Infineon Technologies 5962F1120102QXA
- Part No.:
- 5962F1120102QXA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-BFCPGA
- Datasheet:
-
5962F1120102QXA.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165CCGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,377
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Product details
Overview
5962F1120102QXA from Cypress Semiconductor is a radiation-hardened 72-Mbit QDR® II+ SRAM with RadStop™ technology, configured as 4 M × 18, operating at 250 MHz with DDR interfaces on independent read/write ports, 1.8 V core supply, and 165-ball CCGA package - deployed in spaceborne command/data handling systems requiring latch-up immunity ≥120 MeV·cm²/mg and total ionizing dose tolerance of 300 krad(Si).
For engineers reviewing the 5962F1120102QXA datasheet, 5962F1120102QXA pinout, 5962F1120102QXA application, or 5962F1120102QXA equivalent, this device delivers deterministic four-word burst timing, echo-clock–synchronized data capture, JTAG 1149.1 test access, and DLL-enabled 2-cycle read latency - critical for high-reliability avionics memory subsystems.
Technical Context
The 5962F1120102QXA implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses dual input clocks (K/K̄) for precise DDR timing, with all inputs registered on K rising edges and outputs registered on K/K̄ rising edges.
Its RadStop™ hardening includes process-level neutron/SEL mitigation and screening per MIL-PRF-38535 Class V, enabling operation at 125 °C under 2.0 × 10⁹ rad(Si)/sec dose rate and survivability up to 1.5 × 10¹¹ rad(Si)/sec. The device supports byte-write select (BWS0/BWS1), QVLD-valid data indication, and DOFF output disable control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4 M × 18 organization) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s effective data rate per port |
| Read Latency | 2 clock cycles with DLL enabled - ensures deterministic timing for real-time processing |
| Total Ionizing Dose | 300 krad(Si) - qualified for long-duration space missions |
| Latch-up Immunity | ≥120 MeV·cm²/mg at 125 °C - meets MIL-STD-883 TM 1019.8 |
| Core Supply Voltage | 1.8 V ± 0.1 V - compatible with low-voltage spacecraft power domains |
| Package | 165-ball Ceramic Column Grid Array (CCGA), 21 × 25 × 2.83 mm - hermetic, high-reliability mounting |
Pinout & Package
5962F1120102QXA is housed in a 165-ball CCGA package with 21 × 25 ball array and 1.27 mm pitch. Pin functions are defined per MIL-PRF-38535 screening and validated against Cypress Document 001-60007 Rev. *L.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on K rising edge; supports concurrent writes with RPS/WPS control |
| Q[17:0] | Synchronous read data output | 18-bit parallel output driven on K/K̄ rising edges; tristated when RPS deasserted |
| RPS, WPS | Port select controls | Active-low synchronous enables - decouple read/write arbitration without external logic |
| BWS0, BWS1 | Byte write select | Independent 9-bit byte masking - preserves unselected bits during partial writes |
| CQ, CQ̄ | Echo clocks | Output-synchronized copies of K/K̄ - simplify PCB trace length matching for DDR capture |
| QVLD | Valid data indicator | Asserted one cycle before first valid Q[17:0] word - enables reliable data strobing in FPGA receivers |
| DOFF | Output disable | Global tri-state control for Q[17:0] - supports hot-swap and shared-bus isolation |
Key Features
| Feature | Design Value |
|---|---|
| RadStop™ radiation hardening | Process-and-circuit-level hardening achieving SEL immunity ≥120 MeV·cm²/mg and 300 krad TID tolerance |
| Four-word burst architecture | Reduces address bus toggling frequency by 4× versus single-word access - lowers EMI and routing complexity |
| Separate read/write DDR ports | Enables true concurrent R/W operations without arbitration delay - sustains full 500 MT/s bandwidth per port |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system diagnostics per MIL-STD-1553B-compatible toolchains |
| DLL-enabled timing alignment | Compensates for internal skew to guarantee setup/hold margins at 250 MHz - eliminates external delay tuning |
Applications
| Onboard Command & Data Handling (C&DH) | Satellite Telemetry Buffering |
|---|---|
Use Scenario: Storing and retrieving spacecraft housekeeping telemetry packets with deterministic latency and zero corruption under proton irradiation. IC Role / Device Role / Timing Role: High-speed, radiation-tolerant buffer between flight computer and downlink transmitter - operates as dual-port FIFO with burst-aligned reads. Use Value: Eliminates bus turnaround delays and guarantees 2-cycle read latency via DLL, enabling real-time packet assembly at 500 MT/s. | Use Scenario: Temporarily buffering high-rate science instrument data prior to scheduled downlink transmission windows. IC Role / Device Role / Timing Role: Burst-mode write buffer accepting 4-word bursts from imaging sensors, then streaming out via synchronized read port to RF modulator. Use Value: Four-word burst reduces sensor interface clock rate by 4× while maintaining full throughput - simplifies timing closure in mixed-signal payloads. |
| Spacecraft Attitude Control Memory | Radiation-Hardened FPGA Configuration Cache |
Use Scenario: Holding real-time gyroscope and star tracker fusion results for closed-loop attitude determination algorithms. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by dual-core processor - read port feeds control loop, write port receives new measurements. Use Value: Independent R/W ports enable uninterrupted control loop execution while ingesting new sensor data - no arbitration stalls. | Use Scenario: Storing reconfigurable bitstreams for radiation-induced SEU recovery in Xilinx Virtex-5QV FPGAs. IC Role / Device Role / Timing Role: Secure, high-integrity storage for golden configuration images - accessed only during cold-start or scrubbing events. Use Value: RadStop™ hardening prevents bit corruption in stored bitstreams, ensuring guaranteed FPGA functional recovery after single-event upsets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar radiation-hardened QDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 5962R1120101VXA | Same 4 M × 18 QDR II+ architecture but rated to 200 MHz max clock; lacks DLL and QVLD signal | Lower bandwidth (400 MT/s), no echo-clock synchronization - requires external timing compensation | Select when system clock <200 MHz and DLL/QVLD not required to reduce cost and qualification scope |
| 5962F1220101QXA | QDR II+ 2 M × 36 (72-Mbit) variant with identical radiation specs but wider data bus and different BWS mapping (BWS0–BWS3) | Optimized for 36-bit bus architectures (e.g., PowerPC-based processors); incompatible pinout and address width | Select for systems with native 36-bit data paths where byte-write granularity across four 9-bit lanes is needed |
Compared with 5962F1120102QXA, the 5962R1120101VXA trades speed and timing precision for lower cost and simpler qualification, while the 5962F1220101QXA shifts data-width priority - making the 5962F1120102QXA optimal for 18-bit, 250 MHz, DLL-dependent avionics designs.
Availability
5962F1120102QXA is available at Aetrix Electronics and suitable for onboard command & data handling, satellite telemetry buffering, spacecraft attitude control memory, and radiation-hardened FPGA configuration cache applications requiring stable component supply across extended mission lifetimes.
Supply support for 5962F1120102QXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-reliability memory, microcontrollers, and programmable analog/digital ICs for aerospace, defense, and industrial markets.
This device belongs to Cypress's RadHard QDR SRAM product line, engineered specifically for space-qualified systems demanding guaranteed operation under extreme radiation, temperature, and vacuum conditions - with design focus on deterministic timing, latch-up immunity, and TID resilience.
FAQ
What is the maximum allowable dose rate for continuous operation of 5962F1120102QXA?
The device is qualified for continuous operation at dose rates up to 2.0 × 10⁹ rad(Si)/sec and demonstrates survivability at transient levels up to 1.5 × 10¹¹ rad(Si)/sec. These values are verified per MIL-STD-883 TM 1019.8 and documented in Cypress Application Note AN54908. Operation beyond 2.0 × 10⁹ rad(Si)/sec requires derating analysis and is not covered by standard qualification.
Does 5962F1120102QXA support asynchronous reset or power-on initialization sequences?
No - the device relies entirely on synchronous control signals (RPS/WPS, K/K̄) and has no dedicated asynchronous reset pin. Power-up sequencing must follow the strict order specified in Document 001-60007: VDD must stabilize before VDDQ, and clocks must be held inactive until both supplies settle within tolerance. DLL calibration occurs automatically after clock enable.
Can BWS0 and BWS1 be used simultaneously to perform a 16-bit partial write in CYRS1543AV18 configuration?
Yes - BWS0 controls D[8:0] (9 bits) and BWS1 controls D[17:9] (9 bits), allowing independent masking of either or both byte groups. Asserting both BWS0 and BWS1 enables full 18-bit writes; asserting only one performs a 9-bit write to its respective group, leaving the other 9 bits unchanged per the self-timed write architecture.
Is JTAG boundary scan supported during powered operation or only in test mode?
JTAG 1149.1 boundary scan is fully operational during normal powered operation - TCK, TMS, TDI, and TDO remain functional regardless of RPS/WPS state. Scan operations do not interfere with memory access, and the TAP controller runs independently of the memory core, enabling in-system diagnostics without halting mission-critical data flow.
5962F1120102QXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-BFCPGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 165-CCGA (21x25)
5962F1120102QXA FAQ
1.How can I place an order for 5962F1120102QXA through Aetrix?
Please submit a Request for Quotation (RFQ) for 5962F1120102QXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5962F1120102QXA reliable?
The price and inventory of 5962F1120102QXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5962F1120102QXA is usually 5 days.
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5962F1120102QXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5962F1120102QXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5962F1120102QXA?
For technical support, including 5962F1120102QXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5962F1120102QXA requirements.
6.How does Aetrix verify that 5962F1120102QXA is sourced from the original manufacturer or authorized distributors?
All 5962F1120102QXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5962F1120102QXA meets industry standards.
7.What is the process for return or replacement of 5962F1120102QXA?
All 5962F1120102QXA units undergo pre-shipment inspection (PSI). If there is an issue with 5962F1120102QXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5962F1120102QXA part is unused and in its original packaging.
Return procedure for 5962F1120102QXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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