Renesas 5962-9166203MYA

Overview

5962-9166203MYA from IDT is a high-speed 4K × 16 dual-port static RAM designed for real-time, concurrent memory access in military-grade embedded systems. It supports fully asynchronous operation from either port, features on-chip semaphore logic and port arbitration, delivers 20 ns max access time (military grade), and retains data at 2 V for battery backup operation.

For engineers reviewing the 5962-9166203MYA datasheet, 5962-9166203MYA pinout, 5962-9166203MYA application, or 5962-9166203MYA equivalent, key selection criteria include dual-port arbitration timing (tAPS = 5 ns), BUSY flag behavior under M/S = VIH, tBDD ≤ 30 ns for port-to-port read validity, and compatibility with MIL-PRF-38535 QML Class V ceramic packaging.

Technical Context

The 5962-9166203MYA implements true dual-ported SRAM cells enabling simultaneous reads of the same address across left and right ports. Its arbitration logic resolves contention via Master/Slave select (M/S) and generates BUSY flags to stall conflicting writes - critical for deterministic real-time interprocessor communication.

It integrates full hardware semaphore signaling using A0–A2 to address eight flags, with dedicated SEM, INT, and BUSY terminals. The device operates over –55°C to +125°C, supports TTL-compatible 5 V ±10% supply, and enters low-power standby (ISB3 ≤ 0.2 mA typ.) when both chip enables are deasserted with CMOS-level inputs.

Key Specifications

Pinout & Package

Ceramic 84-pin PGA (GU84 package), compliant with MIL-PRF-38535 QML Class V mechanical and environmental requirements. Pin layout supports independent left/right port control with duplicated I/O, address, and control signals plus dedicated arbitration and interrupt lines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-20AXC and AS7C34098B-20TIN, the 5962-9166203MYA uniquely delivers MIL-qualified reliability, integrated arbitration/BUSY signaling, and 2 V data retention - eliminating external components and enabling deterministic real-time behavior in safety-critical platforms.

Availability

5962-9166203MYA is available at Aetrix Electronics and suitable for avionics data buffering, secure interprocessor communication, radar signal processing, tactical radio co-processing, and missile guidance subsystems requiring stable component supply across extended temperature and radiation-hardened environments.

Supply support for 5962-9166203MYA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions, now part of Renesas Electronics.

The IDT7024 family was engineered for deterministic, contention-free memory sharing in dual-processor military and aerospace systems - prioritizing hardware arbitration, low-latency access, and extreme environmental resilience.

FAQ

What is the guaranteed maximum access time for 5962-9166203MYA across its full military temperature range?

The 5962-9166203MYA guarantees a maximum access time of 20 ns over the full –55°C to +125°C operating range, as specified in the AC Electrical Characteristics table for the 7024X20 speed grade under military conditions. This value is production-tested and applies to both left and right ports under worst-case voltage (5.5 V) and temperature conditions.

Does 5962-9166203MYA support true simultaneous read operations from both ports to the same memory location?

Yes, the 5962-9166203MYA implements true dual-ported SRAM cells that allow simultaneous reads from both left and right ports to the exact same memory address without contention or data corruption. This capability is inherent to the cell architecture and requires no arbitration or BUSY flag assertion during concurrent reads.

How does the M/S pin affect BUSY signal behavior in 5962-9166203MYA?

When M/S = H (Master), BUSYL and BUSYR function as outputs asserting active-low BUSY during port contention; when M/S = L (Slave), BUSYL and BUSYR become inputs accepting external BUSY signals. This configuration enables hierarchical arbitration in multi-device systems - the 5962-9166203MYA uses this to coordinate access without external logic.

What is the minimum supply voltage required to maintain data integrity in 5962-9166203MYA during battery backup mode?

The 5962-9166203MYA maintains data integrity down to 2.0 V (VDR = 2.0 V) in battery backup mode, as confirmed in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 4000 µA (typ. 100 µA), enabling years of retention on small lithium batteries - a feature exclusive to the 'L' variant embodied in this QML-qualified part.

Can 5962-9166203MYA be used in a single-port configuration, and how is that achieved?

Yes, the 5962-9166203MYA can operate as a single-port SRAM by tying one port's chip enable (e.g., CER) permanently high and using only the other port's address, data, and control signals. All internal resources remain functional, but arbitration, semaphore, and BUSY logic related to the disabled port are inactive - simplifying interface design while retaining full 4K × 16 capacity on the active port.