Infineon Technologies 5962F1120101QXA
- Part No.:
- 5962F1120101QXA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-BFCPGA
- Datasheet:
-
5962F1120101QXA.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165CCGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,042
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Product details
Overview
5962F1120101QXA from Cypress Semiconductor is a radiation-hardened 72-Mbit QDR® II+ SRAM with RadStop™ technology, configured as 4 M × 18, operating at 250 MHz with DDR interfaces on independent read/write ports, 1.8-V core supply, and qualified for space-grade applications requiring latch-up immunity ≥120 MeV·cm²/mg at 125 °C.
For engineers reviewing the 5962F1120101QXA datasheet, 5962F1120101QXA pinout, 5962F1120101QXA application, or 5962F1120101QXA equivalent, this device supports high-bandwidth concurrent memory access in radiation-intensive environments such as satellite command/data handling, onboard avionics processors, and high-reliability military flight control systems.
Technical Context
The 5962F1120101QXA implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual-edge clocking (K and K#) - addresses latched on rising edge for reads and falling edge for writes - enabling true concurrent R/W operations at 500 MT/s effective data rate.
RadStop™ technology provides verified single-event latch-up (SEL) immunity up to 120 MeV·cm²/mg and total ionizing dose tolerance of 300 krad(Si), validated per MIL-PRF-38535 Class V screening. The device integrates a delay-locked loop (DLL) for precise 2-cycle read latency and JTAG 1149.1 boundary-scan for testability in hermetic CCGA packaging.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4 M × 18 organization) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s DDR throughput per port |
| Read Latency | 2 cycles with DLL enabled - deterministic timing for real-time control loops |
| Total Ionizing Dose | 300 krad(Si) - qualified for long-duration space missions |
| SEL Immunity | ≥120 MeV·cm²/mg at 125 °C - meets MIL-STD-883 TM1019.8 requirements |
| Package | 165-ball Ceramic Column Grid Array (CCGA), 21 × 25 × 2.83 mm - hermetic, high-reliability mounting |
| I/O Interface | HSTL Class I inputs / variable-drive HSTL outputs - compatible with FPGA/ASIC memory controllers |
Pinout & Package
5962F1120101QXA is housed in a 165-ball Ceramic Column Grid Array (CCGA) package, designed for high-reliability, hermetic sealing and thermal stability across –55 °C to +125 °C operation. Pin assignments follow the CYRS1542AV18 footprint and are fully documented in Cypress document 001-60006 Rev. *M.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edge of K/K#; supports byte-write via BWS0/BWS1 |
| Q[17:0] | Synchronous read data output | Driven on rising edge of K/K#; tristated when RPS inactive |
| RPS / WPS | Active-low port select | Enables independent read/write arbitration without bus contention |
| K / K# | Differential clock inputs | Read address latched on K↑, write address on K#↑ - eliminates skew-sensitive timing margins |
| CQ / CQ# | Echo clocks | Source-synchronous output timing aids FPGA capture at 500 MT/s |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ# - enables reliable DDR data sampling |
| DOFF | Dynamic output offset control | Adjusts output drive strength to match PCB trace impedance |
| ZQ | Impedance calibration reference | Connects to 240 Ω ±1% external resistor for HSTL output calibration |
Key Features
| Feature | Design Value |
|---|---|
| RadStop™ radiation hardening | Process- and layout-level hardening delivers SEL immunity ≥120 MeV·cm²/mg and 300 krad TID tolerance |
| Two-word burst architecture | Every access transfers two consecutive 18-bit words - doubles effective bandwidth vs. single-word devices |
| Independent DDR read/write ports | Eliminates bus turnaround overhead; enables full-duplex memory traffic in real-time DSP pipelines |
| JTAG 1149.1 boundary scan | Fully compliant TAP controller with instruction register, bypass, IDCODE, and boundary-scan register support |
| Programmable output drive | HSTL outputs support dynamic impedance tuning via DOFF and ZQ pins - reduces signal integrity risk on long traces |
Applications
| Onboard Satellite Data Handling | Avionics Flight Control Processor Cache |
|---|---|
|
Use Scenario: Storing telemetry packets and command buffers in LEO satellite payloads where memory must survive cumulative radiation exposure over multi-year missions. IC Role / Device Role / Timing Role: High-bandwidth, radiation-tolerant SRAM buffer between FPGA-based packet assembler and downlink transmitter. Use Value: 300 krad TID rating and SEL immunity ensure uninterrupted operation without periodic reboots or EDAC dependency. |
Use Scenario: Real-time caching of sensor fusion data and actuator command queues in fly-by-wire flight control computers. IC Role / Device Role / Timing Role: Low-latency, concurrent-access memory supporting deterministic 2-cycle read latency for closed-loop control timing. Use Value: Independent DDR read/write ports enable simultaneous sensor read and actuator write without arbitration delay. |
| Spacecraft Command & Telemetry Unit | Military Radar Signal Processing |
|
Use Scenario: Buffering command sequences and health-monitoring logs in radiation-hardened command modules operating in GEO orbit. IC Role / Device Role / Timing Role: Radiation-qualified SRAM used for non-volatile command staging and status logging with JTAG verifiability. Use Value: JTAG 1149.1 compliance enables in-system verification and fault isolation without physical probe access. |
Use Scenario: Frame buffering in airborne AESA radar front-end processors exposed to neutron flux during high-altitude flight. IC Role / Device Role / Timing Role: High-throughput memory interfacing with Xilinx Ultrascale+ RFSoC for real-time pulse-Doppler processing. Use Value: Neutron SER <368 FIT/Mb ensures ≤1 bit error per 10⁶ hours under terrestrial neutron flux conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar radiation-tolerant QDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CYRS1542AV18 | Commercial-grade version; identical pinout, timing, and architecture but unqualified to MIL-PRF-38535 Class V | Lacks radiation screening, burn-in, and lot traceability - suitable only for ground-test or prototyping | Select only for lab validation; not for flight hardware |
| IS61WV102418BLL-10BLI | Non-radiation-hardened 18-Mbit QDR II SRAM; 10 ns access, no RadStop, no SEL immunity | Lower density, no TID/SEL qualification; limited to benign environments | Use only in non-space, non-mission-critical systems where cost outweighs reliability |
Compared with CYRS1542AV18 and IS61WV102418BLL-10BLI, 5962F1120101QXA uniquely delivers flight-certified radiation hardness, full MIL-PRF-38535 Class V screening, and guaranteed 300 krad TID performance - making it the sole option for production spaceflight memory subsystems.
Availability
5962F1120101QXA is available at Aetrix Electronics and suitable for satellite telemetry systems, avionics flight control units, and military radar signal processors requiring stable component supply with full traceability, extended lifecycle support, and radiation qualification documentation.
Supply support for 5962F1120101QXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for aerospace, defense, and industrial markets, with deep expertise in radiation-hardened semiconductor processes.
The 5962F1120101QXA belongs to Cypress's RadStop™ QDR II+ SRAM product line, engineered specifically for space-qualified memory subsystems demanding concurrent bandwidth, deterministic latency, and guaranteed radiation survivability.
FAQ
What is the maximum operating temperature range for 5962F1120101QXA?
The 5962F1120101QXA is screened and qualified for operation from –55 °C to +125 °C per MIL-PRF-38535 Class V requirements. Electrical parameters are guaranteed across this full range, including DLL functionality and timing margins, with thermal resistance (θJA) of 18.5 °C/W measured in standard CCGA mounting conditions.
Does 5962F1120101QXA require an external SECDED controller for soft-error mitigation?
Yes - while the device achieves ≤1 × 10⁻¹⁰ upsets/bit-day under heavy-ion irradiation *with* an external SECDED EDAC controller, it does not include on-die error correction. The QDR II+ architecture provides full data coherency but relies on system-level ECC implementation for functional safety compliance in mission-critical applications.
Can 5962F1120101QXA be used with standard commercial FPGAs?
Yes - its HSTL Class I inputs and variable-drive HSTL outputs are compatible with Xilinx Virtex-7, Kintex-Ultrascale+, and Intel Stratix V/VII FPGA memory interfaces. Layout requires controlled-impedance routing matched to 50 Ω differential pairs for K/K# and CQ/CQ#, and proper ZQ termination to 240 Ω.
Is JTAG boundary scan supported in all operating modes?
Yes - the IEEE 1149.1 TAP controller remains fully functional across all voltage and temperature conditions, including during power-up sequencing and standby. Test access is retained even when RPS/WPS are inactive, enabling in-system verification without interrupting memory operation.
5962F1120101QXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-BFCPGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 165-CCGA (21x25)
5962F1120101QXA FAQ
1.How can I place an order for 5962F1120101QXA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962F1120101QXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962F1120101QXA reliable?
The price and inventory of 5962F1120101QXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962F1120101QXA is usually 5 days.
3.What payment methods are accepted for 5962F1120101QXA?
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5962F1120101QXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5962F1120101QXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962F1120101QXA?
For technical support, including 5962F1120101QXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962F1120101QXA requirements.
6.How does Aetrix verify that 5962F1120101QXA is sourced from the original manufacturer or authorized distributors?
All 5962F1120101QXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962F1120101QXA meets industry standards.
7.What is the process for return or replacement of 5962F1120101QXA?
All 5962F1120101QXA units undergo pre-shipment inspection (PSI). If there is an issue with 5962F1120101QXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962F1120101QXA part is unused and in its original packaging.
Return procedure for 5962F1120101QXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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