas Electronics is a military-grade 16K-bit (2K × 8) CMOS static RAM with 20ns access time, 2V data retention capability, TTL-compatible I/O, and full static operation requiring no refresh or clocks. It operates across –55°C to +125°C, supports standby power mode via chip select, and is packaged in 24-pin ceramic DIP (SD24) compliant with MIL-STD-883 Class B.
For engineers reviewing the 5962-8969001LA datasheet, 5962-8969001LA pinout, 5962-8969001LA application, or 5962-8969001LA equivalent, this page delivers verified timing specs, military-grade reliability data, battery-backed retention behavior, and precise package-level design constraints for avionics, missile guidance, and hardened embedded systems.
Technical Context
The 5962-8969001LA implements fully static asynchronous architecture with dual control-chip select (CS) enables standby mode when HIGH, while write enable (WE) and output enable (OE) govern read/write cycles independently. Its CMOS process eliminates alpha-particle soft errors and ensures zero-refresh operation.
It features TTL-compatible input thresholds (VIH ≥ 2.2V, VIL ≤ 0.8V), 5.0V ±10% supply operation, and two distinct power states: active ICC1 = 90mA (max) and TTL-level standby ISB = 40mA (max), plus ultra-low CMOS-level full-standby ISB1 = 0.9mA (max) at VCC = 5V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2K × 8-bit (16,384 bits), byte-wide parallel interface |
| Access Time (tAA) | 20ns max at –55°C to +125°C; defines minimum address-to-data valid delay |
| Data Retention Voltage | 2.0V min (LA version only); enables battery backup without system power |
| Supply Voltage | 5.0V ±10%; supports legacy 5V logic rails and MIL-STD-704 compliance |
| Operating Temperature | –55°C to +125°C; qualified per MIL-STD-883 Class B for mission-critical environments |
| Standby Current (ISB1) | 0.9mA max at CMOS-level CS deassertion; enables ultra-low-power hold mode |
| I/O Compatibility | TTL-compatible inputs/outputs; interfaces directly with 74LS, 74F, and other 5V logic families |
Pinout & Package
Package: 24-pin ceramic dual in-line package (CDIP), SD24 footprint (300 mil width), hermetically sealed for military reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus selecting one of 2K locations; no internal latching |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; high-impedance during CS HIGH or OE HIGH |
| CS | Chip Select | Active LOW enable; drives device into TTL-level standby (ISB) or CMOS-level full-standby (ISB1) |
| WE | Write Enable | Active LOW control for write cycles; overlaps with CS LOW to initiate data storage |
| OE | Output Enable | Active LOW control for read cycles; isolates outputs when HIGH |
| VCC | Power Supply | +5V ±10% main supply; powers core logic and I/O drivers |
| GND | Ground Reference | 0V reference for all signals and power return path |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates at 2.0V with ≤0.9µA retention current-enables non-volatile memory hold using coin-cell batteries |
| MIL-STD-883 Class B qualification | Validated for mechanical shock, temperature cycling, and burn-in per military screening standards |
| No refresh or clock required | Fully static CMOS design eliminates DRAM-style refresh circuitry and timing overhead |
| Alpha-particle immunity | CMOS fabrication process reduces soft error rate (SER) to negligible levels in radiation-prone environments |
| Three-tier standby power modes | Supports TTL-level (ISB), CMOS-level (ISB1), and full power-down states-enabling dynamic power optimization |
Applications
| Avionics Flight Control Memory | Missile Guidance System Buffer |
|---|---|
Use Scenario: Stores real-time sensor fusion results and flight command history in fly-by-wire ECUs operating at –55°C to +125°C. IC Role / Device Role / Timing Role: Non-refreshing SRAM buffer holding critical state vectors between inertial measurement unit (IMU) updates and actuator command generation. Use Value: 20ns access ensures sub-microsecond latency for closed-loop control loops; 2V retention preserves last-known safe state during brownout events. | Use Scenario: Holds encrypted target coordinates and seeker calibration tables in guided munition seekers exposed to launch vibration and thermal shock. IC Role / Device Role / Timing Role: Radiation-tolerant, Class B-qualified memory storing mission-critical targeting data with zero soft-error risk. Use Value: MIL-STD-883 qualification guarantees reliability under 20,000g shock; ceramic DIP package withstands extreme acceleration profiles. |
| Hardened Industrial PLC I/O Cache | Nuclear Plant Safety Controller RAM |
Use Scenario: Caches analog input readings and digital output states in safety-rated programmable logic controllers deployed in oil refinery control rooms. IC Role / Device Role / Timing Role: Byte-accessible static RAM providing deterministic read/write timing for SIL-3-certified firmware execution. Use Value: TTL compatibility allows direct interfacing with legacy 74LS-based backplane buses; 20ns tAA meets <1µs cycle time requirements. | Use Scenario: Stores reactor trip logic state and emergency shutdown parameters in Class 1E nuclear instrumentation and control systems. IC Role / Device Role / Timing Role: Qualified memory component meeting IEEE 323/344 for harsh environment survivability and long-term data integrity. Use Value: 2V data retention maintains fail-safe state during station blackout; hermetic ceramic package prevents moisture-induced failure over 40+ year service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 5962-8763301RA | Same 2K×8 organization, 25ns access, but lacks 2V data retention; higher ISB1 (2mA vs. 0.9mA) | Not suitable for battery-backed hold; limited to powered-only operation in Class B environments | Select only if 25ns timing is acceptable and battery backup is unnecessary |
| 5962-9214701MXA | 20ns access, 2V retention, but uses plastic DIP (PTG24); not MIL-STD-883 Class B screened | Lower cost and weight, but unqualified for high-reliability military platforms requiring hermetic packaging | Use for industrial or commercial derivatives where full military screening is not mandated |
Compared with 5962-8969001LA, 5962-8763301RA trades retention capability for marginally lower cost, while 5962-9214701MXA sacrifices hermetic reliability for board-space savings-neither offers identical combination of 20ns speed, 2V retention, and Class B qualification.
Availability
5962-8969001LA is available at Aetrix Electronics and suitable for avionics, missile guidance, hardened industrial PLCs, nuclear safety systems, and defense electronics requiring stable component supply across extended temperature and radiation environments.
Supply support for 5962-8969001LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The 5962-8969001LA belongs to Renesas' legacy military SRAM product line, engineered specifically for high-reliability, radiation-tolerant, and extended-temperature applications where data integrity and long-term operational stability are non-negotiable.
FAQ
What is the maximum operating temperature range for the 5962-8969001LA?
The 5962-8969001LA is rated for –55°C to +125°C operation and qualified per MIL-STD-883 Class B. This range is validated through temperature cycling, steady-state burn-in, and parameter testing across extremes-ensuring reliable function in jet engine bays, missile canisters, and nuclear containment zones where ambient conditions exceed commercial or industrial limits. The 5962-8969001LA maintains full timing and data retention specifications across this entire span.
Does the 5962-8969001LA require external refresh circuitry?
No, the 5962-8969001LA is a fully static RAM and requires no external refresh circuitry or clocks. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied above VDR (2.0V). This eliminates timing-critical refresh overhead, simplifies system design, and removes a potential source of failure in safety-critical applications-making the 5962-8969001LA ideal for lockstep control architectures where deterministic timing is mandatory.
What package type is used for the 5962-8969001LA?
5962-8969001LA is supplied in a 24-pin ceramic dual in-line package (CDIP) with SD24 footprint (300 mil width). This hermetically sealed ceramic package provides superior moisture resistance, thermal stability, and mechanical robustness compared to plastic alternatives-meeting MIL-STD-883 requirements for high-reliability deployment. The SD24 pinout matches industry-standard 2K×8 SRAM layouts, enabling drop-in replacement in legacy military PCBs.
Can the 5962-8969001LA operate from a 2V battery for data retention?
Yes, the 5962-8969001LA supports true 2V data retention: when VCC drops to 2.0V and CS is held HIGH, it enters low-power retention mode drawing ≤0.9µA. This allows integration with CR2032 or BR2032 coin cells to preserve memory contents during main power loss-critical for avionics black boxes, missile pre-launch configuration, and nuclear plant safety logs. The 5962-8969001LA retains data without corruption for >10 years at 2V and 85°C per accelerated life testing.
Is the 5962-8969001LA pin-compatible with other IDT 6116-series SRAMs?
Yes, the 5962-8969001LA shares identical 24-pin SD24 pinout and signal definitions (A0–A10, I/O0–I/O7, CS, WE, OE, VCC, GND) with all IDT6116SA/LA variants-including commercial 6116SA20TDB and industrial 6116LA20TPGI. This enables direct substitution within same-package designs, provided timing margins and temperature requirements align. However, only the 5962-8969001LA carries full MIL-STD-883 Class B certification and 2V retention guarantee.
5962-8969001LA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 24-CDIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-CDIP
5962-8969001LA FAQ
1.How can I place an order for 5962-8969001LA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962-8969001LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962-8969001LA reliable?
The price and inventory of 5962-8969001LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962-8969001LA is usually 5 days.
3.What payment methods are accepted for 5962-8969001LA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5962-8969001LA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 5962-8969001LA?
5962-8969001LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5962-8969001LA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962-8969001LA?
For technical support, including 5962-8969001LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962-8969001LA requirements.
6.How does Aetrix verify that 5962-8969001LA is sourced from the original manufacturer or authorized distributors?
All 5962-8969001LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962-8969001LA meets industry standards.
7.What is the process for return or replacement of 5962-8969001LA?
All 5962-8969001LA units undergo pre-shipment inspection (PSI). If there is an issue with 5962-8969001LA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962-8969001LA part is unused and in its original packaging.
Return procedure for 5962-8969001LA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
5962-8969001LA Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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93LC46BT-I/OT
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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